Second-harmonic generation in silicon waveguides strained by silicon nitride von Cazzanelli, M., Bianco, F., Borga, E., Pucker, G., Ghulinyan, M., Degoli, E., Luppi, E., Véniard, V., Ossicini, S., Modotto, D., Wabnitz, S., Pierobon, R., Pavesi, L.

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RETRACTED: Ossicini, A. On the Nature of Some Euler’s Double Equations Equivalent to Fermat’s Last Theorem. Mathematics 2022, 10, 4471 von Ossicini, Andrea

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Dynamics of stimulated emission in silicon nanocrystals von Dal Negro, L., Cazzanelli, M., Pavesi, L., Ossicini, S., Pacifici, D., Franzò, G., Priolo, F., Iacona, F.

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Simultaneously B- and P-doped silicon nanoclusters: Formation energies and electronic properties von Ossicini, S., Degoli, E., Iori, F., Luppi, E., Magri, R., Cantele, G., Trani, F., Ninno, D.

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Expression of Concern: Ossicini, A. On the Nature of Some Euler’s Double Equations Equivalent to Fermat’s Last Theorem. Mathematics 2022, 10, 4471 von Mathematics Editorial Office

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Silicon nanocrystals in carbide matrix von Summonte, C., Allegrezza, M., Bellettato, M., Liscio, F., Canino, M., Desalvo, A., López-Vidrier, J., Hernández, S., López-Conesa, L., Estradé, S., Peiró, F., Garrido, B., Löper, P., Schnabel, M., Janz, S., Guerra, R., Ossicini, S.

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Preferential Positioning of Dopants and Co-Dopants in Embedded and Freestanding Si Nanocrystals von Guerra, Roberto, Ossicini, Stefano

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First-principles optical properties of silicon and germanium nanowires von Bruno, M., Palummo, M., Ossicini, S., Del Sole, R.

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Multiple exciton generation in isolated and interacting silicon nanocrystals von Marri, Ivan, Ossicini, Stefano

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On the Nature of Some Euler's Double Equations Equivalent to Fermat's Last Theorem von Ossicini, Andrea

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Silicon–Germanium Nanowires: Chemistry and Physics in Play, from Basic Principles to Advanced Applications von Amato, Michele, Palummo, Maurizia, Rurali, Riccardo, Ossicini, Stefano

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Many-body effects on the electronic and optical properties of Si nanowires from ab initio approaches von Palummo, M., Ossicini, S., Del Sole, R.

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Carrier multiplication between interacting nanocrystals for fostering silicon-based photovoltaics von Govoni, Marco, Marri, Ivan, Ossicini, Stefano

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Preferential Positioning, Stability, and Segregation of Dopants in Hexagonal Si Nanowires von Amato, Michele, Ossicini, Stefano, Canadell, Enric, Rurali, Riccardo

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Self-energy and excitonic effects in the electronic and optical properties of TiO₂ crystalline phases von Chiodo, Letizia, Garcia-Lastra, Juan M., Iaocomino, Amilcare, Ossicini, Stefano, Zhao, Jin, Petek, Hrvoje, Rubio, Angel

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Doped and codoped silicon nanocrystals: The role of surfaces and interfaces von Marri, Ivan, Degoli, Elena, Ossicini, Stefano

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RETRACTED: On the Nature of Some Euler’s Double Equations Equivalent to Fermat’s Last Theorem von Ossicini, Andrea

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Role of strain in interacting silicon nanoclusters von Guerra, Roberto, Ossicini, Stefano

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Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures von Marri, Ivan, Amato, Michele, Bertocchi, Matteo, Ferretti, Andrea, Varsano, Daniele, Ossicini, Stefano

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Doping in silicon nanostructures von Iori, F., Ossicini, S., Degoli, E., Luppi, E., Poli, R., Magri, R., Cantele, G., Trani, F., Ninno, D.

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