Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length von Fischetti, M.V., O'Regan, T.P., Sudarshan Narayanan, Sachs, C., Seonghoon Jin, Jiseok Kim, Yan Zhang

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Electrically active interface defects in the In0.53Ga0.47As MOS system von Djara, V., O’Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O’Connor, É., Povey, I.M., O’Connell, D., Pemble, M.E., Hurley, P.K.

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The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system von ZHANG, P. F, NAGLE, R. E, PEMBLE, M. E, HURLEY, P. K, WHATMORE, R. W, DEEPAK, N, POVEY, I. M, GOMENIUK, Y. Y, O'CONNOR, E, PETKOV, N, SCHMIDT, M, O'REGAN, T. P, CHERKAOUI, K

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Analysis of temperature dependent hysteresis in MoS2 field effect transistors for high frequency applications von Shah, P.B., Amani, M., Chin, M.L., O’Regan, T.P., Crowne, F.J., Dubey, M.

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A spectroscopic method for the evaluation of surface passivation treatments on metal–oxide–semiconductor structures von Walsh, Lee A., Hurley, Paul K., Lin, Jun, Cockayne, Eric, O’Regan, T.P., Woicik, Joseph C., Hughes, Greg

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Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs von Negara, M.A., Djara, V., O’Regan, T.P., Cherkaoui, K., Burke, M., Gomeniuk, Y.Y., Schmidt, M., O’Connor, E., Povey, I.M., Quinn, A.J., Hurley, P.K.

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The structural and electrical properties of the SrTa 2O 6/In 0.53Ga 0.47As/InP system von Zhang, P.F., Nagle, R.E., Deepak, N., Povey, I.M., Gomeniuk, Y.Y., O’Connor, E., Petkov, N., Schmidt, M., O’Regan, T.P., Cherkaoui, K., Pemble, M.E., Hurley, P.K., Whatmore, R.W.

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Accounting for biological and anthropogenic factors in national land-base carbon budgets von Turner, D.P. (Oregan State Univ., Corvallis (USA). Forest Science Dept.), Winjum, J.K, Kolchugina, T.P, Cairns, M.A

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