Stress-induced void formation in metallization for integrated circuits von Okabayashi, Hidekazu

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Titanium-containing hydrofluoric acid pretreatment for aluminum chemical vapor deposition von Sugai, Kazumi, Okabayashi, Hidekazu, Kishida, Shunji, Shinzawa, Tsutomu

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Aluminum metallization using a combination of chemical vapor deposition and sputtering von SUGAI, K, KISHIDA, S, SHINZAWA, T, OKABAYASHI, H, YAKO, T, KADOKURA, H, ISEMURA, M, KOBAYASHI, T, HOSOKAWA, N

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Depth-resolved in-situ TEM observation of electromigration in a submicron-wide layered Al-0.5%Cu line von OKABAYASHI, H, KOMATSU, M, MORI, H

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In situ monitoring of Al growth in chemical vapor deposition by detecting reflected laser light intensity von SUGAI, K, OKABAYASHI, H, KOBAYASHI, A, YAKO, T, KISHIDA, S

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A highly stable Al-Si contact to Mo-silicided shallow junctions von NAGASAWA, E, OKABAYASHI, H, IIDA, Y

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Recent progress in refractory-metal silicide formation by ion beam mixing and its applications to VLSL von Okabayashi, Hidekazu

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Stress Migration in Aluminum Interconnects von Okabayashi, Hidekazu

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A Self-Aligned Mo-Silicide Formation von Nagasawa, Eiji, Okabayashi, Hidekazu, Morimoto, Mitsutaka

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Study of migration in LSI Al interconnects by ultrahigh voltage electron microscopy von Okabayashi, Hidekazu

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Planarized via-hole filling with molybdenum by bias sputtering von MOGAMI, T, OKABAYASHI, H, MORIMOTO, M

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Mechanisms of Mo or Mo-silicide/n+-Si ohmic contact degradation induced by high-temperature annealing von HIGUCHI, K, OKABAYASHI, H, KANAMORI, M

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Range and Standard Deviation of Ion-Implanted Phosphorus in Silicon von Okabayashi, Hidekazu, Shinoda, Daizaburo

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Ion Implantation Masking Ability Degradation in High Temperature Annealed Mo Film von Nozaki, Tadatoshi, Okabayashi, Hidekazu, Higuchi, Kohei

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Short-Channel MOSFETs Fabricated Using CW Nd: YAG Laser Annealing of As-Implanted Source and Drain von Yoshida, Masaaki, Okabayashi, Hidekazu, Ishida, Koichi

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Radiation Damage in MOS Devices Underlying an Electron Beam Annealed SOI Structure von Saitoh, Shuichi, Higuchi, Kohei, Okabayashi, Hidekazu

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Degradation Mechanisms on Mo or Mo-silicide/n + -Si Ohmic Contacts on High Temperature Annealing von Higuchi, Kohei, Kanamori, Masaru, Okabayashi, Hidekazu

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1-D model of current distribution and resistance changes for electromigration in layered lines von Grosjean, D.E., Okabayashi, H.

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An analytical open-failure lifetime model for stress-induced voiding in aluminum lines von Okabayashi, H.

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New molecular compound precursor for aluminum chemical vapor deposition von Shinzawa, Tsutomu, Uesugi, Fumihiko, Nishiyama, Iwao, Sugai, Kazumi, Kishida, Shunji, Okabayashi, Hidekazu

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