Origin of major donor states in In–Ga–Zn oxide von Nakashima, Motoki, Oota, Masashi, Ishihara, Noritaka, Nonaka, Yusuke, Hirohashi, Takuya, Takahashi, Masahiro, Yamazaki, Shunpei, Obonai, Toshimitsu, Hosaka, Yasuharu, Koezuka, Junichi

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Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals von Nonaka, Yusuke, Kurosawa, Yoichi, Komatsu, Yoshihiro, Ishihara, Noritaka, Oota, Masashi, Nakashima, Motoki, Hirohashi, Takuya, Takahashi, Masahiro, Yamazaki, Shunpei, Obonai, Toshimitsu, Hosaka, Yasuharu, Koezuka, Junichi, Yamauchi, Jun

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Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence von Yamazaki, Shunpei, Ohshita, Satoru, Oota, Masashi, Baba, Haruyuki, Onuki, Tatsuya, Kunitake, Hitoshi, Ohshima, Kazuaki, Shimada, Daigo, Kimura, Hajime, Murakawa, Tsutomu, Atsumi, Tomoaki, Kato, Kiyoshi

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P-9: Study of the Origin of Major Donor States in Oxide Semiconductor von Oota, Masashi, Ishihara, Noritaka, Nakashima, Motoki, Kurosawa, Yoichi, Hirohashi, Takuya, Takahashi, Masahiro, Yamazaki, Shunpei, Obonai, Toshimitsu, Hosaka, Yasuharu, Koezuka, Junichi, Kanzaki, Yohsuke, Matsukizono, Hiroshi, Kaneko, Seiji, Matsuo, Takuya

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Proton conducting membranes consisting of poly(vinyl alcohol) and poly(styrene sulfonic acid): Crosslinking of poly(vinyl alcohol) with and without succinic acid von Kudoh, Yasuo, Kojima, Takahiro, Abe, Masahiro, Oota, Masashi, Yamamoto, Takakazu

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Image sensor with In-pixel calculation using crystalline IGZO FET in display von Nakagawa, Takashi, Negoro, Yusuke, Yoneda, Seiichi, Shishido, Hideaki, Kobayashi, Hidetomo, Oota, Masashi, Kawata, Takuya, Ikeda, Takayuki, Yamazaki, Shunpei

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Relationship between crystallinity and device characteristics of In-Sn-Zn oxide von Takasu, Takako, Ishihara, Noritaka, Oota, Masashi, Ishiguro, Yoshimi, Kurosawa, Yoichi, Dairiki, Koji, Yamazaki, Shunpei

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Relationship between crystallinity and device characteristics of In-Sn-Zn oxide: Relationship between crystallinity von Takasu, Takako, Ishihara, Noritaka, Oota, Masashi, Ishiguro, Yoshimi, Kurosawa, Yoichi, Dairiki, Koji, Yamazaki, Shunpei

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P-52: Morphological and Electrical Difference in C-axis Aligned Crystalline IGZO Films Based on the Sputtering Method von Kawata, Takuya, Oota, Masashi, Ishihara, Noritaka, Nakashima, Motoki, Takasu, Takako, Kurosawa, Yoichi, Dairiki, Koji, Tsubuku, Masashi, Yamazaki, Shunpei

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Preparation of new polysulfones with –O–(CH2)3–SO3H side chains von Kojima, Takahiro, Koizumi, Take-aki, Sei, Yoshihisa, Shiozaki, Shiho, Abe, Masahiro, Oota, Masashi, Kishi, Katsuyuki, Naoi, Katsuyoshi, Yamamoto, Takakazu

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P-13: The Relationship Between Crystallinity and Device Characteristics of In-Sn-Zn-Oxide von Nonaka, Yusuke, Takasu, Takako, Ishihara, Noritaka, Oota, Masashi, Ishiguro, Yoshimi, Kurosawa, Yoichi, Dairiki, Koji, Yamazaki, Shunpei

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Preparation of poly(2-pyridone-3,5-diyl)s with –(CH2)4–SO3M (M = H or Na) side chains von Yamamoto, Takakazu, Takei, Tohru, Kumagai, Naoto, Harada, Yosuke, Ohki, Takumi, Kudoh, Yasuo, Kojima, Takahiro, Koizumi, Take-aki, Shiramizu, Kohei, Abe, Masahiro, Oota, Masashi

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Preparation of dibromopyridines having –(CH2)m–SO3Na groups as monomers for new polypyridines von Takei, Tohru, Ohki, Takumi, Harada, Yosuke, Kumagai, Naoto, Fukumoto, Hiroki, Koizumi, Take-aki, Maeda, Akihiro, Kojima, Takahiro, Sei, Yoshihisa, Shiramizu, Kohei, Abe, Masahiro, Oota, Masashi, Yamamoto, Takakazu

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EXPERIMENTAL STUDY ON FUNDAMENTAL CHARACTERISTICS OF UNIAXIAL TENSILE STRENGTH OF SOFTROCKS von NISHIYAMA, Risa, OOTA, Masashi, UNO, Haruhiko, KANAYA, Kensei, TANI, Kazuo

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EXPERIMENTAL STUDY ON FUNDAMENTAL CHARACTERISTICS OF UNIAXIAL TENSILE STRENGTH OF SOFTROCKS von NISHIYAMA, Risa, OOTA, Masashi, UNO, Haruhiko, KANAYA, Kensei, TANI, Kazuo

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A 513-ppi FFS-mode LCD using technique for changing part of active layer of oxide semiconductor to transparent electrode von Yamashita, Akio, Toyotaka, Kouhei, Oota, Masashi, Kubota, Daisuke, Miyake, Hiroyuki, Hirakata, Yoshiharu, Yamazaki, Shunpei, Katayama, Masahiro, Okazaki, Kenichi, Koezuka, Junichi, Matsukizono, Hiroshi, Kanzaki, Yohsuke, Kaneko, Seiji, Ueda, Naoki, Oda, Akihiro, Mori, Shigeyasu, Matsuo, Takuya

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A 513-ppi FFS-mode LCD using technique for changing part of active layer of oxide semiconductor to transparent electrode: A 513-ppi FFS-mode LCD von Yamashita, Akio, Toyotaka, Kouhei, Oota, Masashi, Kubota, Daisuke, Miyake, Hiroyuki, Hirakata, Yoshiharu, Yamazaki, Shunpei, Katayama, Masahiro, Okazaki, Kenichi, Koezuka, Junichi, Matsukizono, Hiroshi, Kanzaki, Yohsuke, Kaneko, Seiji, Ueda, Naoki, Oda, Akihiro, Mori, Shigeyasu, Matsuo, Takuya

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COMPOSITE OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME von YAMAZAKI, Shunpei, NAKAZAWA, Yasutaka, OOTA, Masashi

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METAL OXIDE FILM AND METHOD FOR FORMING METAL OXIDE FILM von TAKAHASHI, Masahiro, TSUBUKU, Masashi, ISHIHARA, Noritaka, OOTA, Masashi, HIROHASHI, Takuya

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Metal oxide film and method for forming metal oxide film von Oota, Masashi, Takahashi, Masahiro, Tsubuku, Masashi, Ishihara, Noritaka, Hirohashi, Takuya

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