Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates von Li, Xiangdong, Geens, Karen, Wellekens, Dirk, Zhao, Ming, Magnani, Alessandro, Amirifar, Nooshin, Bakeroot, Benoit, You, Shuzhen, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Odnoblyudov, Vlad, Aktas, Ozgur, Basceri, Cem, Marcon, Denis, Groeseneken, Guido, Decoutere, Stefaan

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Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates von Tadjer, Marko J., Waltereit, Patrick, Kirste, Lutz, Müller, Stefan, Lundh, James Spencer, Jacobs, Alan G., Koehler, Andrew D., Komarov, Pavel, Raad, Peter, Gaskins, John, Hopkins, Patrick, Odnoblyudov, Vlad, Basceri, Cem, Anderson, Travis J., Hobart, Karl D.

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Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates von Li, Xiangdong, Geens, Karen, Wellekens, Dirk, Zhao, Ming, Magnani, Alessandro, Amirifar, Nooshin, Bakeroot, Benoit, You, Shuzhen, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Odnoblyudov, Vlad, Aktas, Ozgur, Basceri, Cem, Marcon, Denis, Groeseneken, Guido, Decoutere, Stefaan

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