Quantitative estimation of density of Bi-induced localized states in GaAs1−xBix grown by molecular beam epitaxy von Yoshimoto, Masahiro, Itoh, Mizuki, Tominaga, Yoriko, Oe, Kunishige

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Structural investigation of GaAs1−xBix/GaAs multiquantum wells von Tominaga, Yoriko, Kinoshita, Yusuke, Oe, Kunishige, Yoshimoto, Masahiro

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Molecular-beam epitaxy and characteristics of GaNyAs1−x−yBix von Huang, Wei, Oe, Kunishige, Feng, Gan, Yoshimoto, Masahiro

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Simultaneous RGB lasing from a single-chip polymer device von YAMASHITA, Kenichi, TAKEUCHI, Nobutaka, OE, Kunishige, YANAGI, Hisao

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High Hole Mobility in GaAs1-xBix Alloys von Kado, Kosuke, Fuyuki, Takuma, Yamada, Kazuya, Oe, Kunishige, Yoshimoto, Masahiro

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Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy von Fuyuki, Takuma, Kashiyama, Shota, Tominaga, Yoriko, Oe, Kunishige, Yoshimoto, Masahiro

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Corrigendum: “Influence of thermal annealing treatment on the luminescence properties of dilute GaNAs–bismide alloy” [Jpn. J. Appl. Phys. 46, L764 (2007)] von Feng, Gan, Oe, Kunishige, Yoshimoto, Masahiro

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Bismuth Containing III–V Quaternary Alloy InGaAsBi Grown by MBE von Feng, Gan, Oe, Kunishige, Yoshimoto, Masahiro

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Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy von Feng, Gan, Oe, Kunishige, Yoshimoto, Masahiro

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Temperature-insensitive photoluminescence emission wavelength in GaAs1-xBix/GaAs multiquantum wells von Tominaga, Yoriko, Oe, Kunishige, Yoshimoto, Masahiro

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Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission von Yoshimoto, Masahiro, Huang, Wei, Feng, Gan, Tanaka, Yoshinori, Oe, Kunishige

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Solid state organic laser emission at 970nm from dye-doped fluorinated-polyimide planar waveguides von Yuyama, Shun, Nakajima, Takahiro, Yamashita, Kenichi, Oe, Kunishige

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1.3 µm Solid-State Plastic Laser in Dye-Doped Fluorinated-Polyimide Waveguide von Morishita, Takashi, Yamashita, Kenichi, Yanagi, Hisao, Oe, Kunishige

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Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBix Laser by Photo-Pumping von Tominaga, Yoriko, Oe, Kunishige, Yoshimoto, Masahiro

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Optical properties of dye-doped polymer films incorporating photonic nanostructures von Egami, Kazutaka, Nakayama, Tomoya, Kosaka, Yuuka, Tomita, Satoshi, Ishizumi, Atsushi, Yanagi, Hisao, Yamashita, Ken-ichi, Oe, Kunishige

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Optical Amplification in Organic Dye-doped Polymeric Channel Waveguide under CW Optical Pumping von Yamashita, Kenichi, Hase, Kengo, Yanagi, Hisao, Oe, Kunishige

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Growth of GaAs1-xBix/GaAs multi-quantum wells by molecular beam epitaxy von Tominaga, Yoriko, Kinoshita, Yusuke, Feng, Gan, Oe, Kunishige, Yoshimoto, Masahiro

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Simultaneous RGB lasing from a single-chip polymer device von Yamashita, Kenichi, Takeuchi, Nobutaka, Oe, Kunishige, Yanagi, Hisao

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Structural and Energy-Gap Characterization of Metalorganic-Vapor-Phase-Epitaxy-Grown InAsBi von Okamoto, Hiroshi, Oe, Kunishige

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New III–V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy von Feng, Gan, Yoshimoto, Masahiro, Oe, Kunishige, Chayahara, Akiyoshi, Horino, Yuji

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