Complete voltage recovery in quantum dot solar cells due to suppression of electron capture von Varghese, A, Yakimov, M, Tokranov, V, Mitin, V, Sablon, K, Sergeev, A, Oktyabrsky, S

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Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide von Kerr, A J, Chagarov, E, Gu, S, Kaufman-Osborn, T, Madisetti, S, Wu, J, Asbeck, P M, Oktyabrsky, S, Kummel, A C

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Metal-oxide-semiconductor capacitors on GaAs with high- k gate oxide and amorphous silicon interface passivation layer von Koveshnikov, S., Tsai, W., Ok, I., Lee, J. C., Torkanov, V., Yakimov, M., Oktyabrsky, S.

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Ga-In intermixing, intrinsic doping, and Wigner localization in the emission spectra of self-organized InP/GaInP quantum dots von Kapaldo, J, Rouvimov, S, Merz, J L, Oktyabrsky, S, Blundell, S A, Bert, N, Brunkov, P, Kalyuzhnyy, N A, Mintairov, S A, Nekrasov, S, Saly, R, Vlasov, A S, Mintairov, A M

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InGaAs Inversion Layer Mobility and Interface Trap Density From Gated Hall Measurements von Chidambaram, T., Veksler, D., Madisetti, S., Yakimov, M., Tokranov, V., Oktyabrsky, S.

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Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces von Zhernokletov, D. M., Dong, H., Brennan, B., Yakimov, M., Tokranov, V., Oktyabrsky, S., Kim, J., Wallace, R. M.

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Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition von Muth, J. F., Kolbas, R. M., Sharma, A. K., Oktyabrsky, S., Narayan, J.

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Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN von Gu, S., Chagarov, E.A., Min, J., Madisetti, S., Novak, S., Oktyabrsky, S., Kerr, A.J., Kaufman-Osborn, T., Kummel, A.C., Asbeck, P.M.

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AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate von Tokranov, V., Nagaiah, P., Yakimov, M., Matyi, R.J., Oktyabrsky, S.

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All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxides von Tokranov, V., Madisetti, S., Yakimov, M., Nagaiah, P., Faleev, N., Oktyabrsky, S.

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Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3 heterostructures von Narayan, J., Dovidenko, K., Sharma, A. K., Oktyabrsky, S.

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Nanoscale engineering of photoelectron processes in quantum well and dot structures for sensing and energy conversion von Zhang, X, Mitin, V, Sergeev, A, Sablon, K, Yakimov, M, Oktyabrsky, S, Choi, J K, Strasser, G

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High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon von Oktyabrsky, S., Tokranov, V., Yakimov, M., Moore, R., Koveshnikov, S., Tsai, W., Zhu, F., Lee, J.C.

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Optically Decoupled Loss Modulation in a Duo-Cavity VCSEL von van Eisden, J., Yakimov, M., Tokranov, V., Varanasi, M., Mohammed, E.M., Young, I.A., Oktyabrsky, S.R.

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Formation of misfit dislocations in thin film heterostructures von Narayan, J., Oktyabrsky, S.

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Control of Wigner localization and electron cavity effects in near-field emission spectra of In(Ga)P/GaInP quantum-dot structures von Mintairov, A. M., Kapaldo, J., Merz, J. L., Rouvimov, S., Lebedev, D. V., Kalyuzhnyy, N. A., Mintairov, S. A., Belyaev, K. G., Rakhlin, M. V., Toropov, A. A., Brunkov, P. N., Vlasov, A. S., Zadiranov, Yu. M., Blundell, S. A., Mozharov, A. M., Mukhin, I., Yakimov, M., Oktyabrsky, S., Shelaev, A. V., Bykov, V. A.

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Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy von Lebedev, D. V., Kalyuzhnyy, N. A., Mintairov, S. A., Belyaev, K. G., Rakhlin, M. V., Toropov, A. A., Brunkov, P., Vlasov, A. S., Merz, J., Rouvimov, S., Oktyabrsky, S., Yakimov, M., Mukhin, I. V., Shelaev, A. V., Bykov, V. A., Romanova, A. Yu, Buryak, P. A., Mintairov, A. M.

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Enhanced thermal stability of laser diodes with shape-engineered quantum dot medium von Tokranov, V., Yakimov, M., Katsnelson, A., Lamberti, M., Oktyabrsky, S.

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Aluminum nitride films on different orientations of sapphire and silicon von Dovidenko, K., Oktyabrsky, S., Narayan, J., Razeghi, M.

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Nanoindentation and near-field spectroscopy of single semiconductor quantum dots von Mintairov, A. M., Sun, K., Merz, J. L., Li, C., Vlasov, A. S., Vinokurov, D. A., Kovalenkov, O. V., Tokranov, V., Oktyabrsky, S.

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