Materials issues and devices of α- and β-Ga2O3 von Ahmadi, Elaheh, Oshima, Yuichi

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Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches von Oshima, Takayoshi, Oshima, Yuichi

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Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas von Oshima, Takayoshi, Oshima, Yuichi

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Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications von Oshima, Yuichi, Ahmadi, Elaheh

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Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy von Oshima, Takayoshi, Oshima, Yuichi

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Anisotropic non-plasma HCl gas etching of a (010) β-Ga2O3 substrate von Oshima, Takayoshi, Oshima, Yuichi

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Homoepitaxial growth of 1ˉ02  β-Ga2O3 by halide vapor phase epitaxy von Oshima, Yuichi, Oshima, Takayoshi

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Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching von Oshima, Yuichi, Yagyu, Shingo, Shinohe, Takashi

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Plasma-free anisotropic selective-area etching of β-Ga2O3 using forming gas under atmospheric pressure von Oshima, Takayoshi, Togashi, Rie, Oshima, Yuichi

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Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga2O3 von Oshima, Yuichi, Oshima, Takayoshi

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Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure von Oshima, Takayoshi, Togashi, Rie, Oshima, Yuichi

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Homoepitaxial growth of 1ˉ02  β-Ga 2 O 3 by halide vapor phase epitaxy von Oshima, Yuichi, Oshima, Takayoshi

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Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination von Oshima, Takayoshi, Imura, Masataka, Oshima, Yuichi

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Anisotropic non-plasma HCl gas etching of a (010) β-Ga 2 O 3 substrate von Oshima, Takayoshi, Oshima, Yuichi

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Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy von Oshima, Yuichi, Ando, Hiroyuki, Shinohe, Takashi

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Hydride vapor phase epitaxy and characterization of high-quality ScN epilayers von Oshima, Yuichi, Víllora, Encarnación G., Shimamura, Kiyoshi

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Selective area growth of β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy von Oshima, Takayoshi, Oshima, Yuichi

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Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga 2 O 3 von Oshima, Yuichi, Oshima, Takayoshi

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In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism von Oshima, Yuichi, Kawara, Katsuaki, Oshima, Takayoshi, Shinohe, Takashi

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Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy von Oshima, Yuichi, Yoshida, Takehiro, Watanabe, Kazutoshi, Mishima, Tomoyoshi

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