Discovering Low-Electron-Affinity Semiconductors for Junction Partners of Photovoltaic BaSi2 by Database Screening and First Principles Calculations von Hara, Kosuke O

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Crystalline Morphology of SiGe Films Grown on Si(110) Substrates von Arimoto, Keisuke, Sakata, Chihiro, Hara, Kosuke O., Yamanaka, Junji

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Constructing the composition ratio prediction model using machine learning for BaSi2 thin films deposited by thermal evaporation von Ueda, Ryuto, Arimoto, Keisuke, Yamanaka, Junji, Hara, Kosuke O.

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Thermodynamic analyses of thermal evaporation of BaSi2 von Hara, Kosuke O, Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu

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Diffusion process in BaSi2 film formation by thermal evaporation and its relation to electrical properties von Hara, Kosuke O., Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu

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Tellurium nanosheets with structural anisotropy formed from defective MoTe2 multilayers von Muranaka, Shuto, Nogamida, Satoshi, Hara, Kosuke O., Sawano, Kentarou, Hoshi, Yusuke

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Theory of open-circuit voltage and the driving force of charge separation in pn-junction solar cells von Hara, Kosuke O., Usami, Noritaka

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Influence of grain size and surface condition on minority-carrier lifetime in undoped n -BaSi2 on Si(111) von Takabe, Ryota, Hara, Kosuke O., Baba, Masakazu, Du, Weijie, Shimada, Naoya, Toko, Kaoru, Usami, Noritaka, Suemasu, Takashi

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Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing von Hara, Kosuke O, Usami, Noritaka, Nakamura, Kotaro, Takabe, Ryouta, Baba, Masakazu, Toko, Kaoru, Suemasu, Takashi

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Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications von Du, Weijie, Baba, Masakazu, Toko, Kaoru, Hara, Kosuke O., Watanabe, Kentaro, Sekiguchi, Takashi, Usami, Noritaka, Suemasu, Takashi

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Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique von Baba, Masakazu, Toh, Katsuaki, Toko, Kaoru, Saito, Noriyuki, Yoshizawa, Noriko, Jiptner, Karolin, Sekiguchi, Takashi, Hara, Kosuke O., Usami, Noritaka, Suemasu, Takashi

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Dependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe/Si(110) on the channel direction and the strained Si thickness von Arimoto, Keisuke, Fujisawa, Taisuke, Namiuchi, Daichi, Onogawa, Atsushi, Sano, Yuichi, Izumi, Daisuke, Yamanaka, Junji, Hara, Kosuke O., Sawano, Kentarou, Nakagawa, Kiyokazu

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Structural and electrical characterizations of crack-free BaSi2 thin films fabricated by thermal evaporation von Hara, Kosuke O., Yamanaka, Junji, Arimoto, Keisuke, Nakagawa, Kiyokazu, Suemasu, Takashi, Usami, Noritaka

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Evaluation of Lattice-Spacing of SiGe/Si by NBD using Two-condenser-lens TEM von Yamanaka, Junji, Oguni, Takuya, Sano, Yuichi, Ohshima, Yusuke, Onogawa, Atsushi, Hara, Kosuke O., Arimoto, Keisuke

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Effects of deposition rate on the structure and electron density of evaporated BaSi2 films von Hara, Kosuke O., Trinh, Cham Thi, Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu, Kurokawa, Yasuyoshi, Suemasu, Takashi, Usami, Noritaka

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N-type doping of BaSi2 epitaxial films by arsenic ion implantation through a dose-dependent carrier generation mechanism von HARA, Kosuke O, USAMI, Noritaka, BABA, Masakazu, TOKO, Kaoru, SUEMASU, Takashi

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Fabrication of SnS/BaSi2 heterojunction by thermal evaporation for solar cell applications von Hara, Kosuke O., Arimoto, Keisuke, Yamanaka, Junji, Nakagawa, Kiyokazu

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Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates von Toh, Katsuaki, Hara, Kosuke O., Usami, Noritaka, Saito, Noriyuki, Yoshizawa, Noriko, Toko, Kaoru, Suemasu, Takashi

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N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing von Hara, Kosuke O., Hoshi, Yusuke, Usami, Noritaka, Shiraki, Yasuhiro, Nakamura, Kotaro, Toko, Kaoru, Suemasu, Takashi

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Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness von Okada, Atsushi, Toko, Kaoru, Hara, Kosuke O., Usami, Noritaka, Suemasu, Takashi

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