New method to extract the model parameters of solar cells from the explicit analytic solutions of their illuminated characteristics von ORTIZCONDE, A, GARCIASANCHEZ, F, MUCI, J

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A new approach to extract the threshold voltage of MOSFETs von Ortiz-Conde, A., Gouveia Fernandes, E.D., Liou, J., Rofiqul Hassan, M., Garcia-Sanchez, F.J., de Mercato, G., Waisum Wong

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Anomalous leakage current in LPCVD PolySilicon MOSFET's von Fossum, J.G., Ortiz-Conde, A., Shichijo, H., Banerjee, S.K.

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High-level injection in quasi-neutral region of n / p junction devices: Numerical results and empirical model von Yue, Y., Liou, J. J., Ortiz-Conde, A.

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A study of the validity of capacitance-based method for extracting the effective channel length of MOSFET's von Latif, Z., Ortiz-Conde, A., Liou, J.J., Sanchez, F.J.G.

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Long-channel silicon-on-insulator MOSFET theory von Ortiz-Conde, A., Herrera, R., Schmidt, P.E., Sánchez, F.J.García, Andrian, J.

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Determination of physical mechanisms contributing to the difference between drain and source resistances in short-channel MOSFETs von Ortiz-Conde, A., Liou, J.J., Narayanan, R., García Sánchez, F.J.

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An improved method for extracting the difference between drain and source resistances in MOSFETs von Ortiz-Conde, A, Garcia Sanchez, F.J, Liou, J.J

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Effects of high-level free-carrier injection on the base transit time of bipolar junction transistors von Yue, Y., Liou, J.J., Ortiz-Conde, A., Sanchez, F.Garcia

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Effects of grain boundaries on the channel conductance of SOI MOSFETs von FOSSUM, J. G, ORTIZ-CONDE, A

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Drain and source resistances of short-channel LDD MOSFETs von Rofiqul Hassan, Md, Liou, J.J, Ortiz-Conde, A, García Sánchez, F.J, Gouveia Fernandes, E

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Extracting the series resistance and effective channel length of short-channel MOSFETs at liquid nitrogen temperature von García Sánchez, F.J., Ortiz-Conde, A., García Núñez, M., Anderson, R.L.

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Gate-oxide thickness dependence of LDD MOSFET parameters von Hassan, Md.R, Liou, J.J, Ortiz-Conde, A

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Analysis of the validity of methods for extracting the effective channel length of short-channel LDD MOSFETs von Latif, Z., Liou, J.J., Ortiz-Conde, A., Garcia Sanchez, F.J., Wang, W., Chen, Y.G.

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Thermal-avalanche interacting behaviour of AlGaAs/GaAs multi-emitter finger heterojunction bipolar transistors von LIOU, J. J, ORTIZ-CONDE, A, LIOU, L. L, HUANG, C. I

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Subthreshold behavior of thin-film LPCVD PolySilicon MOSFET's von Ortiz-Conde, A., Fossum, J.G.

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Relative errors for free-carrier density at different temperatures calculated from approximations for the Fermi-Dirac integral von YUN YUE, LIOU, J. J, ORTIZ-CONDE, A

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Transconductances of the long-channel silicon-on-insulator MOSFET von Ortiz-Conde, A., Sánchez, F.J.García, Schmidt, P.E., Andrian, J., Paris, E.

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The effects of space-charge-layer thickness modulation on diffusion capacitance von LIOU, J. J, ORTIZ-CONDE, A

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The nonequilibrium inversion layer charge of the thin-film SOI MOSFET von Ortiz-Conde, A., Garcia Sanchez, F.J., Schmidt, P.E., Sa-Neto, A.

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