Design of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics von Yoon, Hyowon, Seok, Ogyun

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High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2 von WOOJIN CHOI, OGYUN SEOK, HOJIN RYU, CHA, Ho-Young, SEO, Kwang-Seok

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Effects of incomplete ionization on forward current–voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation von Seok, Ogyun, Ha, Min-Woo

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Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation von Kim, Chaeyun, Yoon, Hyowon, Kim, Dong-Seok, Seok, Ogyun

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Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide von Park, Yeongeun, Yoon, Hyowon, Kim, Chaeyun, Kim, Gwangjae, Kang, Gyuhyeok, Seok, Ogyun, Ha, Min-Woo

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Multi-floating-zone JTE for 4.5 kV SiC power devices with exponentially modulated dimensions von Ha, Min-Woo, Seok, Ogyun

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Chip packaging interaction of SiC junction barrier Schottky diode packages von Zhang, Sung-Uk, Seok, Ogyun

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1.2 kV SiC MOSFETs with tapered buffer oxide for the suppression of the electric field crowding effect von Yoon, Hyowon, Kim, Jinhun, Kim, Sangyeob, Kim, Chaeyun, Park, Yeongeun, Kwon, Soontak, Song, Jaejin, Lee, Jeongyun, Ha, Min-Woo, Seok, Ogyun

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The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation von Kim, Chaeyun, Yoon, Hyowon, Park, Yeongeun, Kim, Sangyeob, Kang, Gyuhyeok, Kim, Dong-Seok, Seok, Ogyun

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Effect of P+ Source Pattern in 4H-SiC Trench-Gate MOSFETs on Low Specific On-Resistance von Jeong, Jee-Hun, Jang, Min-Seok, Seok, Ogyun, Lee, Ho-Jun

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Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling von Jeong, Jee-Hun, Seok, Ogyun, Lee, Ho-Jun

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Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer von Kim, Hyoung Woo, Seok, Ogyun, Moon, Jeong Hyun, Bahng, Wook, Jo, Jungyol

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Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes von Ha, Min-Woo, Seok, Ogyun, Lee, Hojun, Lee, Hyun Ho

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High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators von Seok, Ogyun, Ahn, Woojin, Han, Min-Koo, Ha, Min-Woo

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Effects of junction profiles in bottom protection p-well on electrical characteristics of 1.2 kV SiC trench-gate MOSFETs von Seok, Ogyun, Kim, Hyoung Woo, Kang, In Ho, Ha, Min-Woo, Bahng, Wook

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Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well von Seok, Ogyun, Ha, Min-Woo, Kang, In Ho, Kim, Hyoung Woo, Kim, Dong Young, Bahng, Wook

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Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers von Kim, Sangyeob, Seok, Ogyun

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6.5 kV SiC Power Devices with Improved Blocking Characteristics against Process Deviations von Jung, Junki, Seok, Ogyun, Kang, In Ho, Kim, Hyoung Woo, Bahng, Wook, Lee, Ho-Jun

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High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealing von Ahn, Woojin, Seok, Ogyun, Song, Seung Min, Han, Min-Koo, Ha, Min-Woo

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(Invited) SiC Lateral MOSFETs Implemented on Semi-Insulating Substrate von Kim, Hyoung Woo, Seok, Ogyun, Moon, Jeong Hyun, Bahng, Wook, Jo, Jungyol

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