Gas-phase kinetics in atmospheric-pressure plasma-enhanced chemical vapor deposition of silicon films von Kakiuchi, Hiroaki, Ohmi, Hiromasa, Yasutake, Kiyoshi

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Plasma parameters in very high frequency argon plasmas mixed with nitrogen at atmospheric pressure von Yasutake, Kiyoshi, Yoshida, Kazushi, Ohmi, Hiromasa, Kakiuchi, Hiroaki

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Pulsed very high-frequency plasma-enhanced chemical vapor deposition of silicon films for low-temperature (120 °C) thin film transistors von Kakiuchi, Hiroaki, Ohmi, Hiromasa, Yasutake, Kiyoshi

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Si nanocone structure fabricated by a relatively high-pressure hydrogen plasma in the range of 3.3–27 kPa von Nomura, Toshimitsu, Kimoto, Kenta, Kakiuchi, Hiroaki, Yasutake, Kiyoshi, Ohmi, Hiromasa

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Plasma parameters in very high frequency helium and argon plasmas at atmospheric pressure von Yoshida, Kazushi, Nitta, Ken, Ohmi, Hiromasa, Yasutake, Kiyoshi, Kakiuchi, Hiroaki

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Formation of indium nitride nanostructures by atmospheric pressure plasma nitridation of molten indium von Yoshida, Kazushi, Ohmi, Hiromasa, Yasutake, Kiyoshi, Kakiuchi, Hiroaki

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Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma von Kakiuchi, Hiroaki, Ohmi, Hiromasa, Yasutake, Kiyoshi

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Atmospheric-pressure low-temperature plasma processes for thin film deposition von Kakiuchi, Hiroaki, Ohmi, Hiromasa, Yasutake, Kiyoshi

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Determination of plasma impedance of microwave plasma system by electric field simulation von Shuto, Mitsutoshi, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yamada, Takahiro, Yasutake, Kiyoshi

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Organosilicon-Based Thin Film Formation in Very High-Frequency Plasma Under Atmospheric Pressure von Hamzens, Afif, Kitamura, Kento, Mochizuki, Shota, Uon, Leapheng, Ohmi, Hiromasa, Kakiuchi, Hiroaki

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Study on silicon removal property and surface smoothing phenomenon by moderate-pressure microwave hydrogen plasma von Ohmi, Hiromasa, Kimoto, Kenta, Nomura, Toshimitsu, Kakiuchi, Hiroaki, Yasutake, Kiyoshi

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Hydrogen atom density in narrow-gap microwave hydrogen plasma determined by calorimetry von Yamada, Takahiro, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi

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Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma von Ohmi, Hiromasa, Funaki, Takeshi, Kakiuchi, Hiroaki, Yasutake, Kiyoshi

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Diffusion of excessively adsorbed hydrogen atoms on hydrogen terminated Si(100)(2×1) surface von Inagaki, Kouji, Morikawa, Yoshitada, Ohmi, Hiromasa, Yasutake, Kiyoshi, Kakiuchi, Hiroaki

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Magnesium hydride film formation using subatmospheric pressure H2 plasma at low temperature von Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi

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Copper dry etching by sub-atmospheric-pressure pure hydrogen glow plasma von Ohmi, Hiromasa, Sato, Jumpei, Hirano, Tatsuya, Kubota, Yusuke, Kakiuchi, Hiroaki, Yasutake, Kiyoshi

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Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma von Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi

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Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma von Ohmi, Hiromasa, Kakiuchi, Hiroaki, Hamaoka, Yoshinori, Yasutake, Kiyoshi

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Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition von Ohmi, Hiromasa, Sato, Jumpei, Shirasu, Yoshiki, Hirano, Tatsuya, Kakiuchi, Hiroaki, Yasutake, Kiyoshi

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High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma von Nomura, Toshimitsu, Kakiuchi, Hiroaki, Ohmi, Hiromasa

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