Interfacial reactions between thin rare-earth-metal oxide films and Si substrates von Ono, Haruhiko, Katsumata, Tooru

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Oxygen precipitates distributed around random grain boundaries in a cast-grown multicrystalline silicon crystal von Uno, Takumi, Sato, Kuniyuki, Ogura, Atsushi, Ono, Haruhiko

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Electrically active light-element complexes in silicon crystals grown by cast method von Sato, Kuniyuki, Ogura, Atsushi, Ono, Haruhiko

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Anharmonic local vibration of carbon in crystalline silicon von Yamada-Kaneta, Hiroshi, Ono Haruhiko

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Formation of Si2N2O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon von Ono, Haruhiko, Motoizumi, Yu, Kusunoki, Hiroki, Sato, Kuniyuki, Tachibana, Tomihisa, Ogura, Atsushi

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Second Harmonic Vibrational Mode of Substitutional Carbon in Cast-Grown Multicrystalline Silicon von Ono, Haruhiko

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Complementary Distribution of NN and NNO Complexes in Cast-Grown Multicrystalline Silicon for Photovoltaic Cells von Kusunoki, Hiroki, Ishizuka, Takahide, Ogura, Atsushi, Ono, Haruhiko

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Microscopic Distributions of Light Elements and Their Precipitates in Multicrystalline Silicon for Solar Cells von Ono, Haruhiko, Ishizuka, Takahide, Kato, Chihiro, Arafune, Koji, Ohshita, Yoshio, Ogura, Atsushi

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Infrared absorption peak due to Ta=O bonds in Ta2O5 thin films von Ono, Haruhiko, Koyanagi, Ken-ichi

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Quantitative Detection of Small Amount of Nitrogen in Czochralski-Grown Silicon Crystals von Ono, Haruhiko, Horikawa, Mitsuhiro

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Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction von Toda, Akio, Ikarashi, Nobuyuki, Ono, Haruhiko

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Infrared studies of transition layers at SiO2/Si interface von Ono, Haruhiko, Ikarashi, Taeko, Ando, Koichi, Kitano, Tomohisa

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Local lattice strain distribution around a transistor channel in metal–oxide–semiconductor devices von Toda, Akio, Ikarashi, Nobuyuki, Ono, Haruhiko, Ito, Shinya, Toda, Takeshi, Imai, Kiyotaka

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In- and out-diffusion of oxygen during the buried-oxide formation in oxygen-implanted silicon von Ono, Haruhiko, Ogura, Atsushi

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Reoxidation effects on the chemical bonding states of nitrogen accumulated at the oxynitride/silicon interface von Miura, Yoshinao, Ono, Haruhiko, Ando, Koichi

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Nitrogen–Oxygen Complexes Associated with Shallow Thermal Donors in Silicon von Ono, Haruhiko

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R-30 Treatment strategies for periodontal regenerative therapy of non-contained intrabony defect utilizing CBCT von Haruhiko Ono

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Effects of thermal annealing on porous silicon photoluminescence dynamics von OOKUBO, N, ONO, H, OCHIAI, Y, MOCHIZUKI, Y, MATSUI, S

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Oxygen Precipitation in Bulk Silicon Crystals Investigated by FTIR von Ono, Haruhiko

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Annealing properties of defects during Si-on-insulator fabrication by low-dose oxygen implantation studied by monoenergetic positron beams von Uedono, Akira, Tanigawa, Shoichiro, Ogura, Atsushi, Ono, Haruhiko, Suzuki, Ryoichi, Ohdaira, Toshiyuki, Mikado, Tomohisa

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