Alloying of CdSe/ZnSe quantum dot grown by an alternate molecular beam supply von Ohishi, Masakazu, Tanaka, Katsuya, Fujimoto, Tomohiro, Yoneta, Minoru, Saito, Hiroshi

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Growth and luminescence of ZnxMg1−xS:Mn ternary compound crystal films von Inoue, Ryo, Kitagawa, Masahiko, Nishigaki, Takayoshi, Morita, Daisuke, Ichino, Kunio, Kobayashi, Hiroshi, Ohishi, Masakazu, Saito, Hiroshi

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Growth Interruption Effect on the Formation of CdSe/ZnSe Quantum Dots von Ohishi, Masakazu, Saito, Hiroshi, Yoneta, Minoru, Ichikawa, Takaaki, Fujimoto, Tomohiro

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Time-Resolved Studies on Recombination Luminescence of Donor-Acceptor Pairs in ZnSe von Ohishi, Masakazu

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Molecular beam epitaxial growth of ZnCrO films by using RF plasma source von Yoneta, Minoru, Satou, Yuichi, Shintani, Motoyuki, Ii, Masakazu, Yoshino, Kenji, Honda, Makoto, Ohishi, Masakazu

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Low temperature growth of ZnSe/GaAs using hot molecular beams von Ohishi, Masakazu, Saito, Hiroshi, Yoneta, Minoru, Fujisaki, Yasunori

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MBE growth of GaN and AlN using ammonia cluster ion beam - Dependence on cluster energy and growth temperature von Saito, Hiroshi, Nakagawa, Shun-ichiro, Ohishi, Masakazu, Imai, Kazuaki

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Annealing effects of a high-quality ZnTe substrate von YOSHINO, Kenji, YONETA, Minoru, OHMORI, Kenzo, SAITO, Hiroshi, OHISHI, Masakazu, YABE, Takayuki

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Generation and evaluation of post-heated zinc and selenium molecular beams von YONETA, M, OHISHI, M, SAITO, H, HAMASAKI, T

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Ultraviolet irradiation effect on the MBE growth of ZnSe/GaAs observed by RHEED von Ohishi, Masakazu, Saito, Hiroshi, Torihara, Hiroshi, Fujisaki, Yasunori, Ohmori, Kenzo

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Molecular beam epitaxially grown ZnSe(001) surface studied by the In situ observation of RHEED intensity von OHISHI, M, SAITO, H, TORIHARA, H, FUJISAKI, Y, OHMORI, K

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Low temperature growth of ZnSe/GaAs using post-heated molecular beams von OHISHI, M, SAITO, H, FUJISAKI, Y, TORIHARA, H, ABLET, I

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Effect of residual strain on the splitting of excitonic luminescence lines in epitaxially grown ZnSe/GaAs von OHISHI, M, SAITO, H, FUJIWARA, J.-I, OHMORI, K

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Thermal stability of Li-related 1D defects in ZnSe:Li/GaAs grown by MBE von Yoneta, Minoru, Ohishi, Masakazu, Saito, Hiroshi

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Molecular beam epitaxy of wurtzite CdSe on GaAs{1 1 1} substrates von Ohishi, Masakazu, Yoneta, Minoru, Saito, Hiroshi, Sawada, Hironobu, Mori, Souta

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Anomaly in growth rate of Cl-doped ZnSe layer grown by molecular beam epitaxy von Yoneta, Minoru, Ohishi, Masakazu, Saito, Hiroshi, Hayashi, Manabu, Uechi, Hideo

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Excitation spectroscopy of donor-acceptor pair luminescence in ZnSexS1− x von Ohishi, Masakazu, Hiramatsu, Makoto, Ohmori, Kenzo, Saito, Hiroshi, Tiong, Shirley R.

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Step density dependence of acceptor concentration in Li-doped ZnSe grown on misoriented GaAs(0 0 1) von Yoneta, Minoru, Ohishi, Masakazu, Saito, Hiroshi, Jinnai, Nobuki, Ohno, Tetsuhiro

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Growth and characterization of codoping of ZnSe : Cl with Li grown by molecular beam epitaxy on GaAs von Yoneta, Minoru, Uechi, Hideo, Nanami, Kouta, Ohishi, Masakazu, Saito, Hiroshi, Yoshino, Kenji, Ohmori, Kenzo

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Low temperature molecular beam epitaxial growth of ZnS/GaAs(001) by using elemental sulfur source von Yoneta, Minoru, Ohishi, Masakazu, Saito, Hiroshi, Hamasaki, Tetsuya

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