Comparative study of (0001) and InGaN based light emitting diodes von Pristovsek, Markus, Humphreys, Colin J., Bauer, Sebastian, Knab, Manuel, Thonke, Klaus, Kozlowski, Grzegorz, O Mahony, Donagh, Maaskant, Pleun, Corbett, Brian

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High Bandwidth Freestanding Semipolar (11-22) InGaN/GaN Light-Emitting Diodes von Zhiheng Quan, Dinh, Duc V., Presa, Silvino, Roycroft, Brendan, Foley, Ann, Akhter, Mahbub, O'Mahony, Donagh, Maaskant, Pleun P., Caliebe, Marian, Scholz, Ferdinand, Parbrook, Peter J., Corbett, Brian

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Exciton–polariton behaviour in bulk and polycrystalline ZnO von McGlynn, Enda, Fryar, James, Henry, Martin O., Mosnier, Jean-Paul, Lunney, James G., Mahony, Donagh O’, dePosada, Eduardo

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