Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach von El Hageali, Sami A., Guthrey, Harvey, Johnston, Steven, Soto, Jake, Odekirk, Bruce, Gorman, Brian P., Al-Jassim, Mowafak

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Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability von El Hageali, Sami A., Guthrey, Harvey, Johnston, Steven, Norman, Andrew, Soto, Jake, Odekirk, Bruce, Stahlbush, Robert E., Mahadik, Nadeemullah A., Gorman, Brian P., Al-Jassim, Mowafak

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Safety and Efficacy of the BNT162b2 mRNA Covid-19 Vaccine von Polack, Fernando P, Thomas, Stephen J, Kitchin, Nicholas, Absalon, Judith, Gurtman, Alejandra, Lockhart, Stephen, Perez, John L, Pérez Marc, Gonzalo, Moreira, Edson D, Zerbini, Cristiano, Bailey, Ruth, Swanson, Kena A, Roychoudhury, Satrajit, Koury, Kenneth, Li, Ping, Kalina, Warren V, Cooper, David, Frenck, Robert W, Hammitt, Laura L, Türeci, Özlem, Nell, Haylene, Schaefer, Axel, Ünal, Serhat, Tresnan, Dina B, Mather, Susan, Dormitzer, Philip R, Şahin, Uğur, Jansen, Kathrin U, Gruber, William C

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Safety and Efficacy of a Third Dose of BNT162b2 Covid-19 Vaccine von Moreira, Edson D., Kitchin, Nicholas, Xu, Xia, Dychter, Samuel S., Lockhart, Stephen, Gurtman, Alejandra, Perez, John L., Zerbini, Cristiano, Dever, Michael E., Jennings, Timothy W., Brandon, Donald M., Cannon, Kevin D., Koren, Michael J., Denham, Douglas S., Berhe, Mezgebe, Fitz-Patrick, David, Hammitt, Laura L., Klein, Nicola P., Nell, Haylene, Keep, Georgina, Wang, Xingbin, Koury, Kenneth, Swanson, Kena A., Cooper, David, Lu, Claire, Türeci, Özlem, Lagkadinou, Eleni, Tresnan, Dina B., Dormitzer, Philip R., Şahin, Uğur, Gruber, William C., Jansen, Kathrin U.

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Cardiovascular Safety of Testosterone-Replacement Therapy von Lincoff, A. Michael, Bhasin, Shalender, Flevaris, Panagiotis, Mitchell, Lisa M., Basaria, Shehzad, Boden, William E., Cunningham, Glenn R., Granger, Christopher B., Khera, Mohit, Thompson, Ian M., Wang, Qiuqing, Wolski, Kathy, Davey, Deborah, Kalahasti, Vidyasagar, Khan, Nader, Miller, Michael G., Snabes, Michael C., Chan, Anna, Dubcenco, Elena, Li, Xue, Yi, Tingting, Huang, Bidan, Pencina, Karol M., Travison, Thomas G., Nissen, Steven E.

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Nondestructive microstructural investigation of defects in 4H-SiC epilayers using a multiscale luminescence analysis approach von El Hageali, Sami A., Guthrey, Harvey, Johnston, Steven, Soto, Jake, Odekirk, Bruce, Gorman, Brian P., Al-Jassim, Mowafak

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4H-SiC 1200 V Junction Barrier Schottky Diodes with High Avalanche Ruggedness von Starr, Linda, Gendron-Hansen, Amaury, Sdrulla, Dumitru, Kashyap, Avinash S., Odekirk, Bruce

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Commercialization of Highly Rugged 4H-SiC 3300 V Schottky Diodes and Power MOSFETs von Kashyap, Avinash S., Sdrulla, Dumitru, Hong, Changsoo, Odekirk, Bruce, May, John, Gendron-Hansen, Amaury, Jiang, Yi Fan

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Stacking Faults Originating from Star-Defects in 4H-SiC von Stahlbush, Robert, Soto, Jake, Gorman, Brian, Odekirk, Bruce, El Hageali, Sami, Al-Jassim, Mowafak, Johnston, Steven, Guthrey, Harvey, Mahadik, Nadeem

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Aquifer Drawdown and Recovery in the Northeast Groundwater Management Area, Wisconsin, USA: A Century of Groundwater Use von Luczaj, John, Maas, Julie, Hart, David, Odekirk, Jonathan

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Rangeland Ecology & Management Highlights von Bibeau, Luc, Cerda, Marie, Delgadillo, Eric, Gilbert, Greg, Harrison, Georgia, Harvey, Haley, Hatch, Scott, Hayes, Kenneth, Hooper-Wolff, Thomas, Lauritzen, Dan, Osborn, Brittney, Odekirk, Jacob, Sharp-Miner, Jessica, Palmer, Zachary, Stauffer, Nelson, Teitelbaum, Alex, Tilley, Derek, Vaccaro, Angelarose, Winkle, Brian Van, Wickersham, Thea

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Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy von Fang, Z.-Q., Claflin, B., Look, D. C., Chai, F., Odekirk, B.

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Pulse speed on a plucked wire von Odekirk, Tristan, Slaton, William V.

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Cawn dodgahs von Greenwood, Alice Davis Odekirk, 1851

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Silicon carbide semiconductor device with a contact region having edges recessed from edges of the well region von Odekirk, Bruce, Gendron-Hansen, Amaury

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Tantalum carbide ohmic contacts to n -type silicon carbide von Jang, T., Porter, L. M., Rutsch, G. W. M., Odekirk, B.

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Thermal stability and contact degradation mechanisms of TaC ohmic contacts with W/WC overlayers to n -type 6H SiC von Jang, T., Odekirk, B., Madsen, L. D., Porter, L. M.

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Silicon Carbide Semiconductor Device with a Contact region having Edges Recessed from Edges of the Well Region von Odekirk, Bruce, Gendron-Hansen, Amaury

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A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers von Chai, F. K., Odekirk, B., Maxwell, E., Caballero, M., Fields, T., Mallinger, M., Sdrulla, D.

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Self-aligned implants for silicon carbide (SiC) technologies and fabrication method von Odekirk, Bruce, Gendron-Hansen, Amaury

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