N-type control of single-crystal diamond films by ultra-lightly phosphorus doping von Kato, Hiromitsu, Ogura, Masahiko, Makino, Toshiharu, Takeuchi, Daisuke, Yamasaki, Satoshi

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Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond von Hiraiwa, Atsushi, Okubo, Satoshi, Ogura, Masahiko, Fu, Yu, Kawarada, Hiroshi

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Direct Nanoscale Sensing of the Internal Electric Field in Operating Semiconductor Devices Using Single Electron Spins von Iwasaki, Takayuki, Naruki, Wataru, Tahara, Kosuke, Makino, Toshiharu, Kato, Hiromitsu, Ogura, Masahiko, Takeuchi, Daisuke, Yamasaki, Satoshi, Hatano, Mutsuko

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Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations von Matsumoto, Tsubasa, Kato, Hiromitsu, Makino, Toshiharu, Ogura, Masahiko, Takeuchi, Daisuke, Yamasaki, Satoshi, Inokuma, Takao, Tokuda, Norio

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Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body von Matsumoto, Tsubasa, Yamakawa, Tomoya, Kato, Hiromitsu, Makino, Toshiharu, Ogura, Masahiko, Zhang, Xufang, Inokuma, Takao, Yamasaki, Satoshi, Tokuda, Norio

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Microstructures of dome-shaped hillocks formed on B doped CVD homoepitaxial diamond films von Tsubouchi, Nobuteru, Ogura, Masahiko, Makino, Toshiharu

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Insight into Al2O3/B-doped diamond interface states with high-temperature conductance method von Zhang, Xufang, Matsumoto, Tsubasa, Sakurai, Ukyo, Makino, Toshiharu, Ogura, Masahiko, Sometani, Mitsuru, Yamasaki, Satoshi, Nebel, Christoph E., Inokuma, Takao, Tokuda, Norio

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Lifetime and migration length of B-related admolecules on diamond {100}-surface: Comparative study of hot-filament and microwave plasma-enhanced chemical vapor deposition von Ohmagari, Shinya, Ogura, Masahiko, Umezawa, Hitoshi, Mokuno, Yoshiaki

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Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method von Zhang, Xufang, Matsumoto, Tsubasa, Sakurai, Ukyo, Makino, Toshiharu, Ogura, Masahiko, Yamasaki, Satoshi, Sometani, Mitsuru, Okamoto, Dai, Yano, Hiroshi, Iwamuro, Noriyuki, Inokuma, Takao, Tokuda, Norio

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n-type diamond synthesized with tert-butylphosphine for long spin coherence times of perfectly aligned NV centers von Kawase, Riku, Kawashima, Hiroyuki, Kato, Hiromitsu, Tokuda, Norio, Yamasaki, Satoshi, Ogura, Masahiko, Makino, Toshiharu, Mizuochi, Norikazu

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Impact of water vapor annealing treatments on Al2O3/diamond interface von Zhang, Xufang, Matsumoto, Tsubasa, Sometani, Mitsuru, Ogura, Masahiko, Kato, Hiromitsu, Makino, Toshiharu, Takeuchi, Daisuke, Inokuma, Takao, Yamasaki, Satoshi, Tokuda, Norio

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Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001) von Kono, Shozo, Kageura, Taisuke, Hayashi, Yuya, Ri, Sung-Gi, Teraji, Tokuyuki, Takeuchi, Daisuke, Ogura, Masahiko, Kodama, Hideyuki, Sawabe, Atsuhito, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi

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Characterization of Schottky Barrier Diodes on Heteroepitaxial Diamond on 3C-SiC/Si Substrates von Murooka, Takuya, Hatano, Mutsuko, Yaita, Junya, Makino, Toshiharu, Ogura, Masahiko, Kato, Hiromitsu, Yamasaki, Satoshi, Natal, Meralys, Saddow, Stephen E., Iwasaki, Takayuki

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Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures von Nakajima, Akira, Liu, Pucheng, Ogura, Masahiko, Makino, Toshiharu, Kakushima, Kuniyuki, Nishizawa, Shin-ichi, Ohashi, Hiromichi, Yamasaki, Satoshi, Iwai, Hiroshi

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Single crystal diamond membranes for nanoelectronics von Bray, Kerem, Kato, Hiromitsu, Previdi, Rodolfo, Sandstrom, Russell, Ganesan, Kumaravelu, Ogura, Masahiko, Makino, Toshiharu, Yamasaki, Satoshi, Magyar, Andrew P, Toth, Milos, Aharonovich, Igor

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Fabrication of graphene on atomically flat diamond (111) surfaces using nickel as a catalyst von Kanada, Shohei, Nagai, Masatsugu, Ito, Shinya, Matsumoto, Tsubasa, Ogura, Masahiko, Takeuchi, Daisuke, Yamasaki, Satoshi, Inokuma, Takao, Tokuda, Norio

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Influence of substrate misorientation on the surface morphology of homoepitaxial diamond (111) films von Tokuda, Norio, Ogura, Masahiko, Matsumoto, Tsubasa, Yamasaki, Satoshi, Inokuma, Takao

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Electrical characterization of diamond PiN diodes for high voltage applications von Suzuki, Mariko, Sakai, Tadashi, Makino, Toshiharu, Kato, Hiromitsu, Takeuchi, Daisuke, Ogura, Masahiko, Okushi, Hideyo, Yamasaki, Satoshi

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Vector Electrometry in a Wide-Gap-Semiconductor Device Using a Spin-Ensemble Quantum Sensor von Yang, Bang, Murooka, Takuya, Mizuno, Kosuke, Kim, Kwangsoo, Kato, Hiromitsu, Makino, Toshiharu, Ogura, Masahiko, Yamasaki, Satoshi, Schmidt, Marek E., Mizuta, Hiroshi, Yacoby, Amir, Hatano, Mutsuko, Iwasaki, Takayuki

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Estimation of Inductively Coupled Plasma Etching Damage of Boron‐Doped Diamond Using X‐Ray Photoelectron Spectroscopy von Kato, Yukako, Kawashima, Hiroyuki, Makino, Toshiharu, Ogura, Masahiko, Traoré, Aboulaye, Ozawa, Naoto, Yamasaki, Satoshi

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