Influence of grain size and surface condition on minority-carrier lifetime in undoped n -BaSi2 on Si(111) von Takabe, Ryota, Hara, Kosuke O., Baba, Masakazu, Du, Weijie, Shimada, Naoya, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi

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Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing von Hara, Kosuke O, Usami, Noritaka, Nakamura, Kotaro, Takabe, Ryouta, Baba, Masakazu, Toko, Kaoru, Suemasu, Takashi

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Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications von Du, Weijie, Baba, Masakazu, Toko, Kaoru, Hara, Kosuke O., Watanabe, Kentaro, Sekiguchi, Takashi, Usami, Noritaka, Suemasu, Takashi

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Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique von Baba, Masakazu, Toh, Katsuaki, Toko, Kaoru, Saito, Noriyuki, Yoshizawa, Noriko, Jiptner, Karolin, Sekiguchi, Takashi, Hara, Kosuke O., Usami, Noritaka, Suemasu, Takashi

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Dependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe/Si(110) on the channel direction and the strained Si thickness von Arimoto, Keisuke, Fujisawa, Taisuke, Namiuchi, Daichi, Onogawa, Atsushi, Sano, Yuichi, Izumi, Daisuke, Yamanaka, Junji, Hara, Kosuke O., Sawano, Kentarou, Nakagawa, Kiyokazu

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Discovering Low-Electron-Affinity Semiconductors for Junction Partners of Photovoltaic BaSi2 by Database Screening and First Principles Calculations von Hara, Kosuke O

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Structural and electrical characterizations of crack-free BaSi2 thin films fabricated by thermal evaporation von Hara, Kosuke O., Yamanaka, Junji, Arimoto, Keisuke, Nakagawa, Kiyokazu, Suemasu, Takashi, Usami, Noritaka

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Evaluation of Lattice-Spacing of SiGe/Si by NBD using Two-condenser-lens TEM von Yamanaka, Junji, Oguni, Takuya, Sano, Yuichi, Ohshima, Yusuke, Onogawa, Atsushi, Hara, Kosuke O., Arimoto, Keisuke

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Effects of deposition rate on the structure and electron density of evaporated BaSi2 films von Hara, Kosuke O., Trinh, Cham Thi, Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu, Kurokawa, Yasuyoshi, Suemasu, Takashi, Usami, Noritaka

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N-type doping of BaSi2 epitaxial films by arsenic ion implantation through a dose-dependent carrier generation mechanism von HARA, Kosuke O, USAMI, Noritaka, BABA, Masakazu, TOKO, Kaoru, SUEMASU, Takashi

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Tellurium nanosheets with structural anisotropy formed from defective MoTe2 multilayers von Muranaka, Shuto, Nogamida, Satoshi, Hara, Kosuke O., Sawano, Kentarou, Hoshi, Yusuke

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Fabrication of SnS/BaSi2 heterojunction by thermal evaporation for solar cell applications von Hara, Kosuke O., Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu

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Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates von Toh, Katsuaki, Hara, Kosuke O., Usami, Noritaka, Saito, Noriyuki, Yoshizawa, Noriko, Toko, Kaoru, Suemasu, Takashi

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N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing von Hara, Kosuke O., Hoshi, Yusuke, Usami, Noritaka, Shiraki, Yasuhiro, Nakamura, Kotaro, Toko, Kaoru, Suemasu, Takashi

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Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE von Arimoto, Keisuke, Yagi, Sosuke, Yamanaka, Junji, Hara, Kosuke O., Sawano, Kentarou, Usami, Noritaka, Nakagawa, Kiyokazu

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Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness von Okada, Atsushi, Toko, Kaoru, Hara, Kosuke O., Usami, Noritaka, Suemasu, Takashi

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Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy von Arimoto, Keisuke, Nakazawa, Hiroki, Mitsui, Shohei, Utsuyama, Naoto, Yamanaka, Junji, Hara, Kosuke O, Usami, Noritaka, Nakagawa, Kiyokazu

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Stability of strain in Si layers formed on SiGe/Si(110) heterostructures von Arimoto, Keisuke, Onogawa, Atsushi, Saito, Shingo, Yamada, Takane, Sato, Kei, Utsuyama, Naoto, Sano, Yuichi, Izumi, Daisuke, Yamanaka, Junji, Hara, Kosuke O, Sawano, Kentarou, Nakagawa, Kiyokazu

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Control of electrical properties of BaSi2 thin films by alkali-metal doping using alkali-metal fluorides von Hara, Kosuke O., Du, Weijie, Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu, Toko, Kaoru, Suemasu, Takashi, Usami, Noritaka

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Evaluation of Crystal Lattice Rotation around a Stress-Induced Twin in a Step-Graded SiGe / Si (110) Using STEM Moiré Observation and its Image Analysis von Yamanaka, Junji, Yamamoto, Chiaya, Shirakura, Mai, Hara, Kosuke O., Arimoto, Keisuke, Nakagawa, Kiyokazu, Ishizuka, Akimitsu, Ishizuka, Kazuo

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