Investigation of switching mechanism in HfOx-ReRAM under low power and conventional operation modes von Feng, Wei, Shima, Hisashi, Ohmori, Kenji, Akinaga, Hiroyuki

Volltext

Simultaneous manipulation and observation of multiple ro-vibrational eigenstates in solid para-hydrogen von Katsuki, Hiroyuki, Ohmori, Kenji

Volltext

Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier von Ohmori, Kenji, Amakawa, Shuhei

Volltext

Formalization of Kublai Khan’s globalization using Kunii’s incrementally modular abstraction hierarchy von Ohmori, Kenji

Volltext

Direct White Noise Characterization of Short-Channel MOSFETs von Ohmori, Kenji, Amakawa, Shuhei

Volltext

Theoretical/numerical study on strong-laser-induced interference in the B state of I2 von Ohtsuki, Yukiyoshi, Goto, Haruka, Katsuki, Hiroyuki, Ohmori, Kenji

Volltext

Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure von Sakurai, Yoko, Kakushima, Kuniyuki, Ohmori, Kenji, Yamada, Keisaku, Iwai, Hiroshi, Shiraishi, Kenji, Nomura, Shintaro

Volltext

Similar phenotypes of Girdin germ-line and conditional knockout mice indicate a crucial role for Girdin in the nestin lineage von Asai, Masato, Asai, Naoya, Murata, Ayana, Yokota, Hirofumi, Ohmori, Kenji, Mii, Shinji, Enomoto, Atsushi, Murakumo, Yoshiki, Takahashi, Masahide

Volltext

Electrical characteristics of asymmetrical silicon nanowire field-effect transistors von Sato, Soshi, Kakushima, Kuniyuki, Ohmori, Kenji, Natori, Kenji, Yamada, Keisaku, Iwai, Hiroshi

Volltext

Statistical analysis of relationship between negative-bias temperature instability and random telegraph noise in small p-channel metal-oxide-semiconductor field-effect transistors von Tega, Naoki, Miki, Hiroshi, Mine, Toshiyuki, Ohmori, Kenji, Yamada, Keisaku

Volltext

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors von Sato, Soshi, Kakushima, Kuniyuki, Ahmet, Parhat, Ohmori, Kenji, Natori, Kenji, Yamada, Keisaku, Iwai, Hiroshi

Volltext

Si nanowire FET and its modeling von Iwai, Hiroshi, Natori, Kenji, Shiraishi, Kenji, Iwata, Jun-ichi, Oshiyama, Atsushi, Yamada, Keisaku, Ohmori, Kenji, Kakushima, Kuniyuki, Ahmet, Parhat

Volltext

Differential regulation of IL-4 expression and degranulation by anti-allergic olopatadine in rat basophilic leukemia (RBL-2H3) cells von Matsubara, Masahiro, Masaki, Shigehiro, Ohmori, Kenji, Karasawa, Akira, Hasegawa, Kazuhide

Volltext

Optically Engineered Quantum States in Ultrafast and Ultracold Systems von Ohmori, Kenji

Volltext

Generation of 480 nm picosecond pulses for ultrafast excitation of Rydberg atoms von T P, MAHESH, Matsubara, Takuya, Chew, Yeelai, Tomita, Takafumi, DE LESELEUC, Sylvain, Ohmori, Kenji

Volltext

Experimental Characterization of Quasi-Fermi Potential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry von Sato, Soshi, Ohmori, Kenji, Kakushima, Kuniyuki, Ahmet, Parhat, Natori, Kenji, Yamada, Keisaku, Iwai, Hiroshi

Volltext

Ultrafast Coherent Control of Condensed Matter with Attosecond Precision von Katsuki, Hiroyuki, Takei, Nobuyuki, Sommer, Christian, Ohmori, Kenji

Volltext

Advantages of Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties von Feng, Wei, Hettiarachchi, Ranga, Sato, Soshi, Kakushima, Kuniyuki, Niwa, Masaaki, Iwai, Hiroshi, Yamada, Keisaku, Ohmori, Kenji

Volltext

Behavior of Low-Frequency Noise in n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors for Different Impurity Concentrations von Hettiarachchi, Ranga, Matsuki, Takeo, Feng, Wei, Yamada, Keisaku, Ohmori, Kenji

Volltext

Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations von Hettiarachchi, Ranga, Matsuki, Takeo, Feng, Wei, Yamada, Keisaku, Ohmori, Kenji

Volltext