Effect of 3C-SiC irradiation with 8 MeV protons von Lebedev, A. A., Ber, B. Ya, Oganesyan, G. A., Belov, S. V., Seredova, N. V., Nikitina, I. P., Lebedev, S. P., Shakhov, L. V., Kozlovski, V. V.

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Electrical Properties of Defects in Ga-Doped Ge Irradiated with Fast Electrons and Protons von Kozlovski, Vitalii V., Emtsev, Vadim V., Oganesyan, Gagik A., Abrosimov, Nikolay V.

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Similarity of Atomic Configurations of Thermally Stable Positron-Sensitive Complexes Produced with 0.9-MeV Electrons and 15-MeV Protons in n–FZ–Si:P Crystals von Krause-Rehberg, Reinhard, Emtsev, Vadim V., Oganesyan, Gagik A., Arutyunov, Nikolai Yu, Elsayed, M., Kozlovski, Vitalii V.

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Influence of the defect density (twins boundaries) on electrical parameters of 3C-SiC epitaxial films von Lebedev, Alexander A., Abramov, Pavel L., Lebedev, Sergey P., Oganesyan, Gagik A., Tregubova, Alla S., Shamshur, Dmitrii V.

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P-6H-SiC Conductivity Compensation after Irradiation of 8MeV Protons von Oganesyan, Gagik A., Lebedev, Alexander A., Kozlovski, Vitalii V., Bogdanova, Elena V., Belov, Sergey V.

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Spin-dependent transport of holes in silicon quantum wells confined by superconductor barriers von Bagraev, Nikolay T., Gehlhoff, Wolfgang, Klyachkin, Leonid E., Kudryavtsev, Andrey A., Malyarenko, Anna M., Oganesyan, Gagik A., Poloskin, Dmitrii S., Romanov, Vladimir V.

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Current-voltage characteristics and DLTS spectra of high voltage SiC Schottky diodes irradiated with electrons at high temperatures von Levinshtein, Michael E., Lebedev, Alexander A., Kozlovski, Vitali V., Malevsky, Dmitriy A., Kuzmin, Roman A., Oganesyan, Gagik A.

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Production and Annealing of Defects in Proton-Irradiated n-Ge von Kozlovski, Vitalii V., Oganesyan, Gagik A., Emtsev, Vadim V., Abrosimov, Nikolay V.

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Positron Probing of Vacancy Volume of Thermally Stable Deep Donors Produced with 15 MeV Protons in n-FZ-Si:P Crystals von Krause-Rehberg, Reinhard, Emtsev, Valentin V., Kozlovski, Vitalii V., Kessler, C, Oganesyan, Gagik A., Arutyunov, Nikolai Yu, Elsayed, Mohamed

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Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals von Krause-Rehberg, Reinhard, Kozlovski, Vitalii V., Emtsev, Valentin V., Oganesyan, Gagik A., Arutyunov, Nikolai Yu, Elsayed, Mohamed

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The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures von Oganesyan, Gagik A., Londos, Charalamos A., Misiuk, Andrzej, Andrianakis, A., Emtsev, Valentin V., Ohyama, H.

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Electron Mobility in Moderately Doped Si1-xGex von Abrosimov, Nikolay V., Oganesyan, Gagik A., Emtsev, Valentin V., Andreev, Boris A.

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Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals von Krause-Rehberg, Reinhard, Kozlovski, Vitalii V., Oganesyan, Gagik A., Emtsev, Valentin V., Arutyunov, Nikolai Yu, Elsayed, Mohamed

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Formation rate of vacancy–oxygen complexes in heat-treated Czochralski grown silicon under gamma-irradiation von Emtsev, V. V., Emtsev, V. V., Oganesyan, G. A.

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Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures von Lebedev, Alexander A., Abramov, Pavel L., Lebedev, Sergey P., Nelson, Dmitrii K., Oganesyan, Gagik A., Razbirin, Boris S., Bogdanova, Elena V., Davydov, Sergey Y., Tregubova, Alla S.

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P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates von Lebedev, Alexander A., Abramov, Pavel L., Lebedev, Sergey P., Nel'son, D.K., Yakimova, Rositza, Oganesyan, Gagik A., Bogdanova, Elena V., Tregubova, Alla S.

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Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films von Lebedev, Alexander A., Kuznetsov, Alexey N., Agrinskaya, Nina V., Abramov, Pavel L., Lebedev, Sergey P., Skvortsova, Maria O., Oganesyan, Gagik A., Kozub, Ven I., Chernyaev, A.V., Shamshur, Dmitrii

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Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures von Lebedev, Alexander A., Kuznetsov, Alexey N., Agrinskaya, Nina V., Abramov, Pavel L., Lebedev, Sergey P., Sorokin, L.M., Oganesyan, Gagik A., Kozub, Ven I., Chernyaev, A.V., Shamshur, Dmitrii

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"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress von Emtsev, Valentin V., Potsidi, M.S., Oganesyan, Gagik A., Misiuk, Andrzej, Londos, Charalamos A., Andreev, Boris A., Kryzhkov, D.I.

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Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon von Oganesyan, Gagik A., Misiuk, Andrzej, Londos, Charalamos A., Emtsev, Valentin V., Poloskin, D.S., Andreev, Boris A.

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