Group III nitride semiconductors for short wavelength light-emitting devices von Orton, J W, Foxon, C T

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Semiconductors and the Information Revolution: Magic Crystals That Made IT Happen von Orton, John W

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Molecular Beam Epitaxy: A Short History von Orton, John, Foxon, Tom

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Photoluminescence of MBE grown wurtzite Be-doped GaN von Dewsnip, D J, Andrianov, A V, Harrison, I, Orton, J W, Lacklison, D E, Ren, G B, Hooper, S E, Cheng, T S, Foxon, C T

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Exciton spectra and spin - orbit splitting in GaN epitaxial films von Orton, J W

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Low-temperature luminescence study of GaN films grown by MBE von Andrianov, A V, Lacklison, D E, Orton, J W, Dewsnip, D J, Hooper, S E, Foxon, C T

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Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy von Cheng, T.S., Novikov, S.V., Foxon, C.T., Orton, J.W.

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Band gap of GaN films grown by molecular-beam epitaxy on GaAs and GaP substrates von Lacklison, D. E., Orton, J. W., Harrison, I., Cheng, T. S., Jenkins, L. C., Foxon, C. T., Hooper, S. E.

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Observation of resonant Raman lines during the photoluminescence of doped GaN von Dewsnip, D J, Andrianov, A V, Harrison, I, Lacklison, D E, Orton, J W, Morgan, J, Ren, G B, Cheng, T S, Hooper, S E, Foxon, C T

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Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate von ANDRIANOV, A. V, LACKLISON, D. E, ORTON, J. W, CHENG, T. S, FOXON, C. T, O'DONNELL, K. P, NICHOLLS, J. F. H

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Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates von Cheng, T.S., Hooper, S.E., Jenkins, L.C., Foxon, C.T., Lacklison, D.E., Dewsnip, J.D., Orton, J.W.

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Characteristics of amorphous silicon staggered-electrode thin-film transistors von POWELL, M. J, ORTON, J. W

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The mechanism of photoconductivity in polycrystalline cadmium sulphide layers von Orton, J. W., Goldsmith, B. J., Chapman, J. A., Powell, M. J.

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The growth and properties of mixed group V nitrides von Orton, J. W., Lacklison, D. E., Baba-Ali, N., Foxon, C. T., Cheng, T. S., Novikov, S. V., Johnston, D. F. C., Hooper, S. E., Jenkins, L. C., Challis, L. J., Tansley, T. L.

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Weight and neuron output resolution requirements in optoelectronic neural networks von Allen, T J, Curtis, K M, Orton, J W

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Auger investigation of group III nitride films grown by molecular beam epitaxy von Novikov, S.V., Foxon, C.T., Cheng, T.S., Tansley, T.L., Orton, J.W., Lacklison, D.E., Johnston, D., Baba-Ali, N., Hooper, S.E., Jenkins, L.C., Eaves, L.

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Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes von Andrianov, A. V., Dods, S. R. A., Morgan, J., Orton, J. W., Benson, T. M., Harrison, I., Larkins, E. C., Daiminger, F. X., Vassilakis, E., Hirtz, J. P.

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Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy von Cheng, T.S., Foxon, C.T., Jenkins, L.C., Hooper, S.E., Orton, J.W., Novikov, S.V., Popova, T.B., Tret'yakov, V.V.

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The miner's guide and metallurgist's directory ... By J. W. Orton von Orton, J. W

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Raman spectroscopy of GaAs-AlAs superlattices: a study of interface roughness von York, R.J., Smith, S.R.P., Dumelow, T., Foxon, C.T., Hilton, D., Orton, J.W.

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