Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas von Mori, Masahito, Irie, Shoki, Osano, Yugo, Eriguchi, Koji, Ono, Kouichi

Volltext

Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices von Eriguchi, Koji, Ono, Kouichi

Volltext

Impacts of plasma process-induced damage on MOSFET parameter variability and reliability von Eriguchi, Koji, Ono, Kouichi

Volltext

Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation von Ono, Kouichi, Nakazaki, Nobuya, Tsuda, Hirotaka, Takao, Yoshinori, Eriguchi, Koji

Volltext

Interactions between Plasmas and Nano-interfaces von Ono, Kouichi

Volltext

Three-dimensional particle-in-cell simulation of a miniature plasma source for a microwave discharge ion thruster von Takao, Yoshinori, Koizumi, Hiroyuki, Komurasaki, Kimiya, Eriguchi, Koji, Ono, Kouichi

Volltext

Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas von Mori, Masahito, Osano, Yugo, Irie, Shoki, Eriguchi, Koji, Ono, Kouichi

Volltext

Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products von Nakazaki, Nobuya, Tsuda, Hirotaka, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

Volltext

Origin of plasma-induced surface roughening and ripple formation during plasma etching: The crucial role of ion reflection von Hatsuse, Takumi, Nakazaki, Nobuya, Tsuda, Hirotaka, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

Volltext

Surface smoothing during plasma etching of Si in Cl2 von Nakazaki, Nobuya, Matsumoto, Haruka, Tsuda, Hirotaka, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

Volltext

Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors von Eriguchi, Koji, Matsuda, Asahiko, Takao, Yoshinori, Ono, Kouichi

Volltext

Publisher's Note: “Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals” [J. Appl. Phys. 118, 2... von Nakazaki, Nobuya, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

Volltext

Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals von Nakazaki, Nobuya, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

Volltext

Modeling of ion-bombardment damage on Si surfaces for in-line analysis von Matsuda, Asahiko, Nakakubo, Yoshinori, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

Volltext

An evaluation method of the profile of plasma-induced defects based on capacitance-voltage measurement von Okada, Yukimasa, Ono, Kouichi, Eriguchi, Koji

Volltext

Plasma–surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study von Ono, Kouichi, Ohta, Hiroaki, Eriguchi, Koji

Volltext

Evaluation technique for plasma-induced SiOC dielectric damage by capacitance-voltage hysteresis monitoring von Nishida, Kentaro, Okada, Yukimasa, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

Volltext

Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas von Nakazaki, Nobuya, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

Volltext

Effect of capacitive coupling in a miniature inductively coupled plasma source von Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

Volltext

Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate von Iwai, Takaaki, Eriguchi, Koji, Yamauchi, Shohei, Noro, Naotaka, Kitagawa, Junichi, Ono, Kouichi

Volltext