Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs von Hatakeyama, Tetsuo, Hirai, Hirohisa, Sometani, Mitsuru, Okamoto, Dai, Okamoto, Mitsuo, Harada, Shinsuke

Volltext

Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation von Okamoto, Dai, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, Takashi

Volltext

Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements von Hatakeyama, Tetsuo, Kiuchi, Yuji, Sometani, Mitsuru, Harada, Shinsuke, Okamoto, Dai, Yano, Hiroshi, Yonezawa, Yoshiyuki, Okumura, Hajime

Volltext

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC von Sometani, Mitsuru, Okamoto, Dai, Harada, Shinsuke, Ishimori, Hitoshi, Takasu, Shinji, Hatakeyama, Tetsuo, Takei, Manabu, Yonezawa, Yoshiyuki, Fukuda, Kenji, Okumura, Hajime

Volltext

Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method von Zhang, Xufang, Matsumoto, Tsubasa, Sakurai, Ukyo, Makino, Toshiharu, Ogura, Masahiko, Yamasaki, Satoshi, Sometani, Mitsuru, Okamoto, Dai, Yano, Hiroshi, Iwamuro, Noriyuki, Inokuma, Takao, Tokuda, Norio

Volltext

Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method von Sakata, Hiroki, Okamoto, Dai, Sometani, Mitsuru, Okamoto, Mitsuo, Hirai, Hirohisa, Harada, Shinsuke, Hatakeyama, Tetsuo, Yano, Hiroshi, Iwamuro, Noriyuki

Volltext

Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface von Sometani, Mitsuru, Nishiya, Yusuke, Kondo, Ren, Inohana, Rei, Zeng, Hongyu, Hirai, Hirohisa, Okamoto, Dai, Matsushita, Yu-ichiro, Umeda, Takahide

Volltext

Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions von Sometani, Mitsuru, Okamoto, Mitsuo, Hatakeyama, Tetsuo, Iwahashi, Yohei, Hayashi, Mariko, Okamoto, Dai, Yano, Hiroshi, Harada, Shinsuke, Yonezawa, Yoshiyuki, Okumura, Hajime

Volltext

Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs von Nemoto, Hiroki, Okamoto, Dai, Zhang, Xufang, Sometani, Mitsuru, Okamoto, Mitsuo, Hatakeyama, Tetsuo, Harada, Shinsuke, Iwamuro, Noriyuki, Yano, Hiroshi

Volltext

Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors von Zhang, Xufang, Okamoto, Dai, Hatakeyama, Tetsuo, Sometani, Mitsuru, Harada, Shinsuke, Iwamuro, Noriyuki, Yano, Hiroshi

Volltext

Characterization of near-interface traps at 4H-SiC metal-oxide-semiconductor interfaces using modified distributed circuit model von Zhang, Xufang, Okamoto, Dai, Hatakeyama, Tetsuo, Sometani, Mitsuru, Harada, Shinsuke, Kosugi, Ryoji, Iwamuro, Noriyuki, Yano, Hiroshi

Volltext

Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors von Karamoto, Yuki, Zhang, Xufang, Okamoto, Dai, Sometani, Mitsuru, Hatakeyama, Tetsuo, Harada, Shinsuke, Iwamuro, Noriyuki, Yano, Hiroshi

Volltext

Investigation of Maximum Junction Temperature for 4H‐SiC MOSFET During Unclamped Inductive Switching Test von AN, JUNJIE, NAMAI, MASAKI, OKAMOTO, DAI, YANO, HIROSHI, TADANO, HIROSHI, IWAMURO, NORIYUKI

Volltext

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs von Fujisawa, Hiroyuki, Shinohe, T., Takei, M., Otsuki, A., Hatakeyama, T., Arai, Masayuki, Takao, K., Takenaka, Kensuke, Asano, K., Harada, Shinsuke, Kumagai, N., Sometani, Mitsuru, Hayashi, T., Deguchi, T., Yoshikawa, M., Nakayama, K., Kato, Tomohisa, Fukuda, K., Izumi, T., Okamoto, Dai, Mizushima, Tomonori, Sakai, Y., Tsutsumi, T., Tanaka, Yasunori, Miyajima, M., Matsunaga, S., Okamoto, M., Yonezawa, Yoshiyuki, Kimura, H., Okumura, H., Kimoto, T.

Volltext

Effect of POCl3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC von Hatayama, Tomoaki, Morishita, Ryuji, Fuyuki, Takashi, Yano, Hiroshi, Okamoto, Dai

Volltext

Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method von Harada, Shinsuke, Takei, Manabu, Sometani, Mitsuru, Okamoto, Dai, Yonezawa, Yoshiyuki, Okumura, Hajime, Fukuda, Kenji, Ishimori, Hitoshi, Takasu, Shinji, Hatakeyama, Tetsuo

Volltext

Analysis of Anomalous Charge-Pumping Characteristics on 4H-SiC MOSFETs von Okamoto, D., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T.

Volltext

Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC von Harada, Shinsuke, Takei, Manabu, Sometani, Mitsuru, Okamoto, Dai, Yonezawa, Yoshiyuki, Okumura, Hajime, Fukuda, Kenji, Ishimori, Hitoshi, Takasu, Shinji, Hatakeyama, Tetsuo

Volltext

Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface von Kotake, Shinya, Hatayama, Tomoaki, Fuyuki, Takashi, Yano, Hiroshi, Okamoto, Dai

Volltext

Improved MOS Interface Properties of C-Face 4H-SiC by POCl3 Annealing von Kotake, Shinya, Hatayama, Tomoaki, Fuyuki, Takashi, Yano, Hiroshi, Okamoto, Dai

Volltext