A Multi-Bit Neuromorphic Weight Cell Using Ferroelectric FETs, suitable for SoC Integration von Obradovic, Borna, Rakshit, Titash, Hatcher, Ryan, Kittl, Jorge, Sengupta, Rwik, Hong, Joon Goo, Rodder, Mark S.

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Modeling Transient Negative Capacitance in Steep-Slope FeFETs von Obradovic, Borna, Rakshit, Titash, Hatcher, Ryan, Kittl, Jorge A., Rodder, Mark S.

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Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers von Wang, E.X., Matagne, P., Shifren, L., Obradovic, B., Kotlyar, R., Cea, S., Stettler, M., Giles, M.D.

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A logic nanotechnology featuring strained-silicon von Thompson, S.E., Armstrong, M., Auth, C., Cea, S., Chau, R., Glass, G., Hoffman, T., Klaus, J., Zhiyong Ma, Mcintyre, B., Murthy, A., Obradovic, B., Shifren, L., Sivakumar, S., Tyagi, S., Ghani, T., Mistry, K., Bohr, M., El-Mansy, Y.

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Band-to-Band Tunneling in Ge-Rich SiGe Devices von Obradovic, Borna, Bowen, Robert C., Rodder, Mark S.

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A 90-nm logic technology featuring strained-silicon von Thompson, S.E., Armstrong, M., Auth, C., Alavi, M., Buehler, M., Chau, R., Cea, S., Ghani, T., Glass, G., Hoffman, T., Jan, C.-H., Kenyon, C., Klaus, J., Kuhn, K., Zhiyong Ma, Mcintyre, B., Mistry, K., Murthy, A., Obradovic, B., Nagisetty, R., Phi Nguyen, Sivakumar, S., Shaheed, R., Shifren, L., Tufts, B., Tyagi, S., Bohr, M., El-Mansy, Y.

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SPICE macromodel of silicon-on-insulator-field-effect-transistor-based biological sensors von Fernandes, Poornika G., Stiegler, Harvey J., Zhao, Mingyue, Cantley, Kurtis D., Obradovic, Borna, Chapman, Richard A., Wen, Huang-Chun, Mahmud, Gazi, Vogel, Eric M.

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HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT von Rodder, Mark S, Obradovic, Borna J, Rakshit, Titash

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High-density neuromorphic computing element von Rodder, Mark S, Obradovic, Borna J, Rakshit, Titash

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GATE SPACERS WITH ADJACENT UNIFORM EPITAXIAL MATERIAL von OBRADOVIC, Borna, MEHANDRU, Rishabh, KAVALIEROS, Jack T, CEA, Stephen M

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HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT von Rodder, Mark S, Obradovic, Borna J, Rakshit, Titash

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High-density neuromorphic computing element von Rodder, Mark S, Obradovic, Borna J, Rakshit, Titash

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Field effect transistor with decoupled channel and methods of manufacturing the same von Rodder, Mark S, Obradovic, Borna J

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Zero leakage, high noise margin coupled giant spin hall based retention latch von Rakshit Titash, Obradovic Borna

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Method of forming multi-threshold voltage devices and devices so formed von Wang, Wei-E, Rodder, Mark S, Obradovic, Borna J

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Scaling reliability and modeling of ferroelectric capacitors von Acosta, Antonio G, Rodriguez, John, Obradovic, Borna, Summerfelt, Scott, San, Tamer, Green, Keith, Moise, Ted, Krishnan, Srikanth

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ZERO LEAKAGE, HIGH NOISE MARGIN COUPLED GIANT SPIN HALL BASED RETENTION LATCH von Rakshit Titash, Obradovic Borna

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FIELD EFFECT TRANSISTOR WITH DECOUPLED CHANNEL AND METHODS OF MANUFACTURING THE SAME von Rodder, Mark S, Obradovic, Borna J

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(Invited) Strain Modeling in Advanced MOSFET Devices von Cea, Stephen, Hasan, Sayed, Kennel, Hal, Keys, Patrick, Lilak, Aaron, Obradovic, Borna, Mehandru, Rishabh, Weber, Cory, Stettler, Mark

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Field effect transistor with decoupled channel and methods of manufacturing the same von Rodder, Mark S, Obradovic, Borna J

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