Effect of atomic silicon and germanium beams on the growth kinetics of [Si.sub.1-x][Ge.sub.x] layers in Si-Ge[H.sub.4] molecular beam epitaxy von Orlov, L.K, Ivin, S.V, Fomin, V.M

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Features of the two-component decomposition of monosilane molecules on a silicon surface under epitaxial-process conditions von Ivina, N. L., Orlov, L. K.

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Kinetics of disilane molecule decomposition on the growth surface of silicon in vacuum gas-phase epitaxy reactors von Orlov, L. K., Smyslova, T. N.

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Features of electron transport in relaxed Si/[Si.sub.1-x][Ge.sub.x] transistor heterostructures with a high doping level von Orlov, M.L, Horvath, Zs. J, Ivina, N.L, Neverov, V.N, Orlov, L.K

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Vacuum hydride epitaxy of silicon: kinetics of monosilane pyrolysis on the growth surface von Orlov, L. K., Ivin, S. V.

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Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level von Orlov, L.K., nikova, A.A.Mel’, Orlov, M.L., Alyabina, N.A., Ivina, N.L., Neverov, V.N., Horváth, Zs.J.

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Specific features and mechanisms of photoluminescence of nanostructured silicon carbide films grown on silicon in vacuum von Orlov, L. K., Shteinman, E. A., Ivina, N. L., Vdovin, V. I.

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Electrical behaviour of Al/SiGe/Si heterostructures: effect of surface treatment and dislocations von Horváth, Zs.J, Ádám, M, Szabó, I, Orlov, L.K, Potapov, A.V, Tolomasov, V.A

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The growth kinetics of Si1−xGex layers from SiH4 and GeH4 von Potapov, A.V., Orlov, L.K., Ivin, S.V.

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The growth kinetics of Si 1− xGe x layers from SiH 4 and GeH 4 von Potapov, A.V., Orlov, L.K., Ivin, S.V.

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Dislocation pattern formation in epitaxial structures based on SiGe alloys von Yugova, T.G, Vdovin, V.I, Mil’vidskii, M.G, Orlov, L.K, Tolomasov, V.A, Potapov, A.V, Abrosimov, N.V

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Kinetics of Surface Processes and Mechanisms of Alloy Intermixing Near Interfaces in Si(Ge)/Si1-xGex Structures Grown by Molecular Beam Epitaxy with Combined Sources von Orlov, L.K., Ivina, N.L.

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The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si1-xGex Interfaces Abruptness von Ivin, S.V., Orlov, L.K., Potapov, A.V.

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Electrophysical studies of 2D-hole spectral characteristics and peculiarities of scattering mechanisms in Ge layers of Ge–Ge 1− xSi x heterostructures von Orlov, L.K., Potapov, A.V., Rubtsova, R.A., Arapov, Yu, Gorodilov, N., Shelushinina, N., Yang, Fuhua, Leotin, J., Goiran, M.

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Anisotropy of the conductivity and high-frequency characteristics of two-dimensional quantum superlattices in a strong electric field von Orlov, M.L., Romanov, Yu. A., Orlov, L.K.

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Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si1-xGex Epitaxial Structures Obtained by MBE Method von Vdovin, V.I., Orlov, L.K., Potapov, A.V., Steinman, E.A., Ivina, N.L.

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Peculiarities of Raman Spectra and Real Structure of Ge1-xSix Solid Solution von Dietrich, B., Orlov, L.K.

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Electrophysical studies of 2D-hole spectral characteristics and peculiarities of scattering mechanisms in Ge layers of Ge–Ge1−xSix heterostructures von Orlov, L.K., Potapov, A.V., Rubtsova, R.A., Arapov, Yu, Gorodilov, N., Shelushinina, N., Yang, Fuhua, Leotin, J., Goiran, M.

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Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge1-xSix Multiple Quantum Well Structures von Kuznetsov, O.A., Kalugin, N.G., Orlov, L.K.

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Correlations between the surface morphology and electronic properties of porous multilayer structures with quantum InGaAs layers von Ivina, N.L., Orlov, L.K., Shevtsov, V.B., Alyabina, N.A.

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