Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices von Rathi, Servin, Lee, Inyeal, Lim, Dongsuk, Wang, Jianwei, Ochiai, Yuichi, Aoki, Nobuyuki, Watanabe, Kenji, Taniguchi, Takashi, Lee, Gwan-Hyoung, Yu, Young-Jun, Kim, Philip, Kim, Gil-Ho

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Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors von Matsunaga, Masahiro, Higuchi, Ayaka, He, Guanchen, Yamada, Tetsushi, Krüger, Peter, Ochiai, Yuichi, Gong, Yongji, Vajtai, Robert, Ajayan, Pulickel M, Bird, Jonathan P, Aoki, Nobuyuki

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Terahertz bolometric detection by thermal noise in graphene field effect transistor von Mahjoub, Akram M., Suzuki, Shinichi, Ouchi, Takahiro, Aoki, Nobuyuki, Miyamoto, Katsuhiko, Yamaguchi, Tomohiro, Omatsu, Takashige, Ishibashi, Koji, Ochiai, Yuichi

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Imaging coherent transport in chemical vapor deposition graphene wide constriction by scanning gate microscopy von Chuang, Chiashain, Matsunaga, Masahiro, Liu, Fan-Hung, Woo, Tak-Pong, Lin, Li-Hung, Oto, Kenichi, Ochiai, Yuichi, Liang, Chi-Te, Aoki, Nobuyuki

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The electronic properties of amorphous and crystallized In2O3 films von Nakazawa, Hiromi, Ito, Yuko, Matsumoto, Eiji, Adachi, Kenji, Aoki, Nobuyuki, Ochiai, Yuichi

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Effects of Gas Adsorption on the Electrical Conductivity of Single-Wall Carbon Nanohorns von Urita, Koki, Seki, Shinya, Utsumi, Shigenori, Noguchi, Daisuke, Kanoh, Hirofumi, Tanaka, Hideki, Hattori, Yoshiyuki, Ochiai, Yuichi, Aoki, Nobuyuki, Yudasaka, Masako, Iijima, Sumio, Kaneko, Katsumi

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Mesoscopic conductance fluctuations in multi-layer graphene von Chuang, Chiashain, Lin, Li-Hung, Aoki, Nobuyuki, Ouchi, Takahiro, Mahjoub, Akram M., Woo, Tak-Pong, Puddy, Reuben K., Ochiai, Yuichi, Smith, C. G., Liang, Chi-Te

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Preparation and Characterization of Conducting Mixed-Valence 9,9′-Dimethyl-3,3′-bicarbazyl Rectangular Nanowires von Tokuda, Takuya, Murashiro, Katsuyuki, Kubo, Minako, Masu, Hyuma, Imanari, Mamoru, Seki, Hiroko, Aoki, Nobuyuki, Ochiai, Yuichi, Kanoh, Hirofumi, Hoshino, Katsuyoshi

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Scanning gate microscopy investigations on an InGaAs quantum point contact von Aoki, Nobuyuki, Da Cunha, Carlo R., Akis, Richard, Ferry, David K., Ochiai, Yuichi

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Weak localization and universal conductance fluctuations in multi-layer graphene von Chuang, Chiashain, Woo, Tak-Pong, Mahjoub, Akram M., Ouchi, Takahiro, Hsu, Chang-Shun, Chin, Chia-Pei, Aoki, Nobuyuki, Lin, Li-Hung, Ochiai, Yuichi, Liang, Chi-Te

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Electrosynthesis of conducting mixed-valence 9,9′-dimethyl-3,3′-bicarbazyl rectangular nanotubes von Hoshino, Katsuyoshi, Takizawa, Kazuki, Kubo, Minako, Murashiro, Katsuyuki, Aoki, Nobuyuki, Ochiai, Yuichi, Masu, Hyuma

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Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene von Chuang, Chiashain, Lin, Li-Hung, Aoki, Nobuyuki, Ouchi, Takahiro, Mahjoub, Akram M, Woo, Tak-Pong, Bird, Jonathan P, Ochiai, Yuichi, Lo, Shun-Tsung, Liang, Chi-Te

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High Current-Induced Electron Redistribution in a CVD-Grown Graphene Wide Constriction von Liang, Chi-Te, Ochiai, Yuichi, Matsunaga, Masahiro, Liu, Fan-Hung, Woo, Tak-Pong, Chuang, Chiashain, Aoki, Nobuyuki

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Difference of operation mechanisms in SWNTs network FETs studied via scanning gate microscopy von Wei, Xiaojun, Matsunaga Masahiro, Yahagi Tatsurou, Maeda Kenji, Bird, Jonathan P, Ishibashi Koji, Ochiai Yuichi, Aoki Nobuyuki

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Imaging of quantum interference patterns within a quantum point contact von da Cunha, Carlo R., Aoki, Nobuyuki, Morimoto, Takahiro, Ochiai, Yuichi, Akis, Richard, Ferry, David K.

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Scanning gate microscopy of copper phthalocyanine field effect transistors von Aoki, Nobuyuki, Sudou, Kouhei, Okamoto, Kazuya, Bird, Jonathan P., Ochiai, Yuichi

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Evaluating the performance of quantum point contacts as nanoscale terahertz sensors von Song, Jungwoo, Aizin, Gregory, Kawano, Yukio, Ishibashi, Koji, Aoki, Nobuyuki, Ochiai, Yuichi, Reno, John L, Bird, Jonathan P

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Passivation effects of alumina insulating layer on C60 thin-film field-effect transistors von Horiuchi, Kazunaga, Nakada, Kenji, Uchino, Shin, Hashii, Shinobu, Hashimoto, Akira, Aoki, Nobuyuki, Ochiai, Yuichi, Shimizu, Masaaki

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GR-FET application for high-frequency detection device von Mahjoub, Akram M, Nicol, Alec, Abe, Takuto, Ouchi, Takahiro, Iso, Yuhei, Kida, Michio, Aoki, Noboyuki, Miyamoto, Katsuhiko, Omatsu, Takashige, Bird, Jonathan P, Ferry, David K, Ishibashi, Koji, Ochiai, Yuichi

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Analysis of Operation Mechanism of Field Effect Transistor Composed of Network of High-Quality Single Wall Carbon Nanotubes by Scanning Gate Microscopy von Wei, Xiaojun, Aoki, Nobuyuki, Yahagi, Tatsurou, Maeda, Kenji, Bird, Jonathan P, Ishibashi, Koji, Ochiai, Yuichi

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