Influence of image and exchange-correlation effects on electron transport in nanoscale DG MOSFETs von Iwata, H., Matsuda, T., Ohzone, T.

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Orientation dependence and asymmetry of subthreshold characteristics in CMOSFETs von Matsuda, T, Matsumura, Y, Iwata, H, Ohzone, T

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A Test Structure for Spectrum Analysis of Hot-Carrier-Induced Photoemission from Scaled MOSFETs under DC and AC Operation von Matsuda, T., Maezawa, T., Iwata, H., Ohzone, T.

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Numerical solar cell simulation including multiple diffused reflection at the rear surface von Iwata, H., Ohzone, T.

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Numerical analysis of alpha-particle-induced soft errors in SOI MOS devices von Iwata, H., Ohzone, T.

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Electroluminescence of MOS capacitors with Si-implanted SiO2 von Matsuda, T, Nishio, M, Ohzone, T, Hori, H

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A test structure for spectrum analysis of hot-carrier-induced photoemission from MOSFETs von Matsuda, T., Ohzone, T., Odanaka, S., Yamashita, K., Koike, N., Tatsuuma, K.

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Numerical simulation of single event latchup in the temperature range of 77-450 K von Iwata, H., Ohzone, T.

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A test structure to separately analyze CMOSFET reliabilities around center and edge along the channel width von Ohzone, T., Ishii, E., Morishita, T., Komoku, K., Matsuda, T., Iwata, H.

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Two-dimensional intensity distribution of photoluminescence from porous silicon von Matsuda, T., Tanino, K., Ishii, H., Ikeshita, T., Ohzone, T.

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Influence of asymmetric/symmetric source/drain region on asymmetry and mismatch of CMOSFET's and circuit performance von Ohzone, T., Miyakawa, T., Matsuda, T., Yabu, T., Odanaka, S.

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Transient latchup characteristics in n-well CMOS von Ohzone, T., Iwata, J.

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Electrical characteristics of scaled CMOSFET's with source/drain regions fabricated by 7° and 0° tilt-angle implantations von OHZONE, T, YAMAMOTO, M, IWATA, H, ODANAKA, S

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System for virtually sharing customized clothing von Ohzone, Inc

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Two-dimensional spectral distribution of photoluminescence from porous silicon von Matsuda, T., Tanino, K., Shinbo, A., Ishii, H., Ikeshita, T., Ohzone, T.

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A test structure for analysis of temperature distribution in CMOS LSI with sensing device array von Matsuda, T., Hanai, H., Iwata, H., Kondo, D., Hatakeyama, T., Ishizuka, M., Ohzone, T.

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Parasitic current characteristics of a MOSFET with a Si-implanted gate-SiO2 von OHZONE, T, MICHII, A, HORI, T

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Reliability analysis of NAND gates with modified channel length in series n-MOSFETs von Matsuda, T., Tokumitsu, Y., Hanai, H., Iwata, H., Ohzone, T.

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Channel-width measurements of LOCOS- and trench-isolated MOSFET's by photoemission von Ohzone, T., Iwata, H.

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Quantum-Mechanical Simulation of Counter Doped Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Single Work Function Metal Gate von Iwata, Hideyuki, Matsuda, Toshihiro, Ohzone, Takashi

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