Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments von Lagger, Peter, Reiner, Maria, Pogany, Dionyz, Ostermaier, Clemens

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Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs von Lagger, Peter, Schiffmann, Alexander, Pobegen, Gregor, Pogany, Dionyz, Ostermaier, Clemens

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Dynamics of hole injection from p-GaN drain of a hybrid drain embedded GIT von Sun, Jinming, Haeberlen, Oliver, Ostermaier, Clemens, Prechtl, Gerhard, Tadikonda, Ramakrishna, Persson, Eric, Garg, Reenu, Imam, Mohamed, Khalil, Sameh, Charles, Alain

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Physical-chemical stability of fluorinated III-N surfaces: Towards the understanding of the (0001) AlxGa1-xN surface donor modification by fluorination von Reiner, Maria, Schellander, Josef, Denifl, Günter, Stadtmueller, Michael, Schmid, Michael, Frischmuth, Tobias, Schmid, Ulrich, Pietschnig, Rudolf, Ostermaier, Clemens

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Effect of Carbon Doping on Charging/Discharging Dynamics and Leakage Behavior of Carbon-Doped GaN von Koller, Christian, Pobegen, Gregor, Ostermaier, Clemens, Pogany, Dionyz

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The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers von Koller, Christian, Pobegen, Gregor, Ostermaier, Clemens, Huber, Martin, Pogany, Dionyz

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Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants von Butej, Boris, Padovan, Valeria, Pogany, Dionyz, Pobegen, Gregor, Ostermaier, Clemens, Koller, Christian

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Evidence‐Based Understanding of Lateral Hole Transport During OFF‐State Stress Completing Dynamic GaN‐on‐Si Buffer Charging Model von Butej, Boris, Wieland, Dominik, Pogany, Dionyz, Gharib, Amgad, Pobegen, Gregor, Ostermaier, Clemens, Koller, Christian

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Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors von Kuzmik, Jan, Vitanov, Stanislav, Dua, Christian, Carlin, Jean-Francois, Ostermaier, Clemens, Alexewicz, Alexander, Strasser, Gottfried, Pogany, Dionyz, Gornik, Erich, Grandjean, Nicolas, Delage, Sylvain, Palankovski, Vassil

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Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs von Minetto, Andrea, Modolo, Nicola, Sayadi, Luca, Koller, Christian, Ostermaier, Clemens, Meneghini, Matteo, Zanoni, Enrico, Prechtl, Gerhard, Sicre, Sebastien, Deutschmann, Bernd, Haberlen, Oliver

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Tracking the Effect of Adatom Electronegativity on Systematically Modified AlGaN/GaN Schottky Interfaces von Reiner, Maria, Pietschnig, Rudolf, Ostermaier, Clemens

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Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6 von Ostermaier, Clemens, Pozzovivo, Gianmauro, Basnar, Bernhard, Schrenk, Werner, Carlin, Jean-Fran\{c}ois, Gonschorek, Marcus, Grandjean, Nicolas, Vincze, Andrej, Tóth, Lajos, Pécz, Bela, Strasser, Gottfried, Pogany, Dionyz, Kuzmik, Jan

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Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs von Stradiotto, Roberta, Pobegen, Gregor, Ostermaier, Clemens, Waltl, Michael, Grill, Alexander, Grasser, Tibor

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Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN von Koller, Christian, Pobegen, Gregor, Ostermaier, Clemens, Hecke, Gebhard, Neumann, Richard, Holzbauer, Martin, Strasser, Gottfried, Pogany, Dionyz

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Through-layer XPS investigations of the Si3N4/AlGaN interface von Reiner, Maria, Denifl, Guenter, Stadtmueller, Michael, Pietschnig, Rudolf, Ostermaier, Clemens

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Characterization of charge trapping phenomena at III–N/dielectric interfaces von Stradiotto, Roberta, Pobegen, Gregor, Ostermaier, Clemens, Grasser, Tibor

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Through-layer XPS investigations of the Si sub(3)N sub(4)/AlGaN interface von Reiner, Maria, Denifl, Guenter, Stadtmueller, Michael, Pietschnig, Rudolf, Ostermaier, Clemens

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Through‐layer XPS investigations of the Si 3 N 4 /AlGaN interface von Reiner, Maria, Denifl, Guenter, Stadtmueller, Michael, Pietschnig, Rudolf, Ostermaier, Clemens

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Chemical understanding and utility of H3PO4 etching of group-III- nitrides von Reiner, Maria, Reiss, Marcus, Brünig, Thorge, Knuuttila, Lauri, Pietschnig, Rudolf, Ostermaier, Clemens

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Multi-Channel High Electron Mobility Transistor with Reduced Input Capacitance von Ostermaier, Clemens

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