Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors von Chow, T. Paul, Omura, Ichiro, Higashiwaki, Masataka, Kawarada, Hiroshi, Pala, Vipindas

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An experimental study on switching waveform design with gate charge control for power MOSFETs von Oomori, Hirotaka, Omura, Ichiro

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Switching waveform design with gate charge control for power MOSFETs von Oomori, Hirotaka, Omura, Ichiro

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Design and Analysis of a New Evaluation Circuit for Capacitors Used in a High-Power Three-Phase Inverter von Hasegawa, Kazunori, Omura, Ichiro, Nishizawa, Shin-ichi

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Power Semiconductor Devices for Hybrid, Electric, and Fuel Cell Vehicles von Shen, Z. John, Omura, Ichiro

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Multipurpose Strategy for Energy Storage System Based on Capital Asset Pricing Model With Ensemble Approach von Yuasa, Kazufumi, Ueshima, Miki, Babasaki, Tadatoshi, Omura, Ichiro

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Mitigating self-turn-on failures in scaled carrier stored trench IGBT: a focus on poly-Si resistivity von Gollapudi, Srikanth, Omura, Ichiro

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Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs von Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Fukui, Munetoshi, Suzuki, Shinichi, Takeuchi, Kiyoshi, Kakushima, Kuniyuki, Hoshii, Takuya, Tsutsui, Kazuo, Iwai, Hiroshi, Nishizawa, Shin-ichi, Omura, Ichiro, Hiramoto, Toshiro

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Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation von Kono, Hiroshi, Omura, Ichiro

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Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device von Saito, Wataru, Omura, Ichiro, Ogura, Tsuneo, Ohashi, Hiromichi

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Stray inductance influence on switching waveform design with gate charge control for power MOSFETs von Oomori, Hirotaka, Omura, Ichiro

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Altitude dependent failure rate calculation for high power semiconductor devices in aviation electronics von Gollapudi, Srikanth, Omura, Ichiro

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Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs von Takeuchi, Kiyoshi, Fukui, Munetoshi, Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Suzuki, Shinichi, Numasawa, Yohichiroh, Shigyo, Naoyuki, Kakushima, Kuniyuki, Hoshii, Takuya, Furukawa, Kazuyoshi, Watanabe, Masahiro, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Iwai, Hiroshi, Ogura, Atsushi, Saito, Wataru, Nishizawa, Shin-Ichi, Tsukuda, Masanori, Omura, Ichiro, Ohashi, Hiromichi, Hiramoto, Toshiro

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Effect of cell size reduction on the threshold voltage of UMOSFETs von Baba, Yoshiro, Omura, Ichiro

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A Condition-Monitoring Method of DC-Link Capacitors Used in a High-Power Three-Phase PWM Inverter with an Evaluation Circuit von Hasegawa, Kazunori, Nishizawa, Shin-ichi, Omura, Ichiro

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Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs von Saito, W., Noda, T., Kuraguchi, M., Takada, Y., Tsuda, K., Saito, Y., Omura, I., Yamaguchi, M.

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Scaling rule for very shallow trench IGBT toward CMOS process compatibility von Tanaka, M., Omura, I.

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Single-Input Dual-Output Digital Gate Driver IC Automatically Equalizing Drain Current Variations of Two Parallel-Connected SiC MOSFETs von Horii, Kohei, Hata, Katsuhiro, Hayashi, Shin-Ichiro, Wada, Keiji, Omura, Ichiro, Takamiya, Makoto

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General-Purpose Clocked Gate Driver IC With Programmable 63-Level Drivability to Optimize Overshoot and Energy Loss in Switching by a Simulated Annealing Algorithm von Miyazaki, Koutarou, Abe, Seiya, Tsukuda, Masanori, Omura, Ichiro, Wada, Keiji, Takamiya, Makoto, Sakurai, Takayasu

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Parasitic Oscillation Analysis of Trench IGBT During Short-Circuit Type II Using TCAD-Based Signal Flow Graph Model von Kono, Hiroshi, Omura, Ichiro

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