Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates von Li, Xiangdong, Geens, Karen, Wellekens, Dirk, Zhao, Ming, Magnani, Alessandro, Amirifar, Nooshin, Bakeroot, Benoit, You, Shuzhen, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Odnoblyudov, Vlad, Aktas, Ozgur, Basceri, Cem, Marcon, Denis, Groeseneken, Guido, Decoutere, Stefaan

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Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates von Tadjer, Marko J., Waltereit, Patrick, Kirste, Lutz, Müller, Stefan, Lundh, James Spencer, Jacobs, Alan G., Koehler, Andrew D., Komarov, Pavel, Raad, Peter, Gaskins, John, Hopkins, Patrick, Odnoblyudov, Vlad, Basceri, Cem, Anderson, Travis J., Hobart, Karl D.

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Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates von Li, Xiangdong, Geens, Karen, Wellekens, Dirk, Zhao, Ming, Magnani, Alessandro, Amirifar, Nooshin, Bakeroot, Benoit, You, Shuzhen, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Odnoblyudov, Vlad, Aktas, Ozgur, Basceri, Cem, Marcon, Denis, Groeseneken, Guido, Decoutere, Stefaan

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METHOD AND SYSTEM FOR VERTICAL FETS FABRICATED ON AN ENGINEERED SUBSTRATE von BASCERI, Cem, ODNOBLYUDOV, Vlad

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Challenges and Future Trends von Le Fèvre, Patrick, Haynes, Geoff, Leong, Kennith Kin, Odnoblyudov, Vladimir, Basceri, Cem, Then, Han Wui

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