A new high-density plasma etching system using a dipole-ring magnet von SEKINE, M, NARITA, M, HORIOKA, K, YOSHIDA, Y, OKANO, H

Volltext

Formation of single-crystal Al interconnection by in situ annealing von WADA, J.-I, SUGURO, K, HAYASAKA, N, OKANO, H

Volltext

Self-aligned passivation on copper interconnection durability against oxidizing ambient annealing von ITOW, H, NAKASAKI, Y, MINAMIHABA, G, SUGURO, K, OKANO, H

Volltext

Mechanism of corrosion in Al-Si-Cu von HAYASAKA, N, KOGA, Y, SHIMOMURA, K, YOSHIDA, Y, OKANO, H

Volltext

Gate oxide breakdown phenomena in magnetron plasma von SEKINE, M, HORIOKA, K, YOSHIDA, Y, OKANO, H

Volltext

Thin film deposition by low energy SiCl+n beam von SAKAI, T, SAKAI, A, OKANO, H

Volltext

Mechanism for initial stage of selective tungsten growth employing a WF6 and SiH4 mixture von ITOH, H, KAJI, N, WATANABE, T, OKANO, H

Volltext

SiO2 tapered etching employing magnetron discharge of fluorocarbon gas von OHIWA, T, HORIOKA, K, ARIKADO, T, HASEGAWA, I, OKANO, H

Volltext

Influence of Al surface modification on selectivity in via-hole etching employing CHF3 plasma von OHIWA, T, ARIKADO, T, HORIOKA, K, HASEGAWA, I, MATSUSHITA, T, SHIMOMURA, K, OKANO, H

Volltext

Mechanism for Initial Stage of Selective Tungsten Growth Employing a WF 6 and SiH 4 Mixture von Itoh, Hitoshi, Kaji, Naruhiko, Watanabe, Toru, Haruo Okano, Haruo Okano

Volltext

Resist and sidewall film removal after Al reactive ion etching (RIE) employing F+H2O downstream ashing von JIMBO, S, SHIMOMURA, K, OHIWA, T, SEKINE, M, MORI, H, HORIOKA, K, OKANO, H

Volltext

Highly selective etching of polycrystalline silicon on silicon dioxide at low wafer temperature, employing magnetron plasma von SEKINE, M, HORIOKA, K, ARIKADO, T, OKANO, H

Volltext

Highly selective SiO2 etch employing inductively coupled hydro-fluorocarbon plasma chemistry for self aligned contact etch von IIJIMA, Y, ISHIKAWA, Y, YANG, C.-I, CHANG, M, OKANO, H

Volltext

Photo-excited etching of poly-crystalline and single-crystalline silicon in Cl2 atmosphere von OKANO, H, HORIIKE, Y, SEKINE, M

Volltext

Single silicon etching profile simulation von ARIKADO, T, HORIOKA, K, SEKINE, M, OKANO, H, HORIIKE, Y

Volltext

SiO 2 Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas von Ohiwa, Tokuhisa, Horioka, Keiji, Arikado, Tsunetoshi, Hasegawa, Isahiro, Haruo Okano, Haruo Okano

Volltext

Resist and Sidewall Film Removal after Al Reactive Ion Etching (RIE) Employing F+H 2 O Downstream Ashing von Jimbo, Sadayuki, Shimomura, Kouji, Ohiwa, Tokuhisa, Sekine, Makoto, Mori, Haruki, Keiji Horioka, Keiji Horioka, Haruo Okano, Haruo Okano

Volltext

Influence of Al Surface Modification on Selectivity in Via-Hole Etching Employing CHF 3 Plasma von Ohiwa, Tokuhisa, Arikado, Tsunetoshi, Horioka, Keiji, Hasegawa, Isahiro, Matsushita, Takaya, Kouji Shimomura, Kouji Shimomura, Haruo Okano, Haruo Okano

Volltext

In situ transmission electron microscopy observation of single crystallization of filled aluminum interconnection von WADA, J.-I, TOYODA, H, KANEKO, H, HAYASAKA, N, YASUDA, H, MORI, H, OKANO, H

Volltext

Excimer laser photochemical directional etching of phosphorous doped poly-crystalline silicon von SEKINE, M, OKANO, H, HORIIKE, Y

Volltext