Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing von Bockowski, Michal

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Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching von Yamada, Shinji, Omori, Masato, Sakurai, Hideki, Osada, Yamato, Kamimura, Ryuichiro, Hashizume, Tamotsu, Suda, Jun, Kachi, Tetsu

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Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing von Sakurai, Hideki, Narita, Tetsuo, Omori, Masato, Yamada, Shinji, Koura, Akihiko, Iwinska, Malgorzata, Kataoka, Keita, Horita, Masahiro, Ikarashi, Nobuyuki, Bockowski, Michal, Suda, Jun, Kachi, Tetsu

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Benefits of using the cell block method to determine the discordance of the HR/HER2 expression in patients with metastatic breast cancer von Nakayama, Yuko, Nakagomi, Hiroshi, Omori, Masato, Inoue, Masayuki, Takahashi, Kazunori, Maruyama, Masahiro, Takano, Atsushi, Furuya, Kazushige, Amemiya, Kenji, Ishii, Eri, Oyama, Toshio

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Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing von Akazawa, Masamichi, Kamoshida, Ryo, Murai, Shunta, Narita, Tetsuo, Omori, Masato, Suda, Jun, Kachi, Tetsu

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Determination of Mg acceptor concentration in GaN through photoluminescence von Omori, Masato, Miyazaki, Taisei, Watanabe, Kenta, Shiraishi, Maito, Wada, Ryusei, Okawa, Takashi

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Foundational Study on the Empirical Experiments of ChatGPT in Institutional Research (IR) von Seki, Masayuki, Noda, Ikuhiro, Omori, Masato, Sakai, Tomoyuki, Murakami, Katsuhiko, Takamatsu, Kunihiko

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Characterization of GaN vertical npn phototoransistor von Wada, Ryusui, Shiraishi, Maito, Miyazaki, Taisei, Omori, Masato

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Photoluminescence study on Mg-ion-implanted GaN with ultra-high-pressure annealing von Shiraishi, Maito, Miyazaki, Taisei, Wada, Ryusui, Watanabe, Kenta, Okawa, Takashi, Omori, Masato

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Remote Teaching/Learning at Private Medium-Sized University during COVID-19 Crisis von Takamatsu, Kunihiko, Noda, Ikuhiro, Mizokoshi, Yuji, Bannaka, Kenya, Nakata, Yasuo, Omori, Masato

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Investigation of activation anneal for selective p-GaN layer von Watanabe, Kenta, Iguchi, Hiroko, Shiraishi, Maito, Miyazaki, Taisei, Wada, Ryusui, Omori, Masato, Okawa, Takashi, Nagasato, Yoshitaka

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Control of plasma-induced damage of n-type GaN treated by slope-down-bias ICP-RIE von Yamada, Shinji, Sakurai, Hideki, Omori, Masato, Nakamura, Toshiyuki, Kamimura, Ryuichiro, Suda, Jun, Kachi, Tetsu

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Control of plasma-induced damage of n-type GaN treated by multistep ICP-RIE von Yamada, Shinji, Sakurai, Hideki, Omori, Masato, Suda, Jun, Osada, Yamato, Kamimura, Ryuichiro, Oyobiki, Tatsuya, Hashizume, Tamotsu, Kachi, Tetsu

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CL properties of Mg-ion implanted GaN depending on thermal activation process von Sakurai, Hideki, Yamada, Shinji, Omori, Masato, Furukawa, Yukihiro, Suzuki, Hideo, Suda, Jun, Kachi, Tetsu

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Characterization of inductively coupled plasma reactive ion etching damage for n-type GaN von Yamada, Shinji, Sakurai, Hideki, Omori, Masato, Osada, Yamato, Kamimura, Ryuichiro, Horita, Masahiro, Suda, Jun, Kachi, Tetsu

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A case of port-site implantation in the breast after endoscopic thyroid surgery von KOBAYASHI, Keiko, NAKAGOMI, Hiroshi, FURUYA, Kazushige, OMORI, Masato, HINATA, Michiko, OYAMA, Toshio, KONDOU, Tetsuo

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A New Concept of Data-Driven Education Based on Eduinformatics von Nakata, Yasuo, Bannaka, Kenya, Noda, Ikuhiro, Murakami, Katsuhiko, Kozaki, Yasuhiro, Mitsunari, Kenichiro, Omori, Masato, Takamatsu, Kunihiko

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Comb-shaped outer blade, blade unit, and electric razor von Sone, Daisuke, Ikemoto, Atsutaka, Okura, Shoki, Omori, Masato, Komori, Shunsuke, Shimizu, Hiroaki

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PRESS-MOLDING DEVICE von HAMADA Hideaki, NAOE Hiroyuki, OMORI Masato

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