Characterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor Deposition von Kojima, Kazutoshi, Yoshikawa, Masahito, Itoh, Hisayoshi, Ohshima, Takeshi, Okada, Sohei

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Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs von Kojima, Kazutoshi, Yoshikawa, Masahito, Nashiyama, Isamu, Itoh, Hisayoshi, Ohshima, Takeshi, Okada, Sohei

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IMAGE PROCESSING APPARATUS, IMAGING DEVICE, IMAGE PROCESSING METHOD, AND PROGRAM von OKADA SOHEI

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Observation of Fast Positron Diffraction from a Si(111)7x7 Surface von Kawasuso, Atsuo, Ichimiya, Ayahiko, Maekawa, Masaki, Fukaya, Y., Hayashi, K., Ishimoto, Takuya, Okada, Sohei

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Positron Annihilation Studies of Defects in Ion Implanted Palladium von Komatsu, A., Uchida, H., Kaniava, A., Uedono, Akira, Itoh, Hisayoshi, Okada, Sohei

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Studies of single-event transient current induced in GaAs and Si diodes by energetic heavy ions von Hirao, Toshio, Itoh, Hisayoshi, Okada, Sohei, Nashiyama, Isamu

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Research and Development of High Energy Pulsed Positron Beam von Kawasuso, Atsuo, Maekawa, Masaki, Itoh, Hisayoshi, Okada, Sohei

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Annealing processes of vacancy-type defects in electron-irradiated and as-grown 6 H -SiC studied by positron lifetime spectroscopy von Kawasuso, Atsuo, Itoh, Hisayoshi, Okada, Sohei, Okumura, Hajime

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Development of pulsed MeV positron beam line von Maekawa, Masaki, Kondo, Masakazu, Okada, Sohei, Kawasuso, Atsuo, Itoh, Hisayoshi

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Profiling of collimated swift ion microbeam using 16 M bit DRAM von Mori, Hidenobu, Hirao, Toshio, Onoda, Shinobu, Itoh, Hisayoshi, Okada, Sohei, Okamoto, Tsuyoshi, Koizumi, Yoshiharu

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Reflection High-Energy Positron Diffraction: Solved and Unsolved Problems von Kawasuso, Atsuo, Kojima, Kazutoshi, Yoshikawa, Masahito, Ichimiya, Ayahiko, Itoh, Hisayoshi, Okada, Sohei

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Effect of Electron Irradiation on Properties of CuInSe 2 Thin Films von Tanaka, Tooru, Ohshima, Takeshi, Itoh, Hisayoshi, Okada, Sohei, Wakahara, Akihiro, Yoshida, Akira

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Crystal Growth of 15R-SiC Boules by Sublimation Method von Nishino, Shigehiro, Sasaki, Makato, Nishiguchi, Taro, Harima, Hiroshi, Okada, Sohei

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Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures von Kojima, Kazutoshi, Ishida, Yuuki, Yoshikawa, Masahito, Itoh, Hisayoshi, Ohshima, Takeshi, Okada, Sohei

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Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method von Shimizu, T., Nishino, Shigehiro, Oshima, S., Sasaki, Makato, Nishiguchi, Taro, Okada, Sohei

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Vacancy-Hydrogen Interaction in Proton-Implanted Si Studied by Positron Lifetime and Infrared Absorption Measurements von Kawasuso, Atsuo, Arai, Hiroki, Okada, Sohei

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Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions von Pensl, Gerhard, Yoshikawa, Masahito, Nashiyama, Isamu, Frank, Thomas, Bouwhuis, L., Itoh, Hisayoshi, Kojima, Kazutoshi, Tanigawa, Shoichiro, Uedono, Akira, Ohshima, Takeshi, Okada, Sohei

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Improvement of Resolution of Positron Annihilation Radiation Energy Spectrum Measurement by Data Analysis von OKADA, Sohei, ITO, Yasuo, TABATA, Yoneho

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Positron Annihilation Study of Electron-Irradiated Silicon-Germanium Bulk Alloys von Kawasuso, Atsuo, Honda, T., Yonenaga, Ichiro, Suezawa, Masashi, Okada, Sohei

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PRODUCTION OF MAGNETIC RECORDING MEDIUM von OKADA SOHEI

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