Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method von Sumitani, Hiroaki, Tanaka, Takanori, Tomita, Nobuyuki, Tarutani, Masayoshi, Ohno, Akihito, Toyoda, Yoshihiko, Hamano, Kenichi, Yamakawa, Satoshi, Mitani, Yoichiro, Kuroiwa, Takeharu, Imaizumi, Masayuki

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High-Power 625-nm AlGaInP Laser Diode von Shimada, N., Ohno, A., Abe, S., Miyashita, M., Yagi, T.

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Manufacturing method for silicon carbide epitaxial wafer and manufacturing method for silicon carbide semiconductor device von Ohno, Akihito

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Simultaneous quantitative determination of five opines found in marine invertebrates by high-performance liquid chromatography von KAN-NO, NOBUHIRO, SATO, MINORU, OHNO, AKIHITO, OHYA, GAKU, YOKOYAMA, TAKEHIKO, NAGAHISA, EIZOH

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MANUFACTURING METHOD FOR SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE von OHNO, Akihito

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Investigation of optical properties of InGaN multiple quantum wells on free-standing GaN substrates grown by metalorganic vapor phase epitaxy von Ohno, Akihito, Tomita, Nobuyuki, Yamada, Tomoo, Okagawa, Hiroaki, Takemi, Masayoshi

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Manufacturing method for silicon carbide epitaxial wafer and manufacturing method for silicon carbide semiconductor device von OHNO AKIHITO

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High power 625-nm AlGaInP laser diode von Shimada, N, Ohno, A, Abe, S, Miyashita, M, Yagi, T

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Substrate support and semiconductor manufacturing apparatus von Kawazu Zempei, Ohno Akihito

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Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus von Kanazawa, Takashi, Hamano, Kenichi, Ohno, Akihito

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MANUFACTURING METHOD FOR SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE von OHNO, Akihito

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METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE von OHNO AKIHITO

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Method of manufacturing high resistance nitride buffer layers comprising high carbon impurity concentrations von AKIHITO OHNO

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Substratträger und Halbleiterherstellungsvorrichtung von Kawazu, Zempei, Ohno, Akihito

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SILICON CARBIDE EPITAXIAL WAFER MANUFACTURING METHOD, SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILICON CARBIDE EPITAXIAL WAFER MANUFACTURING APPARATUS von HAMANO, Kenichi, OHNO, Akihito, KANAZAWA, Takashi

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Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus von Kanazawa, Takashi, Hamano, Kenichi, Ohno, Akihito

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High-Efficient and High-Power GaN-Based 405 nm Laser Diodes von KURAMOTO, Kyosuke, OHNO, Akihito, YAMADA, Tomoo, OKAGAWA, Hiroaki, KAWASAKI, Kazushige

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SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus von Hamano, Kenichi, Ohno, Akihito, Mizobe, Takuma, Kimura, Yasuhiro, Mitani, Yoichiro

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SiC-Epitaxiewafer, Verfahren zum Herstellen eines SiC-Epitaxiewafers, SiC-Vorrichtung und Leistungsumwandlungsgerät von Hamano, Kenichi, Ohno, Akihito, Mizobe, Takuma, Kimura, Yasuhiro, Mitani, Yoichiro

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SIC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER, SIC DEVICE, AND POWER CONVERSION APPARATUS von HAMANO, Kenichi, MITANI, Yoichiro, OHNO, Akihito, MIZOBE, Takuma, KIMURA, Yasuhiro

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