Cryogenic operation of NanoBridge at 4 K for controlling qubit von Okamoto, Koichiro, Tanaka, Takahisa, Miyamura, Makoto, Ishikuro, Hiroki, Uchida, Ken, Sakamoto, Toshitsugu, Tada, Munehiro

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A 65nm Cryogenic CMOS Design and Performance at 4.2K for Quantum State Controller Application von Tada, Munehiro, Okamoto, Koichiro, Tanaka, Takahisa, Miyamura, Makoto, Ishikuro, Hiroki, Uchida, Ken, Sakamoto, Toshitsugu

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Polymer Solid-Electrolyte Switch Embedded on CMOS for Nonvolatile Crossbar Switch von Tada, M., Okamoto, K., Sakamoto, T., Miyamura, M., Banno, N., Hada, H.

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Specific Factors to Predict Large-Vessel Occlusion in Acute Stroke Patients von Inoue, Masato, Noda, Ryuichi, Yamaguchi, Shoji, Tamai, Yuta, Miyahara, Makiko, Yanagisawa, Shunsuke, Okamoto, Koichiro, Hara, Tetsuo, Takeuchi, Sosuke, Miki, Kazunori, Nemoto, Shigeru

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Improved Switching Voltage Variation of Cu Atom Switch for Nonvolatile Programmable Logic von Banno, Naoki, Tada, Munehiro, Sakamoto, Toshitsugu, Okamoto, Koichiro, Miyamura, Makoto, Iguchi, Noriyuki, Hada, Hiromitsu

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28nm Atom-Switch FPGA: Static Timing Analysis and Evaluation von BAI, Xu, NEBASHI, Ryusuke, MIYAMURA, Makoto, FUNAHASHI, Kazunori, BANNO, Naoki, OKAMOTO, Koichiro, NUMATA, Hideaki, IGUCHI, Noriyuki, SUGIBAYASHI, Tadahiko, SAKAMOTO, Toshitsugu, TADA, Munehiro

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Adenoid cystic carcinoma of the orbit without lacrimal gland involvement and with intracranial extension: A case report von Ohkubo, Yu, Okubo, Toshiyuki, Asari, Yusuke, Matsuzaka, Yuki, Kitaguchi, Mayuka, Shiota, Saori, Fujita, Richi, Okamoto, Koichiro, Obata, Hiroto, Kishida, Yukiko, Nagao, Toshitaka

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Electronic Conduction Mechanism in Atom Switch Using Polymer Solid Electrolyte von Sakamoto, T., Tada, M., Okamoto, K., Hada, H.

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NanoBridge-Based FPGA in High-Temperature Environments von Miyamura, Makoto, Sakamoto, Toshitsugu, Xu Bai, Tsuji, Yukihide, Morioka, Ayuka, Nebashi, Ryusuke, Tada, Munehiro, Banno, Naoki, Okamoto, Koichiro, Iguchi, Noriyuki, Hada, Hiromitsu, Sugibayashi, Tadahiko, Nagamatsu, Yuya, Ookubo, Soichi, Shirai, Takuma, Sugai, Fumihito, Inaba, Masayuki

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Area-efficient nonvolatile carry chain based on pass-transistor/atom-switch hybrid logic von Bai, Xu, Tsuji, Yukihide, Sakamoto, Toshitsugu, Morioka, Ayuka, Miyamura, Makoto, Tada, Munehiro, Banno, Naoki, Okamoto, Koichiro, Iguchi, Noriyuki, Hada, Hiromitsu

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Architecture optimization of nanobridge-based field-programmable gate array and its evaluation von Bai, Xu, Sakamoto, Toshitsugu, Tsuji, Yukihide, Miyamura, Makoto, Morioka, Ayuka, Nebashi, Ryusuke, Tada, Munehiro, Banno, Naoki, Okamoto, Koichiro, Iguchi, Noriyuki, Hada, Hiromitsu, Sugibayashi, Tadahiko

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Epitaxial growth of GaN on single-crystal Mo substrates using HfN buffer layers von Okamoto, Koichiro, Inoue, Shigeru, Nakano, Takayuki, Ohta, Jitsuo, Fujioka, Hiroshi

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Improved Resistive Switching Characteristics of NiO Resistance Random-Access Memory Using Post-Plasma-Oxidation Process von Okamoto, Koichiro, Tada, Munehiro, Ito, Kimihiko, Hada, Hiromitsu

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Mechanism of OFF-state lifetime improvement in complementary atom switch von Banno, Naoki, Tada, Munehiro, Sakamoto, Toshitsugu, Miyamura, Makoto, Okamoto, Koichiro, Iguchi, Noriyuki, Nohisa, Tatsuhiko, Hada, Hiromitsu

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Publisher’s Note: “Mechanism of OFF-state lifetime improvement in complementary atom switch” von Banno, Naoki, Tada, Munehiro, Sakamoto, Toshitsugu, Miyamura, Makoto, Okamoto, Koichiro, Iguchi, Noriyuki, Nohisa, Tatsuhiko, Hada, Hiromitsu

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ON-State Reliability of Solid-Electrolyte Switch under Pulsed Alternating Current Stress for Programmable Logic Device von Banno, Naoki, Sakamoto, Toshitsugu, Tada, Munehiro, Miyamura, Makoto, Okamoto, Koichiro, Hada, Hiromitsu, Aono, Masakazu

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Low-power embedded read-only memory using atom switch and silicon-on-thin-buried-oxide transistor von Sakamoto, Toshitsugu, Tada, Munehiro, Tsuji, Yukihide, Makiyama, Hideki, Hasegawa, Takumi, Yamamoto, Yoshiki, Okanishi, Shinobu, Banno, Naoki, Miyamura, Makoto, Okamoto, Koichiro, Iguchi, Noriyuki, Ogasahara, Yasuhiro, Oda, Hidekazu, Kamohara, Shiro, Yamagata, Yasushi, Sugii, Nobuyuki, Hada, Hiromitsu

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Improved Resistive Switching Characteristics of NiO Resistance Random-Access Memory Using Post-Plasma-Oxidation Process von Okamoto, Koichiro, Tada, Munehiro, Ito, Kimihiko, Hada, Hiromitsu

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Programmable cell array using rewritable solid-electrolyte switch integrated in 90nm CMOS von Miyamura, M, Nakaya, S, Tada, M, Sakamoto, T, Okamoto, K, Banno, N, Ishida, S, Ito, K, Hada, H, Sakimura, N, Sugibayashi, T, Motomura, M

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ON-State Reliability of Solid-Electrolyte Switch under Pulsed Alternating Current Stress for Programmable Logic Device von Banno, Naoki, Sakamoto, Toshitsugu, Tada, Munehiro, Miyamura, Makoto, Okamoto, Koichiro, Hada, Hiromitsu, Aono, Masakazu

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