The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge von Zhou, Shengqiang, Bürger, Danilo, Skorupa, Wolfgang, Oesterlin, Peter, Helm, Manfred, Schmidt, Heidemarie

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Increasing Photovoltaic Efficiency on the Production Floor von Oesterlin, Peter, Büchel, Andreas

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Increasing Photovoltaic Efficiency on the Production Floor: The Industrial Realization of Laser Doping for Selective Emitters von Oesterlin, Peter, Büchel, Andreas

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Increasing the Photovoltaic Efficiency: Laser Doping of Crystalline Solar Cells von Oesterlin, Peter, Purath, Andreas

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Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology von Borland, John O, Sugitani, Michiro, Oesterlin, Peter, Johnson, Walt, Buyuklimanli, Temel, Hengstebeck, Robert, Kennon, Ethan, Jones, Kevin Scott, Joshi, Abhijeet

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Thick Single Grain Silicon Formation with Microsecond Green Laser Crystallization von Arslan, Aslihan, Kahlert, Hans-Jürgen, Oesterlin, Peter, Mofrad, Daniel T., Ishihara, Ryoichi, Beenakker, Kees

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Defects formed by pulsed laser annealing: electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy von Schindele, David, Pichler, Peter, Lorenz, Jürgen, Oesterlin, Peter, Ryssel, Heiner

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Increasing the Photovoltaic Efficiency von Oesterlin, Peter, Purath, Andreas

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Green Laser Crystallization of GeSi Thin Films and Dopant Activation von Rangarajan, Balaji, Brunets, Ihor, Oesterlin, Peter, Kovalgin, Alexey Y., Schmitz, Jurriaan

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Laterally Confined Large-Grained Poly-GeSi Films: Crystallization and Dopant Activation Using Green Laser von Rangarajan, Balaji, Kovalgin, Alexey Y., Oesterlin, Peter, de Kloe, René, Brunets, Ihor, Schmitz, Jurriaan

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Beam shaping - the key to high throughput selective emitter laser processing with a single laser system von Jager, U, Oesterlin, P, Kimmerle, A, Preu, R

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Selective and homo emitter junction formation using precise dopant concentration control by ion implantation and microwave, laser or furnace annealing techniques von Borland, John, Moroz, V., Huang, Joanne, Chen, John, Yao-Jen Lee, Oesterlin, P., Venema, P., Geerman, H., Zhao, Peter, Wang, Larry

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Green Laser Crystallization of a-Si Films Using Preformed a-Si Lines von Brunets, Ihor, Holleman, Jisk, Kovalgin, Alexey Y., Aarnink, Tom, Boogaard, Arjen, Oesterlin, Peter, Schmitz, Jurriaan

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Hysteresis in the magnetotransport of manganese-doped germanium: Evidence for carrier-mediated ferromagnetism von Zhou, Shengqiang, Bürger, Danilo, Mücklich, Arndt, Baumgart, Christine, Skorupa, Wolfgang, Timm, Carsten, Oesterlin, Peter, Helm, Manfred, Schmidt, Heidemarie

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High throughput laser doping for selective emitter crystalline Si solar cells von Oesterlin, P, Jager, U

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Liquid Phase Epitaxy (LPE) Formation of Localized High Quality and Mobility Ge & SiGe by High Dose Ge-Implantation with Laser Melt Annealing for 10nm and 7nm Node CMOS Technology von Borland, John O, Sugitani, Michiro, Oesterlin, Peter, Johnson, Walt, Buyuklimanli, Temel, Hengstebeck, Robert, Kennon, Ethan, Jones, Kevin Scott, Joshi, Abhijeet

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Thick Single Grain Silicon Formation with Microsecond Green Laser Crystallization von Arslan, Aslihan, Kahlert, Hans-Jürgen, Oesterlin, Peter, Mofrad, Daniel T., Ishihara, Ryoichi, Beenakker, C.I.M.

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High mobility Ge-channel formation by localized/selective liquid phase epitaxy (LPE) using Ge+B plasma ion implantation and laser melt annealing von Borland, John, Qin, Shu, Oesterlin, Peter, Huet, Karim, Johnson, Walt, Klein, Lauren, Goodman, Gary, Wan, Alan, Novak, Steven, Murray, Thomas, Matyi, Richard, Joshi, Abhijeet, Prussin, Si

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Method and apparatus to form selective emitter areas on a solar cell von OESTERLIN, PETER, GNAUSCH, TOBIAS

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METHOD AND DEVICE FOR DOPING SELECTED REGIONS OF A SOLAR CELL von OESTERLIN, PETER, GNAUSCH, TOBIAS

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