Investigation of leakage current paths in n-GaN by conductive atomic force microscopy von Kim, Bumho, Moon, Daeyoung, Joo, Kisu, Oh, Sewoung, Lee, Young Kuk, Park, Yongjo, Nanishi, Yasushi, Yoon, Euijoon

Volltext

Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics von Yang, Changjae, Lee, Sangsoo, Wook Shin, Keun, Oh, Sewoung, Park, Jinsub, Kim, Chang-Zoo, Park, Won-Kyu, Ha, Seung-kyu, Jun Choi, Won, Yoon, Euijoon

Volltext

Control of Crack Formation for the Fabrication of Crack-Free and Self-Isolated High-Efficiency Gallium Arsenide Photovoltaic Cells on Silicon Substrate von Oh, Sewoung, Jun, Dong Hwan, Shin, Keun Wook, Choi, InHye, Jung, Sang Hyun, Choi, JeHyuk, Park, Wonkyu, Park, Yongjo, Yoon, Euijoon

Volltext

Reduction in threading dislocation density in ge epitaxial layers grown on Si(001) substrates by using rapid thermal annealing von Shin, Keun Wook, Park, Sung Hyun, Park, Sehun, Yoon, Euijoon, Oh, Sewoung, Park, Yongjo

Volltext

Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence von Yang, Changjae, Lee, Sangsoo, Shin, Keun-Wook, Oh, Sewoung, Moon, Daeyoung, Kim, Sung-Dae, Kim, Young-Woon, Kim, Chang-Zoo, Park, Won-kyu, Choi, Won Jun, Park, Jinsub, Yoon, Euijoon

Volltext

METHOD FOR SEPARATING EPITAXIAL LAYER BY USING CRACK PATTERN von SHIN, Chan Soo, PARK, Won Kyu, LEE, Tae Young, CHOI, Je Hyuk, OH, Sewoung, LEE, Gyu Beom

Volltext bestellen