Wafer-scale 3D integration of InGaAs photodiode arrays with Si readout circuits by oxide bonding and through-oxide vias von Chen, C.L., Yost, D.-R., Knecht, J.M., Wey, J., Chapman, D.C., Oakley, D.C., Soares, A.M., Mahoney, L.J., Donnelly, J.P., Chen, C.K., Suntharalingam, V., Berger, R., Hu, W., Wheeler, B.D., Keast, C.L., Shaver, D.C.

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Growth and characterization of GaInAsP/InP-based Geiger-mode avalanche photodiodes von Chapman, D.C., Vineis, C.J., Oakley, D.C., Napoleone, A., Smith, G.M., Duerr, E.K., Jensen, K.E., Donnelly, J.P., McIntosh, K.A., Verghese, S.

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Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy von Wang, C.A., Choi, H.K., Oakley, D.C., Charache, G.W.

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Afterpulsing in Geiger-mode avalanche photodiodes for 1.06μm wavelength von Jensen, K. E., Hopman, P. I., Duerr, E. K., Dauler, E. A., Donnelly, J. P., Groves, S. H., Mahoney, L. J., McIntosh, K. A., Molvar, K. M., Napoleone, A., Oakley, D. C., Verghese, S., Vineis, C. J., Younger, R. D.

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InGaAsP/InP avalanche photodiodes for photon counting at 1.06 μm von McIntosh, K. A., Donnelly, J. P., Oakley, D. C., Napoleone, A., Calawa, S. D., Mahoney, L. J., Molvar, K. M., Duerr, E. K., Groves, S. H., Shaver, D. C.

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High-Power, Low-Noise 1.5-μm Slab-Coupled Optical Waveguide (SCOW) Emitters: Physics, Devices, and Applications von Juodawlkis, P. W., Plant, J. J., Loh, W., Missaggia, L. J., O'Donnell, F. J., Oakley, D. C., Napoleone, A., Klamkin, J., Gopinath, J. T., Ripin, D. J., Gee, S., Delfyett, P. J., Donnelly, J. P.

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The Scoliosis Quandary: Are Radiation Exposures From Repeated X-Rays Harmful? von Oakley, Paul A., Ehsani, Niousha Navid, Harrison, Deed E.

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Design considerations for 1.06- mu m InGaAsP-InP Geiger-mode avalanche photodiodes von Donnelly, J P, Duerr, E K, McIntosh, KA, Dauler, E A, Oakley, D C, Groves, SH, Vineis, C J, Mahoney, L J, Molvar, K M, Hopman, P I, Jensen, KE, Smith, G M, Verghese, S, Shaver, D C

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5 Reasons Why Scoliosis X-Rays Are Not Harmful von Oakley, Paul A., Navid Ehsani, Niousha, Harrison, Deed E.

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High-Quality 150 mm InP-to-Silicon Epitaxial Transfer for Silicon Photonic Integrated Circuits von Liang, D., Bowers, J. E., Oakley, D. C., Napoleone, A., Chapman, D. C., Chen, C.-L., Juodawlkis, P. W., Raday, O.

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Limits to Maximum Absorption Length in Waveguide Photodiodes von Madison, S. M., Klamkin, J., Oakley, D. C., Napoleone, A., Plant, J. J., Juodawlkis, P. W.

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Geiger-mode avalanche photodiodes for photon-counting communications von Verghese, S., Cohen, D.M., Dauler, E.A., Donnelly, J.P., Duerr, E.K., Groves, S.H., Hopman, P.I., Jensen, K.E., Liau, Z.-L., Mahoney, L.J., McIntosh, K.A., Oakley, D.C., Smith, G.M.

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Scaling of dark count rate with active area in 1.06μm photon-counting InGaAsP∕InP avalanche photodiodes von Dauler, E. A., Hopman, P. I., McIntosh, K. A., Donnelly, J. P., Duerr, E. K., Magliocco, R. J., Mahoney, L. J., Molvar, K. M., Napoleone, A., Oakley, D. C., O’Donnell, F. J.

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150 mm InP-to-Silicon Direct Wafer Bonding for Silicon Photonic Integrated Circuits von Liang, Di, Fang, Alexander, Oakley, Douglas, Napoleone, Antonio, Chapman, David, Chen, Chang-Lee, Juodawlkis, Paul, Raday, Omri, Bowers, John E.

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Microwave photonic applications of slab-coupled optical waveguide devices von Juodawlkis, P W, Plant, J J, Madison, S M, Loh, W, O'Donnell, F J, Oakley, D C, Napoleone, A

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Scaling of dark count rate with active area in 1.06 μ m photon-counting In Ga As P ∕ In P avalanche photodiodes von Dauler, E. A., Hopman, P. I., McIntosh, K. A., Donnelly, J. P., Duerr, E. K., Magliocco, R. J., Mahoney, L. J., Molvar, K. M., Napoleone, A., Oakley, D. C., O'Donnell, F. J.

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Afterpulsing in Geiger-mode avalanche photodiodesfor 1.06 μ m wavelength von Jensen, K. E., Hopman, P. I., Duerr, E. K., Dauler, E. A., Donnelly, J. P., Groves, S. H., Mahoney, L. J., McIntosh, K. A., Molvar, K. M., Napoleone, A., Oakley, D. C., Verghese, S., Vineis, C. J., Younger, R. D.

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Design considerations for 1.06-[mu]m InGaAsP-InP Geiger-mode avalanche photodiodes von Donnelly, J.P, Duerr, E.K, McIntosh, K.A, Dauler, E.A, Oakley, D.C, Groves, S.H, Vineis, C.J, Mahoney, L.J, Molvar, K.M, Hopman, P.I, Jensen, K.E, Smith, G.M, Verghese, S, Shaver, D.C

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High-power and high-speed waveguide uni-traveling-carrier photodiodes for microwave photonics applications von Klamkin, J., Madison, S. M., Oakley, D. C., Napoleone, A., O'Donnell, F. J., Sheehan, M., Missaggia, L. J., Caissie, J. M., Plant, J. J., Juodawlkis, P. W.

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Reliable large format arrays of Geiger-mode avalanche photodiodes von Smith, G.M., Donnelly, J.P., McIntosh, K.A., Duerr, E.K., Shaver, D.C., Verghese, S., Funk, J.E., Mahoney, L.J., Molvar, K.M., Chapman, D.C., Oakley, D.C.

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