Need for revision of the ACMG/AMP guidelines for interpretation of X-linked variants von Inoue, Yoko, Machida, Osamu, Kita, Yosuke, Yamamoto, Toshiyuki

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Interstitial deletions in the proximal regions of 6q: 12 original cases and a literature review von Machida, Osamu, Shimojima, Keiko Yamamoto, Shiihara, Takashi, Akamine, Satoshi, Kira, Ryutaro, Hasegawa, Yuiko, Nishi, Eriko, Okamoto, Nobuhiko, Nagata, Satoru, Yamamoto, Toshiyuki

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Novel BCL11B truncation variant in a patient with developmental delay, distinctive features, and early craniosynostosis von Eto, Kaoru, Machida, Osamu, Yanagishita, Tomoe, Shimojima Yamamoto, Keiko, Chiba, Kentaro, Aihara, Yasuo, Hasegawa, Yuuki, Nagata, Miho, Ishihara, Yasuki, Miyashita, Yohei, Asano, Yoshihiro, Nagata, Satoru, Yamamoto, Toshiyuki

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Haploinsufficiency of NKX2-1 is likely to contribute to developmental delay involving 14q13 microdeletions von Machida, Osamu, Sakamoto, Haruko, Yamamoto, Keiko Shimojima, Hasegawa, Yuiko, Nii, Satoi, Okada, Hidenori, Nishikawa, Kazuki, Sumimoto, Shin-Ichi, Nishi, Eriko, Okamoto, Nobuhiko, Yamamoto, Toshiyuki

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Fabrication of Lead Zirconate Titanate Films by Inkjet Printing von Machida, Osamu, Shimofuku, Akira, Tashiro, Ryo, Takeuchi, Atsushi, Akiyama, Yoshikazu, Ohta, Eiichi

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AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) on Si Substrates for Large-Current Operation von Iwakami, Shinichi, Yanagihara, Masataka, Machida, Osamu, Chino, Emiko, Kaneko, Nobuo, Goto, Hirokazu, Ohtsuka, Kohji

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Fabrication of Multilayer Pb(Zr0.53Ti0.47)O3 Film Crystallized by Laser Annealing von Chen, Xianfeng, Yagi, Masahiro, Akiyama, Yoshikazu, Machida, Osamu, Ohta, Eiichi, Meixner, Melanie, Stollenwerk, Jochen, Boettger, Ulrich, Schneller, Theodor

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Fabrication of Lead Zirconate Titanate Films by Inkjet Printing von Machida, Osamu, Shimofuku, Akira, Tashiro, Ryo, Takeuchi, Atsushi, Akiyama, Yoshikazu, Ohta, Eiichi

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A Novel High-Efficiency Gate Drive Circuit for Normally Off-Type GaN FET von Umegami, Hirokatsu, Hattori, Fumiya, Nozaki, Yu, Yamamoto, Masayoshi, Machida, Osamu

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Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction Circuit von Iwakami, Shinichi, Machida, Osamu, Izawa, Yoshimichi, Baba, Ryohei, Yanagihara, Masataka, Ehara, Toshihiro, Kaneko, Nobuo, Goto, Hirokazu, Iwabuchi, Akio

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LIQUID DISCHARGE APPARATUS AND LIQUID DISCHARGE METHOD von MACHIDA, Osamu

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Fabrication of Lead Zirconate Titanate Thin Films by Inkjet Printing von Ohta, Eiichi, Akiyama, Yoshikazu, Shimofuku, Akira, Takeuchi, Atsushi, Machida, Osamu

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20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate von Iwakami, Shinichi, Machida, Osamu, Yanagihara, Masataka, Ehara, Toshihiro, Kaneko, Nobuo, Goto, Hirokazu, Iwabuchi, Akio

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Fabrication of Multilayer Pb(Zr 0.53 Ti 0.47 )O 3 Film Crystallized by Laser Annealing von Chen, Xianfeng, Yagi, Masahiro, Akiyama, Yoshikazu, Machida, Osamu, Ohta, Eiichi, Meixner, Melanie, Stollenwerk, Jochen, Boettger, Ulrich, Schneller, Theodor

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Fabrication of Multilayer Pb(Zr sub(0.53)Ti sub(0.53))O sub(3) Film Crystallized by Laser Annealing von Chen, Xianfeng, Yagi, Masahiro, Akiyama, Yoshikazu, Machida, Osamu, Ohta, Eiichi, Meixner, Melanie, Stollenwerk, Jochen, Boettger, Ulrich, Schneller, Theodor

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Normally-off AlGaN/GaN HFETs using NiOx gate with recess von Kaneko, N., Machida, O., Yanagihara, M., Iwakami, S., Baba, R., Goto, H., Iwabuchi, A.

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DEVICE FOR DISCHARGING LIQUID AND METHOD FOR DISCHARGING LIQUID von MACHIDA OSAMU

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LIQUID DISCHARGE HEAD, LIQUID DISCHARGE UNIT AND LIQUID DISCHARGE DEVICE von MACHIDA OSAMU

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Fabrication of Patterned PZT Thick Films by Inkjet Printing von Takeuchi, Atsushi, Machida, Osamu, Shimofuku, Akira, Chen, Xianfeng, Akiyama, Yoshikazu, Ohta, Eiichi

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SEMICONDUCTOR CIRCUIT, METHOD OF CONTROLLING THE SAME, AND BRIDGE CIRCUIT von MACHIDA OSAMU

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