In situ synthesis of TiH2 layer on metallic titanium foil through gaseous hydrogen free acid-hydrothermal method von Ren, Na, Wang, Guancong, Liu, Hong, Ohachi, Tadashi

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A new theoretical approach to adsorption-desorption behavior of Ga on GaAs surfaces von KANGAWA, Y, ITO, T, TAGUCHI, A, SHIRAISHI, K, OHACHI, T

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Ammonium sulfate regulation of morphology of Nd:Y2O3 precursor via urea precipitation method and its effect on the sintering properties of Nd:Y2O3 nanopowders von Qin, Haiming, Liu, Hong, Sang, Yuanhua, Lv, Yaohui, Zhang, Xiaolin, Zhang, Yuanyuan, Ohachi, Tadashi, Wang, Jiyang

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Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates von Ohachi, T., Yamabe, N., Shimomura, H., Shimamura, T., Ariyada, O., Wada, M.

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Interface roughness of double buffer layer of GaN film grown on Si(111) substrate using GIXR analysis von Yamamoto, Y., Yamabe, N., Ohachi, T.

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Basic Theory of Epitaxy: Step Dynamics and Thermodynamics von Ohachi, Tadashi

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Antisite defect elimination through Mg doping in stoichiometric lithium tantalate powder synthesized via a wet-chemical spray-drying method von Sun, Dehui, Kang, Xueliang, Yu, Qian, Cui, Kun, Qin, Xiaoyong, Shi, Xuxia, Cai, Huaqiang, Ohachi, Tadashi, Sang, Yuanhua, Liu, Hong

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Theoretical approach to influence of As2 pressure on GaAs growth kinetics von Kangawa, Y., Ito, T., Hiraoka, Y.S., Taguchi, A., Shiraishi, K., Ohachi, T.

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In situ synthesis of TiH{sub 2} layer on metallic titanium foil through gaseous hydrogen free acid-hydrothermal method von Ren, Na, Wang, Guancong, Liu, Hong, Ohachi, Tadashi

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Nitridation of Si(1 1 1) for growth of 2H-AlN(0 0 0 1)/β-Si3N4 /Si(1 1 1) structure von Yamabe, N., Shimomura, H., Shimamura, T., Ohachi, T.

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Control of active nitrogen species used for PA-MBE growth of group III nitrides on Si von Ohachi, Tadashi, Yamabe, Nobuhiko, Yamamoto, Yuka, Wada, Motoi, Ariyada, Osamu

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Professor Tatau Nishinaga, Honorary Member and the 4th President of JACG, Receives the Order of the Sacred Treasure, Gold and Silver Star(Community News,News of JACG) von Ohachi, Tadashi

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Epitaxial growth of β-Si3N4 by the nitridation of Si with adsorbed N atoms for interface reaction epitaxy of double buffer AlN(0001)/β-Si3N4/Si(111) von Yamabe, Nobuhiko, Yamamoto, Yuka, Ohachi, Tadashi

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Electronic structure and diffusion paths of Ag ions in rocksalt structured AgI von Ono, S., Kobayashi, M., Kashida, S., Ohachi, T.

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Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(0 0 1) von Kangawa, Y., Ito, T., Taguchi, A., Shiraishi, K., Irisawa, T., Ohachi, T.

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In Memory of Prof. Ichiro Sunagawa(<Special Issue>The Memory of The Late Professor Ichiro Sunagawa) von Ohachi, Tadashi

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Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux von Ohachi, Tadashi, Yamabe, Nobuhiko, Wada, Motoi, Ariyada, Osamu

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Spray drying mass-production route for Mg-doped LiNbO3 (Mg:LN) polycrystalline powder based on a wet-chemical method von Liu, Qingbo, Sun, Dehui, Yan, Tao, Zheng, Feifei, Sang, Yunhua, Liu, Hong, Wang, Jiyang, Ohachi, Tadashi

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Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux von Ohachi, Tadashi, Yamabe, Nobuhiko, Wada, Motoi, Ariyada, Osamu

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Role of excited nitrogen species in the growth of GaN by RF–MBE von Kikuchi, T., Somintac, A.S., Ariyada, O., Wada, M., Ohachi, T.

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