Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs von Hatakeyama, Tetsuo, Hirai, Hirohisa, Sometani, Mitsuru, Okamoto, Dai, Okamoto, Mitsuo, Harada, Shinsuke

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Long-read sequencing identifies the pathogenic nucleotide repeat expansion in RFC1 in a Japanese case of CANVAS von Nakamura, Haruko, Doi, Hiroshi, Mitsuhashi, Satomi, Miyatake, Satoko, Katoh, Kazutaka, Frith, Martin C, Asano, Tetsuya, Kudo, Yosuke, Ikeda, Takuya, Kubota, Shun, Kunii, Misako, Kitazawa, Yu, Tada, Mikiko, Okamoto, Mitsuo, Joki, Hideto, Takeuchi, Hideyuki, Matsumoto, Naomichi, Tanaka, Fumiaki

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Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs von Kobayashi, Takuma, Koyanagi, Kaho, Hirai, Hirohisa, Sometani, Mitsuru, Okamoto, Mitsuo, Watanabe, Heiji

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Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering von Hirai, Hirohisa, Hatakeyama, Tetsuo, Sometani, Mitsuru, Okamoto, Mitsuo, Harada, Shinsuke, Okumura, Hajime, Yamaguchi, Hiroshi

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Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on 11¯00 m-face and 112¯ a-face characterized by Hall effect measurements von Hirai, Hirohisa, Hatakeyama, Tetsuo, Sometani, Mitsuru, Okamoto, Mitsuo, Harada, Shinsuke, Okumura, Hajime

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Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices von Nakanuma, Takato, Kobayashi, Takuma, Hosoi, Takuji, Sometani, Mitsuru, Okamoto, Mitsuo, Yoshigoe, Akitaka, Shimura, Takayoshi, Watanabe, Heiji

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Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors von Hosoi, Takuji, Ohsako, Momoe, Moges, Kidist, Ito, Koji, Kimoto, Tsunenobu, Sometani, Mitsuru, Okamoto, Mitsuo, Yoshigoe, Akitaka, Shimura, Takayoshi, Watanabe, Heiji

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A case report of an individual with Creutzfeldt-Jakob disease characterized by prolonged isolated thalamic lesions and rare MM2-cortical-type pathology von Kunii, Misako, Kishida, Hitaru, Tada, Mikiko, Okamoto, Mitsuo, Asano, Keiichiro, Nakamura, Haruko, Takahashi, Keita, Hashiguchi, Shunta, Kubota, Shun, Okubo, Masaki, Takeuchi, Hideyuki, Ueda, Naohisa, Satoh, Katsuya, Kitamoto, Tetsuyuki, Doi, Hiroshi, Tanaka, Fumiaki

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Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method von Sakata, Hiroki, Okamoto, Dai, Sometani, Mitsuru, Okamoto, Mitsuo, Hirai, Hirohisa, Harada, Shinsuke, Hatakeyama, Tetsuo, Yano, Hiroshi, Iwamuro, Noriyuki

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Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions von Sometani, Mitsuru, Okamoto, Mitsuo, Hatakeyama, Tetsuo, Iwahashi, Yohei, Hayashi, Mariko, Okamoto, Dai, Yano, Hiroshi, Harada, Shinsuke, Yonezawa, Yoshiyuki, Okumura, Hajime

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Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs von Nemoto, Hiroki, Okamoto, Dai, Zhang, Xufang, Sometani, Mitsuru, Okamoto, Mitsuo, Hatakeyama, Tetsuo, Harada, Shinsuke, Iwamuro, Noriyuki, Yano, Hiroshi

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Neural mechanisms of foreign accent syndrome: Lesion and network analysis von Higashiyama, Yuichi, Hamada, Tomoya, Saito, Asami, Morihara, Keisuke, Okamoto, Mitsuo, Kimura, Katsuo, Joki, Hideto, Kishida, Hitaru, Doi, Hiroshi, Ueda, Naohisa, Takeuchi, Hideyuki, Tanaka, Fumiaki

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Anomalous Behavior of Gate Current and TDDB Lifetime by Constant Voltage Stress in NO-Annealed SiC-MOSFETs von Murakami, Eiichi, Okamoto, Mitsuo

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Dynamic characterization of the threshold voltage instability under the pulsed gate bias stress in 4H-SiC MOSFET von Okamoto, Mitsuo, Sometani, Mitsuru, Harada, Shinsuke, Yano, Hiroshi, Okumura, Hajime

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Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs von Kada, Wataru, Hanaizumi, Osamu, Harada, Shinsuke, Abe, Yuta, Ohshima, Takeshi, Umeda, Takahide, Onoda, Shinobu, Haruyama, Moriyoshi, Okamoto, Mitsuo, Kosugi, Ryoji

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Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal--Oxide--Semiconductor Field-Effect Transistors von Okamoto, Mitsuo, Makifuchi, Youichi, Iijima, Miwako, Sakai, Yoshiyuki, Iwamuro, Noriyuki, Kimura, Hiroshi, Fukuda, Kenji, Okumura, Hajime

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Effect of the oxidation process on the electrical characteristics of 4H–SiC p-channel metal-oxide-semiconductor field-effect transistors von Okamoto, Mitsuo, Tanaka, Mieko, Yatsuo, Tsutomu, Fukuda, Kenji

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(Invited) Interface Defects in C-face 4H-SiC MOSFETs: An Electrically-Detected-Magnetic-Resonance Study von Umeda, Takahide, Okamoto, Mitsuo, Yoshioka, Hironori, Kim, Geon Woo, Ma, Shijie, Arai, Ryo, Makino, Takahiro, Ohshima, Takeshi, Harada, Shinsuke

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The K computer Operations: Experiences and Statistics von Yamamoto, Keiji, Uno, Atsuya, Murai, Hitoshi, Tsukamoto, Toshiyuki, Shoji, Fumiyoshi, Matsui, Shuji, Sekizawa, Ryuichi, Sueyasu, Fumichika, Uchiyama, Hiroshi, Okamoto, Mitsuo, Ohgushi, Nobuo, Takashina, Katsutoshi, Wakabayashi, Daisuke, Taguchi, Yuki, Yokokawa, Mitsuo

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3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls von Hirai, Hirohisa, Sometani, Mitsuru, Okamoto, Mitsuo, Harada, Shinsuke

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