Observation of strong reflection of electron waves exiting a ballistic channel at low energy von Vaz, Canute I., Liu, Changze, Campbell, Jason P., Ryan, Jason T., Southwick, Richard G., Gundlach, David, Oates, Anthony S., Huang, Ru, Cheung, Kin. P.

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Impact of Strained-Si PMOS Transistors on SRAM Soft Error Rates von Mahatme, Nihaar N., Bhuva, Bharat L., Fang, Yi-Pin, Oates, Anthony S.

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RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology von Qiang Li, Jinlong Zhang, Wei Li, Yuan, J.S., Yuan Chen, Oates, A.S.

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Electromigration failure of contacts and vias in sub-micron integrated circuit metallizations von Oates, Anthony S.

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Reliability challenges for the continued scaling of IC technologies von Oates, A. S.

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Frequency-Modulated Charge Pumping: Defect Measurements With High Gate Leakage von Ryan, Jason Thomas, Southwick, Richard G., Campbell, Jason Paul, Cheung, Kin P., Oates, Anthony S., Suehle, John S.

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New Insight Into NBTI Transient Behavior Observed From Fast- G Measurements von Campbell, J.P., Cheung, K.P., Suehle, J.S., Oates, A.S.

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Geometric Variability of Nanoscale Interconnects and Its Impact on the Time-Dependent Breakdown of Cu/Low- k Dielectrics von Shou-Chung Lee, Oates, Anthony S, Kow-Ming Chang

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Identification and Analysis of Dominant Electromigration Failure Modes in Copper/Low-K Dual Damascene Interconnects von Shou-Chung Lee, Oates, A.S.

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Editorial Kudos to Our Reviewers von Oates, Anthony S.

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Kudos to Our Reviewers von Oates, Anthony S.

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Happy 10th Birthday to T-DMR von Oates, Anthony S.

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Editorial Kudos to Our Reviewers von Oates, Anthony S.

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Neutron-Induced Charge Collection Simulation of Bulk FinFET SRAMs Compared With Conventional Planar SRAMs von Yi-Pin Fang, Oates, A. S.

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Technology Scaling Effect on the Relative Impact of NBTI and Process Variation on the Reliability of Digital Circuits von Vaidyanathan, B., Oates, A. S.

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An improved substrate current model for deep submicron MOSFETs von Li, Wei, Yuan, Jiann S., Chetlur, Sundar, Zhou, Jonathan, Oates, Anthony S.

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Characterization of NBTI-Induced Interface State and Hole Trapping in SiON Gate Dielectrics of p-MOSFETs von Jen-Hao Lee, Oates, Anthony S

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Reliability of HfSiON as gate dielectric for advanced CMOS technology von Wang, H.C.-H., Ching-Wei Tsai, Shang-Jr Chen, Chien-Tai Chan, Huan-Just Lin, Ying Jin, Hun-Jan Tao, Shih-Chang Chen, Diaz, C.H., Tongchern Ong, Oates, A.S., Mong-Song Liang, Min-Hwa Chi

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Editorial von Oates, Anthony S.

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Editorial von Oates, Anthony S.

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