Integration of SiOC air gaps in copper interconnects von Gosset, L.G, Arnal, V, Brun, Ph, Broekaart, M, Monget, C, Casanova, N, Rivoire, M, Oberlin, J.-C, Torres, J

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Fabrication and structure of epitaxial Er silicide films on (111) Si von ARNAUD D'AVITAYA, F, PERIO, A, OBERLIN, J.-C, CAMPIDELLI, Y, CHROBOCZEK, J. A

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Low pressure microwave electron cyclotron resonance plasma deposition of amorphous Ta2O5 films von Laviale, D., Oberlin, J. C., Devine, R. A. B.

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Anodic oxidation of porous silicon layers formed on lightly p-doped substrates von BSIESY, A, GASPARD, F, HERINO, R, LIGEON, M, MULLER, F

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Millitorr range PECVD of a-SiO2 films using TEOS and oxygen von Templier, F., Vallier, L., Madar, R., Oberlin, J.-C., Devine, R.A.B.

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Preparation of copper thin films at ambient temperature by microwave plasma-enhanced chemical vapor deposition from the copper (II) acetylacetonate-argon-hydrogen system von PELLETIER, J, PANTEL, R, OBERLIN, J. C, GOUY-PAILLER, P, PAULEAU, Y

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Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties von Duboz, J.-Y., Badoz, P.-A., Perio, A., Oberlin, J.-C., Arnaud D'Avitaya, F., Campidelli, Y., Chroboczek, J.A.

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Resist degradation under plasma exposure : synergistic effects of ion bombardment von JOUBERT, O, FIORI, C, OBERLIN, J. C, PANIEZ, P, PELLETIER, J, PONS, M, VACHETTE, T, WEILL, A

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Preparation of low resistivity tungsten thin films deposited by microwave-plasma-enhanced chemical vapour deposition from the tungsten hexafluoride-hydrogen system von Belkacem, A., Arnal, Y., Pelletier, J., André, E., Oberlin, J.C.

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Tungsten films produced by selective deposition onto silicon wafers von Pauleau, Y., Lami, Ph, Tissier, A., Pantel, R., Oberlin, J.C.

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Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry von FERRIEU, F, VU, D. P, D'ANTERROCHES, C, OBERLIN, J. C, MAILLET, S, GROB, J. J

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Influence of epitaxy on the low temperature silicon diffusion through gold layers von Cros, A., Dallaporta, H., Oberlin, J.C.

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Monitoring of the thermal annealing of HDP-Si oxides by positron annihilation and thermal desorption spectrometry von Schut, H., van Veen, A., Jørgensen, L.V., Dankert, O., Westerduin, K.T., Reader, A.H., Oberlin, J.C.

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Adhesion of LPCVD WSix/W bilayers on oxide films von LAMI, P, NORMANDON, P, OBERLIN, J. C

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High quality silicon-on-insulator structure formed by oxygen implantation and lamp annealing von VU, D. P, HAOND, M, D'ANTERROCHES, C, OBERLIN, J. C, GOLANSKI, A, GROB, J. J, MAILLET, S

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Effective elastic constants of thin-film tungsten-silicide from surface acoustic wave analysis von CREAN, G. M, GOLANSKI, A, OBERLIN, J. C

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The role of self diffusion in the dry development and plasma durability of polymers von Paniez, P.J., Joubert, O.P., Pons, M.J., Oberlin, J.C., Vachette, T.G., Weill, A.P., Pelletier, J.H., Fiori, C.

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Correlation between the elastic and structural properties of thin-film tungsten silicide layers from surface acoustic wave analysis von CREAN, G. M, GOLANSKI, A, OBERLIN, J. C, PERIO, A

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Leakage mechanism for tungsten/chromium metallized silicon p/n junctions von GIORDANO, P, GONCHOND, J. P, OBERLIN, J. C, NORMANDON, P, BASSET, R, CHANTRE, A

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Irreversible and reversible annealing of paramagnetic oxygen vacancies (E1' centers) in oxygen-implanted amorphous SiO2 von GOLANSKI, A, DEVINE, R. A. B, OBERLIN, J. C

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