A single meal has the potential to alter brain oxylipin content von Norman, J.E., Aung, H.H., Otoki, Y., Zhang, Z., Taha, A.Y., Rutledge, J.C.

Volltext

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage von LANFORD, W. B, TANAKA, T, OTOKI, Y, ADESIDA, I

Volltext

High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate von Kumar, V., Kuliev, A., Tanaka, T., Otoki, Y., Adesida, I.

Volltext

Leak current in high resistive GaN buffer layer and its light responsiveness von Tanaka, T., Moriya, Y., Sahara, M., Yukimoto, T., Kamogawa, H., Otoki, Y., Mishima, T.

Volltext

Lipidomics and redox lipidomics indicate early stage alcohol-induced liver damage von Koelmel, JP, Tan, WY, Li, Y, Bowden, JA, Ahmadireskety, A, Patt, AC, Orlicky, DJ, Mathe, E, Kroeger, NM, Thompson, DC, Cochran, JA, Golla, JP, Kandyliari, A, Chen, Y, Charkoftaki, G, Guingab-Cagmat, JD, Tsugawa, H, Arora, A, Veselkov, K, Kato, S, Otoki, Y, Nakagawa, K, Yost, RA, Garrett, TJ, Vasilou, V

Volltext

Influence of n-GaAs/i-AlGaAs heterostructure interfaces on the electrical properties of the n-GaAs channel layer von Otoki, Y., Sahara, M., Nagai, H., Sakaguchi, H., Takahashi, S., Kuma, S.

Volltext

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage von Lanford, W B, Tanaka, T, Otoki, Y, Adesida, I

Volltext

High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate von Kumar, V, Kuliev, A, Tanaka, T, Otoki, Y, Adesida, I

Volltext

Carbon in LEC Grown GaAs Crystals von Sahara, M., Shinzawa, S., Kuma, S., Otoki, Y.

Volltext

Investigation of changes of As precipitates in semi-insulating GaAs crystals at several temperatures by infrared light scattering tomography von Otoki, Yoohei, Watanabe, Masatoshi, Inada, Tomoki, Kuma, Shoji

Volltext

Thermal Precipitation of Excess Arsenic on Dislocations in LEC Grwon GaAs Crystal von Shibata, Misawo, Sahara, M., Kuma, S., Otoki, Y., Kashiwa, M.

Volltext

Effects of thermal history during LEC growth on behavior of excess arsenic in semi-insulating GaAs von Inada, Tomoki, Otoki, Yohei, Ohata, Katsumi, Taharasako, Shuichi, Kuma, Shoji

Volltext

Quasi-Quantitative Estimation of Solidus Curve on Arsenic-Rich Side of Ga--As System von Inada, T, Otoki, Y, Kuma, S

Volltext

Quasi-quantitative estimation of solidus curve on As-rich side of Ga-As system von Inada, Tomoki, Otoki, Yoohei, Kuma, Shoji

Volltext

Influence of boron in semi-insulating GaAs crystals on their electrical activation by Si-ion implantation von OKUBO, S, OTOKI, Y, WATANABE, M, KUMA, S

Volltext

Electrical insulation properties of carbon-controlled semi-insulating GaAs von OTOKI, Y, WATANABE, M, TAKAHASHI, S, KUMA, S, OKUBO, S

Volltext

Properties of Metal-Semiconductor Field-Effect Transistors Fabricated on Carbon-Doped Semi-Insulating GaAs Crystal Grown by Liquid Encapsulated Czochralski Method von OTOKI, Y, WATANABE, M, KUMA, S, TAKAHASHI, S, ONISHI, M, KASHIWA, M

Volltext

Degradation of activation on Si-implanted GaAs crystal wafers by mechanical surface damages von WATANABE, M, SHINZAWA, S, OKUBO, S, OTOKI, Y, KUMA, S

Volltext

7a-X-1 Black and White contrast of disiocation Images In X-ray topographs of GaAs crystal von Nogami, S., Iida, S., Otoki, Y.

Volltext

Investigation of changes of As precipitates in semi-insulting GaAs crystals at several temperatures by infrared light scattering tomography von OTOKI, Y, WATANABE, M, INADA, T, KUMA, S

Volltext