A calibration of the localized vibrational mode absorption line due to isovalent boron impurities in gallium arsenide von Addinall, R, Newman, R C, Okada, Y, Orito, F

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Total simulation model of high pressure liquid encapsulated Czochralski crystal growth von Ishida, M., Katano, K., Kawabata, S., Higuchi, Y., Orito, F., Yamaguchi, Y., Yajima, F., Okano, T.

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Growth of silicon-doped dislocation-free GaAs crystals by the LEC technique for optical device applications von ORITO, F, OKADA, H, NAKAJIMA, M, FUKUDA, T, KAJIMURA, T

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The effect of silicon doping on lattice parameter and silicon related defects in gallium arsenide grown by the gradient freeze method von FUJII, K, OKADA, Y, ORITO, F

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Anomalous reduction of lattice parameter by residual impurity boron in undoped Czochralski-grown GaAs von OKADA, Y, ORITO, F

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Defect reactions by heat treatment of heavily silicon doped gallium arsenide von OKADA, Y, FUJII, K, ORITO, F, MUTO, S

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Formation and behavior of B sub(Ga)V sub(As) complex defects in gallium arsenide grown by liquid-encapsulated Czochralski method von Orito, F, Fujii, K, Okada, Y

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The role of diffusion barrier temperature in gallium arsenide crystals grown by the gradient freeze method von Fujii, Katsushi, Orito, Fumio, Fujita, Hisanori, Sato, Tadashige

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Formation and behavior of BGaVAs complex defects in gallium arsenide grown by liquid-encapsulated Czochralski method von ORITO, F, FUJII, K, OKADA, Y

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The role of diffusion barrier temperature in gallium arsenide crystals gown by the gradient freeze method von FUJII, K, ORITO, F, FUJITA, H, SATO, T

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The Effect of Arsenic Vapor Pressure on Site Distribution of Silicon in Gallium Arsenide Grown by the Gradient Freeze Method von Fujii, Koichi, Orito, Fumio, Fujita, H.

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Influence of boron related defects on activation of silicon implanted into undoped semi-insulating GaAs von ORITO, F, KAWABATA, S, YAMADA, Y, OKADA, Y

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Role of boron in electrical properties of semi-insulating GaAs grown by the liquid encapsulated Czochralski method von OSAKA, J, HYUGA, F, KOBAYASHI, T, YAMADA, Y, ORITO, F

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Growth of Chromium-Doped GaAs Single Crystals by the Gradient Freeze Method von Orito, F, Tsujikawa, Y, Tajima, M

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Growth of Cr doped GaAs single crystals by the gradient freeze method von ORITO, F, TSUJIKAWA, Y, TAJIMA, M

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Vertical magnetic field applied LEC apparatus for large diameter GaAs single crystal growth von TERASHIMA, K, KATSUMATA, T, ORITO, F, FUKUDA, T

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Improved uniformity of resistivity distribution in LEC semi-insulating GaAs produced by annealing von OBOKATA, T, MATSUMURA, T, TERASHIMA, K, ORITO, F, KIKUTA, T, FUKUDA, T

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Electrical resistivity of undoped GaAs single crystals grown by magnetic field applied LEC technique von TERASHIMA, K, KATSUMATA, T, ORITA, F, KIKUTA, T, FUKUDA, T

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Effect of magnetic field on residual impurity concentration in LEC GaAs single crystal von TERASHIMA, K, ORITO, F, KATSUMATA, T, FUKUDA, T

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MEASUREMENTS OF COSMIC-RAY PROTON AND HELIUM SPECTRA FROM THE BESS-POLAR LONG-DURATION BALLOON FLIGHTS OVER ANTARCTICA von Abe, K., Fuke, H., Haino, S., Hams, T., Hasegawa, M., Horikoshi, A., Itazaki, A., Kim, K. C., Kumazawa, T., Kusumoto, A., Lee, M. H., Makida, Y., Matsuda, S., Matsukawa, Y., Matsumoto, K., Mitchell, J. W., Myers, Z., Nishimura, J., Nozaki, M., Orito, R., Ormes, J. F., Picot-Clemente, N., Sakai, K., Sasaki, M., Seo, E. S., Shikaze, Y., Shinoda, R., Streitmatter, R. E., Suzuki, J., Takasugi, Y., Takeuchi, K., Tanaka, K., Thakur, N., Yamagami, T., Yamamoto, A., Yoshida, T., Yoshimura, K.

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