A Model for Multiparametric Analysis of the Parameters of Short-Channel HEMT-Type Transistors von Nedoshivina, A. D., Makartsev, I. V., Obolensky, S. V.

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Analysis of the Effect of Spacer Layers on Nonlinear Distortions of the Current–Voltage Characteristics of GaAlAs/InGaAs pHEMTs von Tarasova, E. A., Khazanova, S. V., Golikov, O. L., Puzanov, A. S., Obolensky, S. V., Zemlyakov, V. E.

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Silicon Metal–Oxide–Semiconductor Transistor with a Dependent Pocket Contact and Two-Layer Polysilicon Gate von Shobolova, T. A., Mokeev, A. S., Rudakov, S. D., Obolensky, S. V., Shobolov, E. L.

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Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm von Tarasova, E. A., Obolensky, S. V., Khazanova, S. V., Grigoryeva, N. N., Golikov, O. L., Ivanov, A. B., Puzanov, A. S.

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Simulation of the Electron Transport in a Mott Diode by the Monte Carlo Method von Obolensky, S. V., Murel, A. V., Vostokov, N. V., Shashkin, V. I.

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Cathodoluminescence of organo-lanthanide complexes von Kukinov, A. A., Balashova, T. V., Kaverin, B. S., Ilichev, V. A., Obolensky, S. V., Trufanov, A. N., Bochkarev, M. N.

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Radiation Hardness of Subterahertz Radiation Source Based on Heterodyne on Gunn Diode Generator and Superlattice Multiplier von Ivanov, A. S., Pavelyev, D. G., Obolensky, S. V., Obolenskaya, E. S.

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Analysis of Nonlinear Distortions of DpHEMT Structures Based on a GaAs/In0.53Ga0.47As Compound with Double-Sided Delta-Doping von Golikov, O. L., Kodochigov, N. E., Obolensky, S. V., Puzanov, A. S., Tarasova, E. A., Khazanova, S. V.

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Secondary-Ion Mass Spectroscopy for Analysis of the Implanted Hydrogen Profile in Silicon and Impurity Composition of Silicon-on-Insulator Structures von Abrosimova, N. D., Drozdov, M. N., Obolensky, S. V.

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Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation von Khananova, A. V., Obolensky, S. V.

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Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter von Golikov, O. L., Zabavichev, I. Yu, Ivanov, A. S., Obolensky, S. V., Obolenskaya, E. S., Paveliev, D. G., Potekhin, A. A., Puzanov, A. S., Tarasova, E. A., Khazanova, S. V.

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Modeling the Response of a Microwave Low-Barrier Uncooled Mott Diode to the Action of Heavy Ions of Outer Space and Femtosecond Laser Pulses von Puzanov, A. S., Bibikova, V. V., Zabavichev, I. Yu, Obolenskaya, E. S., Potekhin, A. A., Tarasova, E. A., Vostokov, N. V., Kozlov, V. A., Obolensky, S. V.

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Experimental Studies of Modification of the Characteristics of GaAs Structures with Schottky Contacts after Exposure to Fast Neutrons von Volkova, E. V., Loginov, A. B., Loginov, B. A., Tarasova, E. A., Puzanov, A. S., Korolev, S. A., Semyonovykh, E. S., Khazanova, S. V., Obolensky, S. V.

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Calculating Current–Voltage Characteristics with Negative Differential Conductivity Sections of Superlattices Based on a GaAs/AlAs Compound with Different Numbers of Periods von Khazanova, S. V., Golikov, O. L., Puzanov, A. S., Tarasova, E. A., Zabavichev, I. Yu, Potekhin, A. A., Obolenskaya, E. S., Ivanov, A. S., Paveliev, D. G., Obolensky, S. V.

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Comparison of the Efficiency of Promising Heterostructure Frequency-Multiplier Diodes of the THz-Frequency Range von Dyukov, D. I., Fefelov, A. G., Korotkov, A. V., Pavelyev, D. G., Kozlov, V. A., Obolenskaya, E. S., Ivanov, A. S., Obolensky, S. V.

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Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures von Kabalnov, Yu. A., Trufanov, A. N., Obolensky, S. V.

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Comparison of the Radiation Resistance of Prospective Bipolar and Heterobipolar Transistors von Shobolova, T. A., Korotkov, A. V., Petryakova, E. V., Lipatnikov, A. V., Puzanov, A. S., Obolensky, S. V., Kozlov, V. A.

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Effect of the Measuring Signal Parameters on the Error in Capacitance Measurements of a p-n Transition and Determining Its Resistance to Radiation von Zabavichev, I. Yu, Obolensky, S. V.

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Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation von Tarasova, E. A., Obolensky, S. V., Galkin, O. E., Hananova, A. V., Makarov, A. B.

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Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation von Venediktov, M. M., Tarasova, E. A., Bozhen’kina, A. D., Obolensky, S. V., Elesin, V. V., Chukov, G. V., Metelkin, I. O., Krevskiy, M. A., Dukov, D. I., Fefelov, A. G.

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