Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction von Cubukcu, Murat, Boulle, Olivier, Drouard, Marc, Garello, Kevin, Onur Avci, Can, Mihai Miron, Ioan, Langer, Juergen, Ocker, Berthold, Gambardella, Pietro, Gaudin, Gilles

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Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance von Wang, Mengxing, Cai, Wenlong, Cao, Kaihua, Zhou, Jiaqi, Wrona, Jerzy, Peng, Shouzhong, Yang, Huaiwen, Wei, Jiaqi, Kang, Wang, Zhang, Youguang, Langer, Jürgen, Ocker, Berthold, Fert, Albert, Zhao, Weisheng

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Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO|CoFeB|Ta magnetic tunnel junctions von Alzate, Juan G., Khalili Amiri, Pedram, Yu, Guoqiang, Upadhyaya, Pramey, Katine, Jordan A., Langer, Juergen, Ocker, Berthold, Krivorotov, Ilya N., Wang, Kang L.

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Giant spin-torque diode sensitivity in the absence of bias magnetic field von Fang, Bin, Carpentieri, Mario, Hao, Xiaojie, Jiang, Hongwen, Katine, Jordan A., Krivorotov, Ilya N., Ocker, Berthold, Langer, Juergen, Wang, Kang L., Zhang, Baoshun, Azzerboni, Bruno, Amiri, Pedram Khalili, Finocchio, Giovanni, Zeng, Zhongming

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Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy von Lin, Weiwei, Vernier, Nicolas, Agnus, Guillaume, Garcia, Karin, Ocker, Berthold, Zhao, Weisheng, Fullerton, Eric E., Ravelosona, Dafiné

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Spin–orbit torque driven multi-level switching in He+ irradiated W–CoFeB–MgO Hall bars with perpendicular anisotropy von Zhao, Xiaoxuan, Liu, Yang, Zhu, Daoqian, Sall, Mamour, Zhang, Xueying, Ma, Helin, Langer, Jürgen, Ocker, Berthold, Jaiswal, Samridh, Jakob, Gerhard, Kläui, Mathias, Zhao, Weisheng, Ravelosona, Dafiné

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Enhancing domain wall velocity through interface intermixing in W-CoFeB-MgO films with perpendicular anisotropy von Zhao, Xiaoxuan, Zhang, Boyu, Vernier, Nicolas, Zhang, Xueying, Sall, Mamour, Xing, Tao, Diez, Liza Herrera, Hepburn, Carolyna, Wang, Lin, Durin, Gianfranco, Casiraghi, Arianna, Belmeguenai, Mohamed, Roussigné, Yves, Stashkevich, Andrei, Chérif, Salim Mourad, Langer, Jürgen, Ocker, Berthold, Jaiswal, Samridh, Jakob, Gerhard, Kläui, Mathias, Zhao, Weisheng, Ravelosona, Dafiné

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Assessment of conduction mechanisms through MgO ultrathin barriers in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junctions von Lv, Hua, Fidalgo, Joao, Silva, Ana V., Leitao, Diana C., Kampfe, Thomas, Riedel, Stefan, Langer, Juergen, Wrona, Jerzy, Ocker, Berthold, Freitas, Paulo P., Cardoso, Susana

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Effective field analysis using the full angular spin-orbit torque magnetometry dependence von Schulz, Tomek, Lee, Kyujoon, Krüger, Benjamin, Lo Conte, Roberto, Karnad, Gurucharan V., Garcia, Karin, Vila, Laurent, Ocker, Berthold, Ravelosona, Dafiné, Kläui, Mathias

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Ultra-Fast and High-Reliability SOT-MRAM: From Cache Replacement to Normally-Off Computing von Prenat, Guillaume, Garello, Kevin, Langer, Juergen, Ocker, Berthold, Cyrille, Marie-Claire, Gambardella, Pietro, Tahoori, Mehdi, Gaudin, Gilles, Jabeur, Kotb, Vanhauwaert, Pierre, Pendina, Gregory Di, Oboril, Fabian, Bishnoi, Rajendra, Ebrahimi, Mojtaba, Lamard, Nathalie, Boulle, Olivier

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Spin-orbit torques for current parallel and perpendicular to a domain wall von Schulz, Tomek, Alejos, Oscar, Martinez, Eduardo, Hals, Kjetil M. D., Garcia, Karin, Vila, Laurent, Lee, Kyujoon, Lo Conte, Roberto, Karnad, Gurucharan V., Moretti, Simone, Ocker, Berthold, Ravelosona, Dafiné, Brataas, Arne, Kläui, Mathias

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Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory von Grezes, Cecile, Lee, Hochul, Lee, Albert, Wang, Shaodi, Ebrahimi, Farbod, Li, Xiang, Wong, Kin, Katine, Jordan A., Ocker, Berthold, Langer, Jurgen, Gupta, Puneet, Khalili Amiri, Pedram, Wang, Kang L.

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Evolution of the interfacial magnetic anisotropy in MgO/CoFeB/Ta/Ru based multilayers as a function of annealing temperature von Aleksandrov, Yuriy, Fowley, Ciarán, Kowalska, Ewa, Sluka, Volker, Yıldırım, Oğuz, Lindner, Jürgen, Ocker, Berthold, Fassbender, Jürgen, Deac, Alina M.

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Ultra-Fast Perpendicular Spin-Orbit Torque MRAM von Cubukcu, Murat, Boulle, Olivier, Mikuszeit, Nikolai, Hamelin, Claire, Bracher, Thomas, Lamard, Nathalie, Cyrille, Marie-Claire, Buda-Prejbeanu, Liliana, Garello, Kevin, Miron, Ioan Mihai, Klein, O., de Loubens, G., Naletov, V. V., Langer, Juergen, Ocker, Berthold, Gambardella, Pietro, Gaudin, Gilles

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Seebeck effect and Joule heating in CoFeB/MgO/CoFeB-based perpendicular magnetic tunnel junctions with low resistance area product von Lv, Hua, Fidalgo, Joao, Kampfe, Thomas, Langer, Juergen, Wrona, Jerzy, Ocker, Berthold, Freitas, Paulo P, Cardoso, Susana

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Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling von Khalili Amiri, Pedram, Alzate, Juan G., Cai, Xue Qing, Ebrahimi, Farbod, Hu, Qi, Wong, Kin, Grezes, Cecile, Lee, Hochul, Yu, Guoqiang, Li, Xiang, Akyol, Mustafa, Shao, Qiming, Katine, Jordan A., Langer, Jurgen, Ocker, Berthold, Wang, Kang L.

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Angular Harmonic Hall Voltage and Magnetoresistance Measurements of Pt/FeCoB and Pt-Ti/FeCoB Bilayers for Spin Hall Conductivity Determination von Skowronski, Witold, Grochot, Krzysztof, Rzeszut, Piotr, Lazarski, Stanislaw, Gajoch, Grzegorz, Worek, Cezary, Kanak, Jaroslaw, Stobiecki, Tomasz, Langer, Jurgen, Ocker, Berthold, Vafaee, Mehran

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Spin Hall Magnetoresistance and Spin-Orbit Torque Efficiency in Pt/FeCoB Bilayers von Magni, Alessandro, Basso, Vittorio, Sola, Alessandro, Soares, Gabriel, Meggiato, Nicola, Kuepferling, Michaela, Skowronski, Witold, Lazarski, Stanislaw, Grochot, Krzysztof, Khanjani, Mehran Vafaee, Langer, Juergen, Ocker, Berthold

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Extraordinary hall effect in Pt- or Ni-based multilayer stacks with strong perpendicular magnetic anisotropy von Jan, Heinen, Tomek, Schulz, Gerhard, Jakob, Mathias, Kläui, Olivier, Boulle, Gregory, Malinowski, Henk, Swagten, Bert, Koopmans, Christian, Ulysse, Giancarlo, Faini, Berthold, Ocker, Jerzy, Wrona, Sung-Min, Ahn, Ngoc-Minh, Nguyen, Dafiné, Ravelosona

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The annealing effect on memory state stability and interlayer coupling in perpendicular magnetic tunnel junctions with ultrathin MgO barrier von Lv, Hua, Fidalgo, João, Leitão, Diana C., Silva, Ana V., Kämpfe, Thomas, Riedel, Stefan, Langer, Juergen, Wrona, Jerzy, Ocker, Berthold, Freitas, Paulo P., Cardoso, Susana

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