Theoretical tools for the description of charge transport in disordered organic semiconductors von Nenashev, A V, Oelerich, J O, Baranovskii, S D

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Charge transport mechanism in lead oxide revealed by CELIV technique von Semeniuk, O., Juska, G., Oelerich, J.-O., Wiemer, M., Baranovskii, S. D., Reznik, A.

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Structural characteristics of gallium metal deposited on Si (001) by MOCVD von Werner, K., Beyer, A., Oelerich, J.O., Baranovskii, S.D., Stolz, W., Volz, K.

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Advanced percolation solution for hopping conductivity von Nenashev, A. V., Jansson, F., Oelerich, J. O., Huemmer, D., Dvurechenskii, A. V., Gebhard, F., Baranovskii, S. D.

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How to find out the density of states in disordered organic semiconductors von Oelerich, J O, Huemmer, D, Baranovskii, S D

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Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors von Nenashev, A. V., Oelerich, J. O., Dvurechenskii, A. V., Gebhard, F., Baranovskii, S. D.

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Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM von Duschek, L., Kükelhan, P., Beyer, A., Firoozabadi, S., Oelerich, J.O., Fuchs, C., Stolz, W., Ballabio, A., Isella, G., Volz, K.

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Transport of electrons in lead oxide studied by CELIV technique von Semeniuk, O, Juska, G, Oelerich, J O, Jandieri, K, Baranovskii, S D, Reznik, A

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Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors von Baranovskii, S. D., Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V., Gebhard, F.

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Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM von Kükelhan, P., Firoozabadi, S., Beyer, A., Duschek, L., Fuchs, C., Oelerich, J.O., Stolz, W., Volz, K.

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Energy position of the transport path in disordered organic semiconductors von Oelerich, J O, Jansson, F, Nenashev, A V, Gebhard, F, Baranovskii, S D

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Theory to carrier recombination in organic disordered semiconductors von Hofacker, A., Oelerich, J. O., Nenashev, A. V., Gebhard, F., Baranovskii, S. D.

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Field dependence of hopping mobility: Lattice models against spatial disorder von Oelerich, J. O., Nenashev, A. V., Dvurechenskii, A. V., Gebhard, F., Baranovskii, S. D.

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Release of carriers from traps enhanced by hopping von Nenashev, A. V., Valkovskii, V. V., Oelerich, J. O., Dvurechenskii, A. V., Semeniuk, O., Reznik, A., Gebhard, F., Baranovskii, S. D.

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Field-enhanced mobility in the multiple-trapping regime von Nenashev, A. V., Oelerich, J. O., Jandieri, K., Valkovskii, V. V., Semeniuk, O., Dvurechenskii, A. V., Gebhard, F., Juška, G., Reznik, A., Baranovskii, S. D.

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Concentration dependence of the transport energy level for charge carriers in organic semiconductors von Oelerich, J. O., Huemmer, D., Weseloh, M., Baranovskii, S. D.

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Percolation description of charge transport in amorphous oxide semiconductors von Nenashev, A. V., Oelerich, J. O., Greiner, S. H. M., Dvurechenskii, A. V., Gebhard, F., Baranovskii, S. D.

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Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors von Baranovskii, S D, Nenashev, A V, Oelerich, J O, Greiner, S H M, Dvurechenskii, A V, Gebhard, F

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Percolation description of charge transport in amorphous oxide semiconductors von Nenashev, A V, Oelerich, J O, Greiner, S H M, Dvurechenskii, A V, Gebhard, F, Baranovskii, S D

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Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors von Nenashev, A V, Oelerich, J O, Dvurechenskii, A V, Gebhard, F, Baranovskii, S D

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