Tungsten incorporation in diamond thin films prepared by the hotfilament technique von Gheeraert, E., Deneuville, A., Brunel, M., Oberlin, J.C.

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The role of self diffusion in the dry development and plasma durability of polymers von Paniez, P.J., Joubert, O.P., Pons, M.J., Oberlin, J.C., Vachette, T.G., Weill, A.P., Pelletier, J.H., Fiori, C.

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Millitorr range PECVD of a-SiO2 films using TEOS and oxygen von Templier, F., Vallier, L., Madar, R., Oberlin, J.-C., Devine, R.A.B.

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Preparation of low resistivity tungsten thin films deposited by microwave-plasma-enhanced chemical vapour deposition from the tungsten hexafluoride-hydrogen system von Belkacem, A., Arnal, Y., Pelletier, J., André, E., Oberlin, J.C.

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Adhesion of LPCVD WSi x/W bilayers on oxide films von Lami, Ph, Normandon, Ph, Oberlin, J.C.

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Influence of epitaxy on the low temperature silicon diffusion through gold layers von Cros, A., Dallaporta, H., Oberlin, J.C.

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Monitoring of the thermal annealing of HDP-Si oxides by positron annihilation and thermal desorption spectrometry von Schut, H., van Veen, A., Jørgensen, L.V., Dankert, O., Westerduin, K.T., Reader, A.H., Oberlin, J.C.

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Adhesion of LPCVD WSix/W bilayers on oxide films von LAMI, P, NORMANDON, P, OBERLIN, J. C

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Tungsten films produced by selective deposition onto silicon wafers von Pauleau, Y., Lami, Ph, Tissier, A., Pantel, R., Oberlin, J.C.

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Raman signal vs. preparation conditions of C-implanted-and-excimer-laser-annealed Cu thin films von Fontaine, F., Deneuville, A., Germain, C., Catherinot, A., Abello, L., Lucazeau, G., Ligeon, E., Oberlin, J.C.

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Influence of the preparation conditions on the formation of WNx/WSi2/Si by thermal annealing under NH3 of W on Si von Deneuville, A., Benyahya, M., Brunel, M., Oberlin, J.C., Torres, J., Bourhila, N., Paleau, J., Canut, B.

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Influence of boron on WSi2 formation by direct reaction between tungsten and silicon von Torres, J., Oberlin, J.C., Stuck, R., Bourhila, N., Palleau, J., Göltz, G., Bomchil, G.

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Electronic defects induced in silicon by SF6 plasma etching von Belkacem, A., André, E., Oberlin, J.C., Pomot, C., Pajot, B., Chantre, A.

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Influence of boron on WSi 2 formation by direct reaction between tungsten and silicon von Torres, J., Oberlin, J.C., Stuck, R., Bourhila, N., Palleau, J., Göltz, G., Bomchil, G.

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Towards development of a salicide WSi 2 process using RTA von Bakli, M., Göltz, G., Vernet, M., Torrès, J., Palleau, J., Bourhila, N., Oberlin, J.C.

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Influence of the preparation conditions on the formation of WN x/WSi 2/Si by thermal annealing under NH 3 of W on Si von Deneuville, A., Benyahya, M., Brunel, M., Oberlin, J.C., Torres, J., Bourhila, N., Paleau, J., Canut, B.

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Strasbourg MP-10, status report von Oberlin, J.C., Heng, G., Letournel, M.

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Towards development of a salicide WSi2 process using RTA von Bakli, M., Göltz, G., Vernet, M., Torrès, J., Palleau, J., Bourhila, N., Oberlin, J.C.

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High quality silicon-on-insulator structures formed by oxygen implantation and annealing von Vu, D.P., Haond, Marjorie, d'Anterroches, C., Oberlin, J.C., Golanski, A., Grob, J.J., Maillet, S.

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Influence of H on the recrystallization of amorphous Si layers von Oberlin, J.C., Ligeon, E., Prunier, C., Chami, A.C.

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