Comparison of Genomic and Epigenomic Expression in Monozygotic Twins Discordant for Rett Syndrome von Miyake, Kunio, Yang, Chunshu, Minakuchi, Yohei, Ohori, Kenta, Soutome, Masaki, Hirasawa, Takae, Kazuki, Yasuhiro, Adachi, Noboru, Suzuki, Seiko, Itoh, Masayuki, Goto, Yu-Ichi, Andoh, Tomoko, Kurosawa, Hiroshi, Oshimura, Mitsuo, Sasaki, Masayuki, Toyoda, Atsushi, Kubota, Takeo

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公共施設再編ゲームの開発: 静岡県富士宮市での取り組みを事例として von 大堀, 健太, 志村, 秀明, 鈴木, はるか

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DEVELOPMENT OF REORGANIZING PUBLIC FACILITIES GAME: Case study on Fujinomiya City, in Shizuoka prefecture von OHORI, Kenta, SHIMURA, Hideaki, SUZUKI, Haruka

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Study on considering method of integrated public spaces development and utilization including waterfront and under the elevation: Case report around the Kitajikken river in Sumida... von Ohori, Kenta, Shimura, Hideaki

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DEVELOPMENT OF REORGANIZING PUBLIC FACILITIES GAME: Case study on Fujinomiya City, in Shizuoka prefecture von OHORI, Kenta, SHIMURA, Hideaki, SUZUKI, Haruka

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A search for genomic regions associated with neurodevelopmental differences between Rett syndrome monozygotic twins by genomic and epigenomic comparative assays von Ohori, Kenta, Yang, Chunshu, Miyanari, Yusuke, Sato, Hidenori, Endoh, Kazushi, Emi, Mitsuru, Sasaki, Hiroyuki, Kubota, Takeo

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Comparison of Genomic and Epigenomic Expression in Monozygotic Twins Discordant for Rett Syndrome. e66729 von Miyake, Kunio, Yang, Chunshu, Minakuchi, Yohei, Ohori, Kenta, Soutome, Masaki, Hirasawa, Takae, Kazuki, Yasuhiro, Adachi, Noboru, Suzuki, Seiko, Itoh, Masayuki

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水辺と高架下空間を含む公共空間の一体的整備・活用の検討方法: 東京都墨田区北十間川周辺地区を事例として von 大堀, 健太, 志村, 秀明

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Reaxff MD Analysis of Substrate Material Properties into Oxide Films during Thermal Oxidation Process of Group IV Semiconductor Materials von Sekiguchi, Kenta, Uene, Naoya, Ohori, Daisuke, Endo, Kazuhiko, Tokumasu, Takashi

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Selective atomic layer reaction between GaN and SiN in HBr neutral beam etching von Ohori, Daisuke, Sawada, Takahiro, Sugawara, Kenta, Okada, Masaya, Nakata, Ken, Inoue, Kazutaka, Sato, Daisuke, Samukawa, Seiji

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Atomic-layer etching of GaN by using an HBr neutral beam von Ohori, Daisuke, Sawada, Takahiro, Sugawara, Kenta, Okada, Masaya, Nakata, Ken, Inoue, Kazutaka, Sato, Daisuke, Kurihara, Hideyuki, Samukawa, Seiji

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Reaxff MD Analysis of Substrate Material Properties into Oxide Films during Thermal Oxidation Process of Group IV Semiconductor Materials von Sekiguchi, Kenta, Uene, Naoya, Ohori, Daisuke, Endo, Kazuhiko, Tokumasu, Takashi

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Method of manufacturing semiconductor device von Sugawara, Kenta, Ohori, Daisuke, Samukawa, Seiji

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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE von Sugawara, Kenta, Ohori, Daisuke, Samukawa, Seiji

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Atomic Layer Selective GaN/SiN Etching by HBr Neutral Beam von Sawada, Takahiro, Ohori, Daisuke, Sugawara, Kenta, Okada, Masaya, Nakata, Ken, Inoue, Kazutaka, Sato, Daisuke, Samukawa, Seiji

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Gallium Nitride Atomic Layer Etching by Chlorine Neutral Beam von SUGAWARA, KENTA, OHORI, (P)DAISUKE, INOUE, KAZUTAKA, SAMUKAWA, SEIJI

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Reliability Improvement of GaN HEMT by Chlorine Neutral Beam Etching von Sugawara, Kenta, Okada, Masaya, Ichikawa, Hiroyuki, Inoue, Kazutaka, Ohori, Daisuke, Samukawa, Seiji

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STORAGE BATTERY SYSTEM von ISOZUMI KENTA, OHORI AKIHIRO, KAWAMOTO TETSUHIRO

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Basic Etching Characteristics of GaN by Neutral Beam von Sawada, Takahiro, Ohori, Daisuke, Sugawara, Kenta, Okada, Masaya, Inoue, Kazutaka, Sato, Daisuke, Kurihara, Hideyuki, Samukawa, Seiji

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MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE von SUGAWARA KENTA, SAGAWA SEIJI, OHORI DAISUKE

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